公开(公告)号：GB2522816A

公开(公告)日：2015-08-05

申请号：GB201508886

申请日：2013-12-03

Applicant: LUXVUE TECHNOLOGY CORP

Inventor： SAKARIYA KAPIL V ,  BIBL ANDREAS ,  HU HSIN-HUA

IPC: H01L33/60 ,  H01L27/32

Abstract: Reflective bank structures for light emitting devices are described. The reflective bank structure may include a substrate, an insulating layer on the substrate, and an array of bank openings in the insulating layer with each bank opening including a bottom surface and sidewalls. A reflective layer spans sidewalls of each of the bank openings in the insulating layer.

公开(公告)号：MX2014006032A

公开(公告)日：2015-01-16

申请号：MX2014006032

申请日：2012-11-07

Applicant: LUXVUE TECHNOLOGY CORP

Inventor： BIBL ANDREAS ,  HIGGINSON JOHN A ,  LAW HUNG-FAI STEPHEN ,  HU HSIN-HUA

IPC: H01L21/58 ,  H01L21/677 ,  H05K13/04

Abstract: Se describen un cabezal de transferencia del microdispositivo y un arreglo de cabezales. En una modalidad, el cabezal de transferencia del microdispositivo incluye un sustrato base, una estructura de mesa con paredes laterales, un electrodo formado sobre la estructura de mesa y una capa dieléctrica que cubre el electrodo. Se puede aplicar un voltaje al cabezal de transferencia del microdispositivo y al arreglo de cabezales para recoger un microdispositivo de un sustrato portador y liberar el microdispositivo sobre un sustrato receptor.

公开(公告)号：AU2012339941A1

公开(公告)日：2014-06-05

申请号：AU2012339941

申请日：2012-11-08

Applicant: LUXVUE TECHNOLOGY CORP

Inventor： BIBL ANDREAS ,  HIGGINSON JOHN A ,  LAW HUNG-FAI STEPHEN ,  HU HSIN-HUA

IPC: H01L21/677 ,  B65G47/91 ,  B65G49/07 ,  H05K13/02 ,  H05K13/04

Abstract: A method of transferring a micro device and an array of micro devices are disclosed. A carrier substrate carrying a micro device connected to a bonding layer is heated to a temperature below a liquidus temperature of the bonding layer, and a transfer head is heated to a temperature above the liquidus temperature of the bonding layer. Upon contacting the micro device with the transfer head, the heat from the transfer head transfers into the bonding layer to at least partially melt the bonding layer. A voltage applied to the transfer head creates a grip force which picks up the micro device from the carrier substrate.

公开(公告)号：AU2012339925A1

公开(公告)日：2014-06-05

申请号：AU2012339925

申请日：2012-11-07

Applicant: LUXVUE TECHNOLOGY CORP

Inventor： BIBL ANDREAS ,  HIGGINSON JOHN A ,  LAW HUNG-FAI STEPHEN ,  HU HSIN-HUA

IPC: H01L21/58 ,  H01L21/677 ,  H05K13/04

Abstract: A micro device transfer head and head array are disclosed. In an embodiment, the micro device transfer head includes a base substrate, a mesa structure with sidewalls, an electrode formed over the mesa structure, and a dielectric layer covering the electrode. A voltage can be applied to the micro device transfer head and head array to pick up a micro device from a carrier substrate and release the micro device onto a receiving substrate.

公开(公告)号：AU2014370328A1

公开(公告)日：2016-04-07

申请号：AU2014370328

申请日：2014-11-25

Applicant: LUXVUE TECHNOLOGY CORP

Inventor： MCGRODDY KELLY ,  HU HSIN-HUA ,  BIBL ANDREAS ,  CHAN CLAYTON KA TSUN ,  HAEGER DANIEL ARTHUR

IPC: H01L33/14 ,  G02F1/1335 ,  G09G3/32 ,  H01L23/00 ,  H01L25/075 ,  H01L27/12 ,  H01L27/15 ,  H01L33/16 ,  H01L33/20

Abstract: Methods and structures for forming arrays of LED devices are disclosed. The LED devices in accordance with embodiments of the invention may include an internally confined current injection area to reduce non-radiative recombination due to edge effects. Several manners for confining current may include etch removal of a current distribution layer, etch removal of a current distribution layer and active layer followed by mesa re-growth, isolation by ion implant or diffusion, quantum well intermixing, and oxide isolation.

公开(公告)号：IN3734CHN2014A

公开(公告)日：2015-09-04

申请号：IN3734CHN2014

申请日：2014-05-16

Applicant: LUXVUE TECHNOLOGY CORP

Inventor： BIBL ANDREAS ,  HIGGINSON JOHN A ,  LAW HUNG FAI STEPHEN ,  HU HSIN HUA

IPC: H01L21/58 ,  H01L21/677 ,  H05K13/04

Abstract: A micro device transfer head and head array are disclosed. In an embodiment the micro device transfer head includes a base substrate a mesa structure with sidewalls an electrode formed over the mesa structure and a dielectric layer covering the electrode. A voltage can be applied to the micro device transfer head and head array to pick up a micro device from a carrier substrate and release the micro device onto a receiving substrate.

公开(公告)号：GB2522590A

公开(公告)日：2015-07-29

申请号：GB201509556

申请日：2013-12-10

Applicant: LUXVUE TECHNOLOGY CORP

Inventor： SAKARIYA KAPIL V ,  BIBL ANDREAS ,  MCGRODDY KELLY

IPC: G09G3/32 ,  G02F1/133 ,  H01L25/16

Abstract: A light emitting assembly is described. In one embodiment, one or more light emitting diode (LED) devices and one or more microcontrollers are bonded to a same side of a substrate, with the one or more microcontrollers to switch and drive the one or more LED devices.

公开(公告)号：MX2014005969A

公开(公告)日：2015-05-15

申请号：MX2014005969

申请日：2012-11-08

Applicant: LUXVUE TECHNOLOGY CORP

Inventor： BIBL ANDREAS ,  HIGGINSON JOHN A ,  LAW HUNG-FAI STEPHEN ,  HU HSIN-HUA

IPC: H01L33/36

Abstract: Se describe un microdiodo emisor de luz (LED) y un método para formar un arreglo de microLEDs para transferirse a un sustrato receptor. La estructura de microLEDs puede incluir un microdiodo p-n y una capa de metalización, con la capa de metalización entre el microdiodo p-n y una capa de enlace. Una capa de barrera dieléctrica de conformación puede extenderse a las paredes laterales del microdiodo p-n. La estructura de microLEDs y arreglo de microLEDs pueden recogerse y transferirse a un sustrato receptor.

公开(公告)号：AU2012339938A1

公开(公告)日：2014-06-05

申请号：AU2012339938

申请日：2012-11-08

Applicant: LUXVUE TECHNOLOGY CORP

Inventor： HU HSIN-HUA ,  BIBL ANDREAS ,  HIGGINSON JOHN A ,  LAW HUNG-FAI STEPHEN

IPC: H01L33/46 ,  H01L33/36 ,  H01L33/48

Abstract: A method of fabricating and transferring a micro device and an array of micro devices to a receiving substrate are described. In an embodiment, an electrically insulating layer is utilized as an etch stop layer during etching of a p-n diode layer to form a plurality of micro p-n diodes. In an embodiment, an electrically conductive intermediate bonding layer is utilized during the formation and transfer of the micro devices to the receiving substrate.

公开(公告)号：DE112013005899T5

公开(公告)日：2015-09-10

申请号：DE112013005899

申请日：2013-12-03

Applicant: LUXVUE TECHNOLOGY CORP

Inventor： SAKARIYA KAPIL V ,  BIBL ANDREAS ,  HU HSIN-HUA

IPC: H01L33/60 ,  H01L33/48

Abstract: Es werden reflektierende Bankstrukturen für lichtemittierende Vorrichtungen beschrieben. Die reflektierenden Bankstrukturen können ein Substrat, eine Isolierschicht auf dem Substrat und eine Anordnung von Banköffnungen in der Isolierschicht einschließen, wobei jede Banköffnung eine untere Oberfläche und Seitenwände einschließt. Eine reflektierende Schicht umspannt die Seitenwände jeder der Banköffnungen in der Isolierschicht.