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公开(公告)号：EP2843026A4
公开(公告)日：2016-03-23
申请号：EP13781483
申请日：2013-04-18
Applicant: KOHA CO LTD , NAT INST FOR MATERIALS SCIENCE
Inventor： WATANABE MAKOTO , INOMATA DAISUKE , AOKI KAZUO , SHIMAMURA KIYOSHI , GARCIA VILLORA ENCARNACION ANTONIA
CPC classification number: C09K11/7774 , C30B15/00 , C30B15/04 , C30B29/28 , H01L33/501 , H01L33/502 , H01L33/505 , H01L33/507 , H01L2224/13 , H01L2224/48091 , H01L2224/49107 , H01L2924/12044 , H01L2933/0041 , H01L2924/00014 , H01L2924/00
Abstract: One purpose of the invention is to provide a phosphor with excellent quantum efficiency, a method for manufacturing the same, and a light-emitting device that uses this phosphor. One embodiment provides a phosphor comprising monocrystals with YAG crystals as a matrix, the quantum efficiency of the phosphor at 25°C being 92% or higher at an excitation light wavelength of 460 nm.
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12.发明公开AlN MONOCRYSTALLINE SCHOTTKY BARRIER DIODE AND METHOD FOR PRODUCING SAME 审中-公开WITH其制造单晶AlN衬底和方法肖特基二极管
公开(公告)号：EP2811526A4
公开(公告)日：2015-10-21
申请号：EP13742926
申请日：2013-01-30
Applicant: NAT INST FOR MATERIALS SCIENCE
IPC: H01L21/329 , H01L21/20 , H01L29/20 , H01L29/45 , H01L29/47 , H01L29/872
CPC classification number: H01L29/66212 , H01L29/2003 , H01L29/452 , H01L29/475 , H01L29/872
Abstract: An AlN single crystal Schottky barrier diode including: an AlN single crystal substrate having a defect density of 10 6 cm -2 or less and a thickness of 300 µm or more; a first electrode formed on one surface of the AlN single crystal substrate; and a second electrode formed on one surface of the AlN single crystal substrate while being spaced apart from the first electrode, the AlN single crystal Schottky barrier diode being provided with: a rectifying property such that an on-off ratio at the time of applying 10 V and -40 V is at least 10 3 even at a high temperature of 573 K; a high voltage resistance such that a voltage can be applied at least within a range of -40 V to 10 V; and a low on-resistance characteristic such that a current begins to flow at no greater than 5 V.
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公开(公告)号：EP2634234A4
公开(公告)日：2015-01-28
申请号：EP11836463
申请日：2011-10-28
Applicant: NAT INST FOR MATERIALS SCIENCE
Inventor： AOKI KAZUO , WATANABE MAKOTO , SHIMAMURA KIYOSHI , GARCIA VILLORA ENCARNACION ANTONIA
CPC classification number: H01L33/502 , C09K11/7774 , C30B15/00 , C30B29/28 , H01L33/505 , H01L2224/13 , H01L2224/48091 , H01L2224/49107 , H05B33/14 , H01L2924/00014
Abstract: [Problem] To provide a light-emitting device which does not undergo the deterioration in luminous efficiency associated with the long-term use. [Solution] A light-emitting device (1) comprises a light-emitting element (10) which can emit blue light and a phosphor (2) which is composed of a single kind of single crystal and can emit yellow light upon the irradiation with the light emitted from the light-emitting element (10) which serves as excitation light. Thus, it becomes possible to prevent the deterioration in luminous efficiency associated with the deterioration in a binder or the like compared with a light-emitting device which utilizes multiple kinds of granular phosphors, because any binder for binding phosphors to each other is not required in the light-emitting device (1).
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14.发明公开UV-EXCITED RED-LIGHT EMITTING MATERIAL, AND LIGHT EMITTING DIODE 有权UV-ERREGTES LICHTEMITTIERENDES材料UND LEUCHTDIODE
公开(公告)号：EP2774967A4
公开(公告)日：2015-01-21
申请号：EP13785211
申请日：2013-04-25
Applicant: NAT INST FOR MATERIALS SCIENCE
Inventor： SHIMAMURA KIYOSHI , GARCIA VILLORA ENCARNACION ANTONIA
CPC classification number: C09K11/7733 , C09K11/7774 , C30B11/00 , C30B15/00 , C30B29/12 , H01L33/502 , H01L33/504 , H01L2224/13 , H01L2224/48091 , H01L2224/49107 , Y02B20/181 , H01L2924/00014
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15.发明专利
公开(公告)号：RU2527082C2
公开(公告)日：2014-08-27
申请号：RU2012120750
申请日：2010-10-20
Applicant: FUJIKURA LTD , NAT INST FOR MATERIALS SCIENCE
Inventor： SANADA KAZUO , SHIMAMURA KIYOSHI , GARCIA VILLORA ENCARNACION ANTONIA
Abstract: Изобретениеотноситсяк технологииполучениямонокристаллаалюмотербиевогограната, которыйможетбытьиспользованв качествевращателяплоскостиполяризации (Фарадеевскийвращатель) воптике. Монокристаллпредставляетсобоймонокристаллалюмотербиевогограната, вкоторомчастьалюминиязамещеналютецием (Lu) икоторыйпредставленследующейхимическойформулой:, вкоторой L представляетсобой Sc, M представляетсобой, поменьшеймере, одинтипэлемента, выбранногоизгруппы, состоящейиз Sc и Y, N содержит Lu, и a, b, х, y и z удовлетворяютследующимформулам: 2,8≤a≤3,2; 1,8≤b≤2,2; 0,01≤x≤0,6; 0≤y≤0,5; и -0,5≤z≤0,5. Монокристаллданногосоставаспособенобеспечиватьбольшийуголповоротаплоскостиполяризациипосравнениюс монокристалломгранатанаосноветербияи галлия (TGG) нетольков областидлинволн 1064 нмилиболее, нои вобластидлинволнменеечем 1064 нм, атакжеспособенв достаточнойстепениподавлятьуменьшениепропусканияв коротковолновойобласти (от 400 до 700 нм) вотличиеот TGG. Приэтомизобретениепозволяетувеличитьразмерполучаемыхкристаллов. 4 н. и 6 з.п. ф-лы, 9 ил., 4 пр.
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Patent Agency Ranking
公开(公告)号：DE112008003392T5
公开(公告)日：2010-10-14
申请号：DE112008003392
申请日：2008-12-12
Applicant: NAT INST FOR MATERIALS SCIENCE
Inventor： MASA YOSHIHIKO , SHIMAMURA KIYOSHI , GARCIA VILLORA
IPC: G02F1/37
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17.发明专利
公开(公告)号：CA2778173A1
公开(公告)日：2011-04-28
申请号：CA2778173
申请日：2010-10-20
Applicant: FUJIKURA LTD , NAT INST FOR MATERIALS SCIENCE
Inventor： SANADA KAZUO , SHIMAMURA KIYOSHI , GARCIA VILLORA ENCARNACION ANTONIA
Abstract: Provided is a single crystal for optical isolators which has a larger Faraday rotation angle than single-crystal TGG in a range of wavelengths not shorter than 1,064 nm or in a range of wavelengths shorter than 1,064 nm and which renders an increase in size possible. Also provided are a process for producing the single crystal, an optical isolator, and an optical processor using the optical isolator. The single crystal is characterized by comprising a single crystal of terbium-aluminum garnet, mainly the aluminum having been partly replaced with lutetium.
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公开(公告)号：CA2805838C
公开(公告)日：2016-02-09
申请号：CA2805838
申请日：2011-07-22
Applicant: FUJIKURA LTD , NAT INST FOR MATERIALS SCIENCE
Inventor： FUNAKI AKIHARU , HATANAKA TSUBASA , SHIMAMURA KIYOSHI , GARCIA VILLORA ENCARNACION ANTONIA
Abstract: The present invention is a garnet-type single crystal represented by the following general formula: (Tb3-x Sc x) (Sc2-y Al y)Al3O12-z (1) (wherein, x satisfies 0
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公开(公告)号：AU2011283819A1
公开(公告)日：2013-02-07
申请号：AU2011283819
申请日：2011-07-22
Applicant: FUJIKURA LTD , NAT INST FOR MATERIALS SCIENCE
Inventor： FUNAKI AKIHARU , HATANAKA TSUBASA , SHIMAMURA KIYOSHI , GARCIA VILLORA ENCARNACION ANTONIA
Abstract: The present invention provides a garnet single crystal which is represented by the following general formula (1). (Tb
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公开(公告)号：CA2805838A1
公开(公告)日：2012-02-02
申请号：CA2805838
申请日：2011-07-22
Applicant: FUJIKURA LTD , NAT INST FOR MATERIALS SCIENCE
Inventor： FUNAKI AKIHARU , HATANAKA TSUBASA , SHIMAMURA KIYOSHI , GARCIA VILLORA ENCARNACION ANTONIA
Abstract: The present invention provides a garnet single crystal which is represented by the following general formula (1). (Tb3-xScx)(Sc2-yAly)Al3O12-z (1) (In the formula, x satisfies 0
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