公开(公告)号：WO2006104842A3

公开(公告)日：2007-11-08

申请号：PCT/US2006010577

申请日：2006-03-24

Applicant: LAM RES CORP ,  BAILEY ANDREW D III

Inventor： BAILEY ANDREW D III

IPC: B25H1/00

CPC classification number: B25J5/00 ,  B08B1/00 ,  B08B9/00 ,  H01J37/32743 ,  H01J37/32862 ,  H01L21/67751 ,  Y10T29/49723

Abstract: A robot apparatus for executing a set of service procedures on a plasma processing system including a docking port is disclosed. The apparatus includes a platform and a docking probe coupled to the platform, wherein the docking probe is configured to dock with the docking port. The apparatus also includes a robot arm coupled to the platform, and further configured to substantially perform the set of service procedures, and a tool coupled to the robot arm. The apparatus further includes a computer coupled to the platform, wherein the computer is further configured to execute the set of service procedures, and wherein when the docking probe is docked to the docking port, the set of service procedures is performed by the tool.

Abstract translation: 公开了一种用于在包括对接端口的等离子体处理系统上执行一组服务程序的机器人装置。 该装置包括耦合到平台的平台和对接探针，其中对接探针配置成与对接端口对接。 该装置还包括联接到平台的机器人臂，并且还被配置为基本上执行该组服务程序，以及联接到机器人手臂的工具。 所述装置还包括耦合到所述平台的计算机，其中所述计算机还被配置为执行所述一组服务过程，并且其中当所述对接探针对接到所述对接端口时，所述一组服务过程由所述工具执行。

公开(公告)号：WO2007038256A3

公开(公告)日：2007-06-21

申请号：PCT/US2006036959

申请日：2006-09-22

Applicant: LAM RES CORP ,  YOON HYUNGSUK ALEXANDER ,  THIE WILLIAM ,  DORDI YEZDI ,  BAILEY ANDREW D III

Inventor： YOON HYUNGSUK ALEXANDER ,  THIE WILLIAM ,  DORDI YEZDI ,  BAILEY ANDREW D III

IPC: B23K10/00

CPC classification number: H01L21/31116 ,  H01L21/02063 ,  H01L21/67069 ,  H05H1/24 ,  H05H1/2406 ,  H05H1/48 ,  H05H2001/2418

Abstract: An apparatus generating a plasma for removing metal oxide from a substrate is disclosed. The embodiment includes a powered electrode assembly, including a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and the first dielectric layer. The embodiment also includes a grounded electrode assembly disposed opposite the powered electrode assembly so as to form a cavity wherein the plasma is generated, the first wire mesh being shielded from the plasma by the first dielectric layer when the plasma is present in the cavity, the cavity having an outlet at one end for providing the plasma to remove the metal oxide.

Abstract translation: 公开了一种产生等离子体以从衬底去除金属氧化物的设备。 该实施例包括供电电极组件，该供电电极组件包括供电电极，第一介电层以及设置在供电电极和第一介电层之间的第一金属丝网。 该实施例还包括与电源电极组件相对设置的接地电极组件，以便形成产生等离子体的空腔，当等离子体存在于空腔中时，第一电介质层被等离子体与等离子体屏蔽， 腔在一端具有出口以提供等离子体以去除金属氧化物。

公开(公告)号：WO2004077608A3

公开(公告)日：2006-01-12

申请号：PCT/US2004004399

申请日：2004-02-12

Applicant: LAM RES CORP ,  WILCOXSON MARK H ,  BAILEY ANDREW D III

Inventor： WILCOXSON MARK H ,  BAILEY ANDREW D III

IPC: H01J37/32 ,  H01Q1/36 ,  H01Q7/00 ,  H01J7/24

CPC classification number: H01J37/32467 ,  H01J37/321 ,  H01Q1/36 ,  H01Q7/00

Abstract: An antenna arrangement (210) for generating an electric field inside a process chamber (202) through a window (212). Generally, the antenna arrangement (210) comprises an outer loop (610), comprising a first outer loop turn (618) disposed around an antenna axis (614), an inner loop (606), comprising a first inner loop turn (616) disposed around the antenna axis (614), wherein the inner loop (606) is closer to the antenna axis (614) than the outer loop (610) is to the antenna axis (614) in each azimuthal direction, and a radial connector (640) radially electrically connecting the outer loop (610) to the inner loop (606), wherein the radial connector (640) is placed a large distance from the window (212).

Abstract translation: 一种用于通过窗口（212）在处理室（202）内产生电场的天线装置（210）。 通常，天线装置（210）包括外环（610），包括设置在天线轴线（614）周围的第一外环路（618），内环路（606），包括第一内环路（616） 设置在所述天线轴线（614）周围，其中所述内环路（606）比所述外环路（610）在每个方位方向上相对于所述天线轴线（614）更靠近所述天线轴线（614），并且径向连接器 640）将所述外环（610）径向电连接到所述内环（606），其中所述径向连接器（640）与所述窗（212）放置距离很远。

公开(公告)号：WO2004084266A3

公开(公告)日：2005-05-06

申请号：PCT/US2004007527

申请日：2004-03-10

Applicant: LAM RES CORP ,  LOHOKARE SHRIKANT P ,  BAILEY ANDREW D III ,  HEMKER DAVID ,  COOK JOEL M

Inventor： LOHOKARE SHRIKANT P ,  BAILEY ANDREW D III ,  HEMKER DAVID ,  COOK JOEL M

IPC: B44C1/22 ,  H01L20060101 ,  H01L21/302 ,  H01L21/304 ,  H01L21/311 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/4763 ,  H01L21/768 ,  H01L33/00 ,  H01L21/4768

CPC classification number: H01L21/7684 ,  H01L21/31116 ,  H01L21/32115 ,  H01L21/32135 ,  H01L21/32136

Abstract: A system and method for planarizing a patterned semiconductor substrate (100) includes receiving a patterned semiconductor substrate. The patterned semiconductor substrate (100) having a conductive interconnect material (120) filling multiple of features in the pattern. The conductive interconnect material has an overburden portion (112). The overburden portion has a localized non-uniformity. A bulk portion of the overburden portion is removed to planarize the overburden portion (120). The substantially locally planarized overburden portion is mapped to determine a global non-uniformity. The substantially locally planarized overburden portion is etched to substantially remove the global non-uniformity.

Abstract translation: 用于平坦化图案化半导体衬底（100）的系统和方法包括接收图案化的半导体衬底。 图案化半导体衬底（100）具有填充图案中的多个特征的导电互连材料（120）。 导电互连材料具有覆盖层部分（112）。 覆盖层部分具有局部不均匀性。 去除覆盖层部分的主体部分以平坦化上覆层部分（120）。 映射基本上局部平坦化的覆盖层部分以确定全局不均匀性。 基本上局部平坦化的覆盖层部分被蚀刻以基本上去除全局不均匀性。

公开(公告)号：WO2004012221A3

公开(公告)日：2004-07-01

申请号：PCT/US0323304

申请日：2003-07-23

Applicant: LAM RES CORP ,  LOHOKARE SHRIKANT P ,  KUTHI ANDRAS ,  BAILEY ANDREW D III

Inventor： LOHOKARE SHRIKANT P ,  KUTHI ANDRAS ,  BAILEY ANDREW D III

IPC: H05H1/46 ,  C23F1/00 ,  H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/321 ,  H01J37/32174 ,  H01J37/32431 ,  H01J37/32623

Abstract: An apparatus and method for adjusting the voltage applied to a Faraday shield (112) of an inductively coupled plasma etching apparatus (101) is provided. An appropriate voltage is easily and variably applied to a Faraday shield such that sputtering of a plasma can be controlled to prevent and mitigate deposition of non-volatile reaction products that adversely affect an etching process. The appropriate voltage for a particular etching process or step is applied to the Faraday shield by simply adjusting a tuning capacitor (204, 210, 208, 206). It is not necessary to mechanically reconfigure the etching apparatus to adjust the Faraday shield voltage.

Abstract translation: 提供一种用于调整施加到电感耦合等离子体蚀刻装置（101）的法拉第屏蔽（112）的电压的装置和方法。 适当的电压容易且可变地施加到法拉第屏蔽，使得可以控制等离子体的溅射以防止和减轻不利地影响蚀刻工艺的非挥发性反应产物的沉积。 通过简单地调整调谐电容器（204,210,208,206）将用于特定蚀刻工艺或步骤的适当电压施加到法拉第屏蔽。 不需要机械地重新配置蚀刻装置来调节法拉第屏蔽电压。

公开(公告)号：WO2009137279A3

公开(公告)日：2010-02-04

申请号：PCT/US2009041730

申请日：2009-04-24

Applicant: LAM RES CORP ,  WONG SCOTT ,  LIN JEFFREY ,  BAILEY ANDREW D III ,  CHEN JACK ,  MOORING BENJAMIN W ,  HUANG CHUNG HO

Inventor： WONG SCOTT ,  LIN JEFFREY ,  BAILEY ANDREW D III ,  CHEN JACK ,  MOORING BENJAMIN W ,  HUANG CHUNG HO

IPC: H01L21/68

CPC classification number: H01L21/68

Abstract: Methods and systems to optimize wafer placement repeatability in semiconductor manufacturing equipment using a controlled series of wafer movements are provided. In one embodiment, a preliminary station calibration is performed to teach a robot position for each station interfaced to facets of a vacuum transfer module used in semiconductor manufacturing. The method also calibrates the system to obtain compensation parameters that take into account the station where the wafer is to be placed, position of sensors in each facet, and offsets derived from performing extend and retract operations of a robot arm. In another embodiment where the robot includes two arms, the method calibrates the system to compensate for differences derived from using one arm or the other. During manufacturing, the wafers are placed in the different stations using the compensation parameters.

Abstract translation: 提供了使用受控系列的晶片移动来优化半导体制造设备中的晶片布置重复性的方法和系统。 在一个实施例中，执行初步站校准以教导与用于半导体制造中的真空传递模块的面连接的每个站的机器人位置。 该方法还校准系统以获得考虑要放置晶片的工位的位置的补偿参数，每个面中的传感器的位置以及执行机器人臂的延伸和缩回操作导出的偏移。 在机器人包括两个臂的另一实施例中，该方法校准系统以补偿从使用一个臂或另一个臂导出的差异。 在制造期间，使用补偿参数将晶片放置在不同的台中。

公开(公告)号：WO2008042581B1

公开(公告)日：2008-12-11

申请号：PCT/US2007078578

申请日：2007-09-14

Applicant: LAM RES CORP ,  CHEN JACK ,  BAILEY ANDREW D III ,  MOORING BEN ,  CAIN STEPHEN J

Inventor： CHEN JACK ,  BAILEY ANDREW D III ,  MOORING BEN ,  CAIN STEPHEN J

IPC: G03B15/00 ,  B08B7/00 ,  B41B17/00 ,  G01B11/00 ,  G01B11/02 ,  G01N21/00 ,  G01R31/26 ,  G03B15/02 ,  G03B15/03

CPC classification number: H01L21/681 ,  H01L21/67259 ,  H01L21/67288

Abstract: A bevel inspection module for capturing images of a substrate is provided. The module includes a rotational motor, which is attached to a substrate chuck and is configured to rotate the substrate chuck thereby allowing the substrate to revolve. The module further includes a camera and an optic enclosure, which is attached to the camera and is configured to rotate, enabling light to be directed toward the substrate. The camera is mounted from a camera mount, which is configured to enable the camera to rotate on a 180 degree plane allowing the camera to capture images of at least one of a top view, a bottom view, and a side view of the substrate. The module yet also includes a backlight arrangement, which is configured to provide illumination to the substrate, thereby enabling the camera to capture the images, which shows contrast between the substrate and a background.

Abstract translation: 提供了一种用于捕获基板的图像的斜面检查模块。 模块包括旋转马达，其连接到基板卡盘并且构造成旋转基板卡盘，从而允许基板旋转。 该模块还包括照相机和光学外壳，其附接到相机并且被配置为旋转，使得光能够被引向基板。 照相机从照相机安装座安装，照相机安装件被配置为使照相机能够在180度平面上旋转，允许照相机拍摄基板的俯视图，底视图和侧视图中的至少一个的图像。 该模块还包括背光布置，其被配置为向基板提供照明，从而使得相机能够捕获显示基板和背景之间的对比度的图像。

公开(公告)号：WO2006081004B1

公开(公告)日：2008-10-30

申请号：PCT/US2005045729

申请日：2005-12-16

Applicant: LAM RES CORP ,  LOHOKARE SHRIKANT P ,  BAILEY ANDREW D III

Inventor： LOHOKARE SHRIKANT P ,  BAILEY ANDREW D III

IPC: H05H1/24 ,  C23C14/00 ,  H05K9/00

CPC classification number: H01J37/32633 ,  C23C16/4404 ,  H01J37/32623

Abstract: In a plasma processing system, a method of reducing byproduct deposits on a set of plasma chamber surfaces of a plasma processing chamber is disclosed. The method includes providing a deposition barrier in the plasma processing chamber, the deposition barrier is configured to be disposed in a plasma generating region of the plasma processing chamber, thereby permitting at least some process byproducts produced when a plasma is struck within the plasma processing chamber to adhere to the deposition barrier and reducing the byproduct deposits on the set of plasma processing chamber surfaces.

Abstract translation: 在等离子体处理系统中，公开了一种在等离子体处理室的一组等离子体室表面上减少副产物沉积的方法。 所述方法包括在所述等离子体处理室中设置沉积阻挡层，所述沉积阻挡层被配置为设置在所述等离子体处理室的等离子体产生区域中，从而允许在所述等离子体处理室内等离子体被击中时产生的至少一些过程副产物 以附着到沉积屏障上并减少等离子体处理室表面组上的副产物沉积物。

公开(公告)号：WO2006081004A3

公开(公告)日：2008-08-14

申请号：PCT/US2005045729

申请日：2005-12-16

Applicant: LAM RES CORP ,  LOHOKARE SHRIKANT P ,  BAILEY ANDREW D III

Inventor： LOHOKARE SHRIKANT P ,  BAILEY ANDREW D III

IPC: H05H1/24 ,  C23C14/00 ,  H05K9/00

CPC classification number: H01J37/32633 ,  C23C16/4404 ,  H01J37/32623

Abstract: In a plasma processing system, a method of reducing byproduct deposits on a set of plasma chamber surfaces of a plasma processing chamber is disclosed. The method includes providing a deposition barrier in the plasma processing chamber, the deposition barrier is configured to be disposed in a plasma generating region of the plasma processing chamber, thereby permitting at least some process byproducts produced when a plasma is struck within the plasma processing chamber to adhere to the deposition barrier and reducing the byproduct deposits on the set of plasma processing chamber surfaces.

Abstract translation: 在等离子体处理系统中，公开了一种减少等离子体处理室的一组等离子体室表面上的副产品沉积物的方法。 该方法包括在等离子体处理室中提供沉积屏障，沉积屏障被配置为设置在等离子体处理室的等离子体发生区域中，由此允许当在等离子体处理室内打击等离子体时产生至少一些处理副产物 附着于沉积屏障并减少在该组等离子体处理室表面上的副产物沉积物。

公开(公告)号：WO2006044722A3

公开(公告)日：2006-06-29

申请号：PCT/US2005037125

申请日：2005-10-12

Applicant: LAM RES CORP ,  HOWALD ARTHUR M ,  KUTHI ANDRAS ,  BAILEY ANDREW D III

Inventor： HOWALD ARTHUR M ,  KUTHI ANDRAS ,  BAILEY ANDREW D III

IPC: G06F19/00 ,  H01J7/24 ,  H01J37/32 ,  H03H7/40

CPC classification number: H01J37/32082 ,  H01J37/32183 ,  H01J37/3299 ,  H03H7/40 ,  H05H1/46

Abstract: Methods for improving the stability of RF power delivery to a plasma load are disclosed (806). The method includes adding an RF impedance resistor and or a RF power attenuator at one of specific locations in the RF power system to lower the impedance derivatives while keeping the impedance marching circuit in tune with the RF transmission line impedance (804).

Abstract translation: 公开了用于提高RF功率输送到等离子体负载的稳定性的方法（806）。 该方法包括在RF功率系统的特定位置之一处添加RF阻抗电阻器和RF功率衰减器，以降低阻抗导数，同时保持阻抗行进电路与RF传输线路阻抗匹配（804）。