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1.METHOD FOR MANUFACTURING SOLAR CELLS AND SOLAR CELLS MANUFACTURED THEREBY 审中-公开
Title translation: 制造太阳能电池的方法和制造的太阳能电池公开(公告)号:WO2012074247A2
公开(公告)日:2012-06-07
申请号:PCT/KR2011009060
申请日:2011-11-25
Applicant: KOREA ELECTRONICS TELECOMM , PARK RAE-MAN
Inventor: PARK RAE-MAN
IPC: H01L31/042 , H01L31/18
CPC classification number: H01L31/1892 , H01L31/0322 , H01L31/03923 , H01L31/03928 , H01L31/1896 , Y02E10/541 , Y02P70/521
Abstract: The present invention provides a method for manufacturing solar cells and the solar cells manufactured thereby. The method is capable of manufacturing flexible solar cells simply by attaching a flexible substrate on a second electrode after forming multiple layers such as a CIGS absorption layer on a sacrificial substrate under a high temperature process. Additionally, a separation film is removed by a laser or by selective wet etching after the attachment of the flexible substrate. Therefore, flexible CIGS solar cells having high efficiency can be achieved.
Abstract translation: 本发明提供一种制造太阳能电池的方法及其制造的太阳能电池。 该方法能够通过在高温工艺上在牺牲基板上形成诸如CIGS吸收层的多层之后,将柔性基板附着在第二电极上而制造柔性太阳能电池。 此外,在柔性基板的附着之后,通过激光或通过选择性湿法蚀刻去除分离膜。 因此,可以实现具有高效率的柔性CIGS太阳能电池。
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公开(公告)号:DE102011003941A1
公开(公告)日:2012-04-19
申请号:DE102011003941
申请日:2011-02-10
Applicant: KOREA ELECTRONICS TELECOMM
Inventor: PARK RAE-MAN
IPC: H01L31/18 , H01L21/363 , H01L31/0256
Abstract: Es wird ein Verfahren zur Herstellung einer Verbindungshalbleiter-Solarzelle geschaffen. Das Verfahren weist auf: Vorbereiten eines Substrats, auf dem eine hintere Elektrode angeordnet ist, und Sputtern eines Metall-Targets, um unter einer Atmosphäre aus Indium-(In)-Abscheidungsgas einen Kupfer-Indium-Gallium-Selen-(CIGS)-Dünnfilm auf der hinteren Elektrode auszubilden.
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3.GAS SENSOR HAVING ZINC OXIDE NANO-STRUCTURES AND METHOD OF FABRICATING THE SAME 有权
Title translation: WITH其制造氧化锌纳米结构和方法气体传感器公开(公告)号:EP2044424A4
公开(公告)日:2011-12-14
申请号:EP07745782
申请日:2007-04-03
Applicant: KOREA ELECTRONICS TELECOMM
Inventor: PARK RAE-MAN , KIM SANG-HYEOB , PARK JONGHYURK , MAENG SUNGLYUL
IPC: G01N27/12
CPC classification number: G01N27/12 , Y10T29/49002
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4.METHOD OF MANUFACTURING SILICON NANOTUBES USING DOUGHNUT-SHAPED CATALYTIC METAL LAYER 审中-公开
Title translation: 用于生产硅纳米管的使用,一种环形催化金属层公开(公告)号:EP2027059A4
公开(公告)日:2012-09-12
申请号:EP06824014
申请日:2006-12-08
Applicant: KOREA ELECTRONICS TELECOMM
Inventor: PARK RAE-MAN , KIM SANG-HYEOB , MAENG SUNGLYUL , PARK JONGHYURK
IPC: H01L21/02 , C01B33/02 , C01B33/027 , C30B25/00 , C30B29/06 , C30B29/60 , H01L21/20 , H01L29/06 , H01L29/16
CPC classification number: H01L29/0665 , B82Y10/00 , B82Y30/00 , C01B33/02 , C01B33/027 , C30B25/00 , C30B29/06 , C30B29/602 , H01L21/02532 , H01L21/02606 , H01L21/0262 , H01L21/02639 , H01L21/02642 , H01L21/02645 , H01L21/02653 , H01L29/0673 , H01L29/0676 , H01L29/16
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5.METHOD OF MANUFACTURING SILICON NANOWIRES USING SILICON NANODOT THIN FILM 审中-公开
Title translation: 用于生产硅纳米线利用硅纳米点薄膜公开(公告)号:EP2036117A4
公开(公告)日:2012-09-19
申请号:EP06824015
申请日:2006-12-08
Applicant: KOREA ELECTRONICS TELECOMM
Inventor: PARK RAE-MAN , KIM SANG-HYEOB , PARK JONGHYURK , MAENG SUNGLYUL
CPC classification number: C30B25/00 , C30B29/06 , C30B29/60 , H01L21/0237 , H01L21/02532 , H01L21/02603 , H01L21/0262 , H01L21/02631 , H01L21/02639 , H01L21/02645 , Y10S977/762 , Y10S977/778 , Y10S977/891 , Y10S977/932
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6.SEMICONDUCTOR LIGHT EMITTING DIODE THAT USES SILICON NANO DOT AND METHOD OF MANUFACTURING THE SAME 有权
Title translation: 与硅纳米点半导体发光二极管及其制造方法公开(公告)号:EP1992019A4
公开(公告)日:2011-04-13
申请号:EP06769057
申请日:2006-06-27
Applicant: KOREA ELECTRONICS TELECOMM
Inventor: HUH CHUL , PARK RAE-MAN , SHIN JAE-HEON , KIM KYUNG-HYUN , KIM TAE-YOUB , CHO KWAN-SIK , SUNG GUN-YONG
CPC classification number: H01L33/34 , B82Y20/00 , H01L33/18 , Y10S438/962 , Y10S977/773 , Y10S977/774
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