公开(公告)号：AU4741497A

公开(公告)日：1998-04-24

申请号：AU4741497

申请日：1997-09-30

Applicant: LAM RES CORP

Inventor： KENNEDY WILLIAM S ,  WICKER THOMAS E ,  MARASCHIN ROBERT A ,  COOK JOEL M ,  SCHOEPP ALAN M

IPC: H05H1/46 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/00

Abstract: In a plasma processing system for processing substrates such as semiconductor wafers, deposition of polymer in an area between a focus ring and an electrostatic chuck in a plasma processing chamber is achieved by providing a clearance gas in a gap between the chuck and the focus ring. A series of channels delivers the clearance gas to the annular gap between the outer surface of the substrate support and the inner surface of the focus ring surrounding the substrate support. The clearance gas supplied to the annular gap is preferably a gas such as helium which will not affect the wafer processing operation. In the case of plasma etching, the clearance gas is supplied at a flow rate which is sufficient to block the migration of process gas and volative byproducts thereof into the annular gap without adversely affecting edge etch performance.

公开(公告)号：AU3079597A

公开(公告)日：1998-01-05

申请号：AU3079597

申请日：1997-06-02

Applicant: LAM RES CORP

Inventor： WICKER THOMAS E ,  COOK JOEL M ,  MARASCHIN ROBERT A ,  KENNEDY WILLIAM S ,  BENJAMIN NEIL

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/50 ,  C23C16/505 ,  C23C16/507 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302

Abstract: A plasma processing chamber includes a substrate holder and a dielectric member such as a dielectric window or gas distribution plate having an interior surface facing the substrate holder, the interior surface being maintained below a threshold temperature to minimize process drift during processing of substrates. The chamber can include an antenna which inductively couples RF energy through the dielectric member to energize process gas into a plasma state. The antenna can include a channel through which a temperature controlling fluid, which has been cooled by a closed circuit temperature controller, is passed. The control of the temperature of the interior surface minimizes process drift and degradation of the quality of the processed substrates during sequential batch processing of substrates such as during oxide etching of semiconductor wafers.