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    METHOD AND APPARATUS FOR MAKING A COLOR CATHODE-RAY TUBE
    12.
    发明专利
    METHOD AND APPARATUS FOR MAKING A COLOR CATHODE-RAY TUBE 未知

    公开(公告)号：CA924157A

    公开(公告)日：1973-04-10

    申请号：CA101400

    申请日：1970-12-23

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： FUKUMA HIROSHI ,  WATARAI YOSHIAKI ,  OKAMOTO MASAHIRO ,  ASHIZAKI SHIGEYA ,  NINAGAWA CHIKAYOSHI ,  KOBAYASHI YOSHICHIKA

    IPC: H01J9/227

    Abstract: 1302020 Colour television tubes MATSUSHITA ELECTRONICS CORP 18 Dec 1970 [29 Dec 1969 (2)] 60233/70 Heading H1D In the manufacture of a colour television screen by a photo-resist process the light source is provided by a ring, or by a point source rotating in a ring, the diameter of which is large compared with the diameter of the apertures in the shadow mask through which the photo-sensitive material is exposed. As illustrated in Fig. 5 exposure of an emulsion 9 through the aperture 7 of a shadow mask by an annular light source 12 leaves a sharply defined unexposed central area 14 1 which may be smaller than the aperture 7. If the emulsion contains phosphor and a reversal type photosensitive fixing agent, this process may be used to deposit phosphor dots of one or more colours. Alternativelythe process may be used to deposit an opaque area between the phosphor areas, and in this case the emulsion contains light absorbing material and a positive type photosensitive fixing agent. In Fig. 5 the light source comprises a quartz cylinder provided with a conical recess to leave an annular rim 12 which provides the effective light source when the lower end of the cylinder is illuminated. As an alternative a point source may be rotated in a circle. In one example the inner and outer diameters of the source 12 are are 16À0 and 17À2 mm., the diameter of the aperture 7 is 0À32 mm. and the diameter of the phosphor dot is 0À26 mm.

    14.
    发明专利
    未知

    公开(公告)号：DE2606740A1

    公开(公告)日：1977-01-20

    申请号：DE2606740

    申请日：1976-02-19

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： KOBAYASHI YOSHICHIKA ,  AKUTSU HIDEZOH ,  IWAMA KATSUAKI ,  YAMAGUCHI MASAYUKI

    IPC: C09K11/77 ,  H01J61/44 ,  H01J61/20 ,  H01J61/82 ,  C09K11/00

    Abstract: 1533162 Luminescent materials and uses thereof MATSUSHITA ELECTRONICS CORP 18 Feb 1976 [19 Feb 1975] 6284/76 Heading C4S A high p Hg vapour lamp comprises an arc tube 1 capable of emitting visible and u.v. light, an outer tube 23 and phosphor coating 24 consisting of two phosphors, a red emitting one of europium activated yttrium vanadate or europium activated yttrium vanadate phosphate, and a blue-green emitting one of bivalent europium and bivalent manganese activated phosphor of formula where 0À03#x#0À4, 0À01#y#0À6 and 12#z#20. Optionally 12#z#16 and the vanadate phosphor content is 20 to 95% by wt. The blue green phosphor emitting at 436 to 546 nm. produces the desired colour rendition at the required colour temperatures. Variation of the x/y ratio changes the colour temperature components at 450 nm. and 5/5 nm. of the Eu 2+ and Mn 2+ respectively. Emission characteristics for specified phosphors are disclosed (Fig. 2, not shown), variations with temperature discussed w.r.t. Fig. 3 (not shown), with Al content (Fig. 5, not shown), and diffraction analyses discussed w.r.t. Fig. 6 (not shown) indicate a single phase, α-Al 2 O 3 phase or #-Al 2 O 3 phase according to the z value. Colour temperature variations with relative concentrations are disclosed for specific phosphors (Fig. 7, not shown), and phosphor coverage/cm. 2 given. The examples specify further phosphors, colour indices and application with nitrocellulose butyl acetate solution. The spectral lamp distribution may be as in Fig. 8 (not shown). The inner arc tube contains Hg and an inert gas such as Ar, while the outer envelope contains nitrogen.

    CHROMIUM OXIDE TREATMENT OF PHOSPHOR SCREENS
    15.
    发明专利
    CHROMIUM OXIDE TREATMENT OF PHOSPHOR SCREENS 未知

    公开(公告)号：CA954364A

    公开(公告)日：1974-09-10

    申请号：CA130416

    申请日：1971-12-17

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： KOBAYASHI YOSHICHIKA ,  YAKENO KOUZI

    IPC: H01J9/227

    Abstract: A phosphor screen for color picture tube is usually produced by the first step which comprises suspending a blue emission phosphor in an aqueous solution of photo-setting photosensitive material comprising polyvinyl alcohol and ammonium dichromate, applying thus obtained suspension to inner surface of face panel to form a photosensitive film, exposing said film through apertures of shadow mask and developing the exposed film to form dotty phosphor film and the second and the third steps of forming the dotty phosphor films of green and red emissions in this order by substantially the same procedure as that of the first step. According to the present invention, the dotty phosphor films formed at said first and second steps are treated with chromic acid solution to harden said films, whereby color mixing, namely, so-called color fogging caused by a phosphor of other color emission used at the subsequent step is reduced and color purity of emission from phosphor screen face is improved.

    18.
    发明专利
    未知

    公开(公告)号：DE2148465A1

    公开(公告)日：1972-03-30

    申请号：DE2148465

    申请日：1971-09-28

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： OHKUBO YOSHIO ,  KOBAYASHI YOSHICHIKA ,  TAKAMURA TOHRU ,  AOKI TADASHI MORIGUCHI ,  SANO AKIRA

    IPC: H01J29/45 ,  H01L21/00 ,  H01L21/02 ,  H01L21/316 ,  H01L27/00 ,  H01L31/10 ,  H01J29/43

    Abstract: 1337465 Coating with glass MATSUSHITA ELECTRONICS CORP 28 Sept 1971 [29 Sept 1970] 45147/71 Heading C1M [Also in Division H1] A target for an image pick-up tube comprising a silicon substrate 31, Fig. 3, coated with a layer of silicon dioxide 34A provided with apertures through which P-type areas 33 are exposed is coated with a layer of lead silicate glass 34B and 34E formed by the combination of lead monoxide with the silicon or silicon dioxide surface. The lead silicate glass layer should have a specific resistance of 10 8 -10 12 ohm-cm. and a thickness of 0À1-0À5 microns. In manufacture the silicon wafer is provided with the oxide layer and the P-type areas in known manner and lead is vapour deposited over this surface; heating at 450-650‹ C. in an oxidizing atmosphere converts the lead to lead monoxide which reacts with the surface to form lead silicate glass. Surplus lead monoxide remaining after the above process is removed by washing in acetic acid. As an alternative the lead monoxide layer can be formed directly by vapour deposition. The lead glass film 34E over the junction areas may be removed since it adds resistance to the path of the electron beam.

    20.
    发明专利
    未知

    公开(公告)号：DE2546650A1

    公开(公告)日：1976-04-29

    申请号：DE2546650

    申请日：1975-10-17

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： OHKUBO YOSHIO ,  KOBAYASHI YOSHICHIKA

    IPC: H01L21/033 ,  H01L21/311 ,  H01L21/312 ,  H01L27/146 ,  H01L29/808 ,  H01L21/30

    Abstract: 1522630 Semiconductor-device manufacture MATSUSHITA ELECTRONICS CORP 15 Oct 1975 [18 act 1974 20 Nov 1974] 42110/75 Heading H1K During manufacture of a semiconductor device one or more recesses are formed in one face of a semiconductor wafer, a layer of etchable material is applied so as to be thicker in the recesses than on the intervening regions, the material removed progressively by etching treatment, e.g. in a low pressure oxygen glow discharge until the said intervening regions are exposed, and the material remaining in the recesses used as a mask in treatment of the exposed surface to form a layer of different conductivity thereon. To make a JUGFET the surface of an epitaxial layer on a more highly doped P type Si substrate constituting the drain is recessed by etching through thermal oxide masking to leave a mesa of serpentine form, the masking being retained for formation of the gate region in the recessed area by ion implantation and then removed. After formation of a thermal oxide layer overall the acid-resisting layer, e.g. of a rubber derivative or other specified material is applied overall and partially removed to expose the mesa, the oxide thereon removed by etching and dopant diffused in to form a source region. Source, drain and gate contacts are then formed. To make a photodiode target array a lightly doped N-type Si wafer is divided into targets of the required area, the backsides of which are then etched to form a diaphragm supported by a thick rim and then diffused with phosphorus and heat treated in hydrogen. Intersecting grooves are then formed in the front face of the wafer, to define a rectangular array of mesas, the face coated with thermal oxide, the acid resist applied and confined to the grooves as described above, the exposed oxide removed and boron diffused in to form PN junctions in the mesas.

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