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公开(公告)号：JPH1167058A
公开(公告)日：1999-03-09
申请号：JP21640697
申请日：1997-08-11
Applicant: NEC CORP
Inventor： TOMIHARI YOSHINORI
Abstract: PROBLEM TO BE SOLVED: To make emission currents uniform between an inner separation area and an outermost separation area during normal operation and to keep the corners of blocks from being recessed by causing the blocks to be separated from one another by independent trenches surrounding the blocks. SOLUTION: Emitters 3, insulating layers 4, and gate electrodes 5 are formed on a silicon substrate 2, and the top of the silicon substrate 2 is divided into thirty-six blocks by trenches 1 in each of which a BPSG (silica glass mixed with boron and phosphor) film 6 is buried. In this case, since the silicon substrate 2 surrounded by the trenches 1 serving as the paths of current has resistance determined by substrate density, the size of each block surrounded by the trench 1, and the depth of the trench 1, a voltage drop occurs if electrons are emitted from each emitter 3. Depletion layers are formed from the side wall of the trench 1 to immediately below the emitter 3, but since the blocks are separated from one another by the trenches 1, the extensions of the depletion layers become equal, so that the emission currents of the blocks can be made uniform.
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公开(公告)号：JPH10269931A
公开(公告)日：1998-10-09
申请号：JP7545597
申请日：1997-03-27
Applicant: NEC CORP
Inventor： OKAMOTO AKIHIKO , TAKEMURA HISASHI , TOMIHARI YOSHINORI , TAKADA TOSHIAKI
Abstract: PROBLEM TO BE SOLVED: To provide a field emission type cold cathode, capable of limiting an overcurrent generated at the time of electric discharge, causing no short circuit destruction due to electric discharge destruction, moreover realizing high-frequency action and low electric power consumption, and restraining the temperature rise of an element. SOLUTION: This cold cathode element is divided into three n-type semiconductor regions: an n-type semiconductor region 3 formed so as to envelop an emitter 6 lower part by a p-type semiconductor region 5, an n-type semiconductor region 2 formed so as to be enveloped by a p-type semiconductor region 2 in the lower part of the region 3, and an n-type semiconductor region 1 formed moreover in the lower part of the region 2. Here, the cross dection area of the region 2 is made smaller than that of the region 3, thereby making an n-type region, composed of three n-type semiconductor regions, have a constricted shape.
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13.发明专利
公开(公告)号：JP2005227403A
公开(公告)日：2005-08-25
申请号：JP2004034287
申请日：2004-02-10
Inventor： TOMIHARI YOSHINORI
IPC: G02F1/1335 , G02F1/1343 , G02F1/1362 , G02F1/1368 , H01L21/3205 , H01L23/52 , H01L29/786
CPC classification number: G02F1/136209 , G02F2001/13629
Abstract: PROBLEM TO BE SOLVED: To inexpensively realize light reflection performance and an electrolytic corrosion preventing effect equivalent to the case of constructing wiring with silver only, by constructing the wiring with a layered product of a metal layer composed of aluminum or an aluminum alloy and that composed of silver or a silver alloy. SOLUTION: The wiring 9 composed of a first metal layer 9a composed of an aluminum film or an aluminum alloy film and a second metal layer 9b composed of a silver film or a silver alloy film patterned in the same shape as that of the first metal layer 9a is formed on a second interlayer insulating film 8. The wiring 9 is patterned so as to be superposed on respective gate lines 5 and respective data lines 7 of a corresponding TFT and is disposed so as to cover the TFT. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract translation: 要解决的问题：为了廉价地实现与仅用银构造布线的情况相当的光反射性能和电解腐蚀防止效果，通过用由铝或铝合金构成的金属层的层叠体构成布线 由银或银合金组成。 解决方案：由铝膜或铝合金膜构成的第一金属层9a和由银膜构成的第二金属层9b或与 第一金属层9a形成在第二层间绝缘膜8上。布线9被图案化以重叠在相应TFT的各个栅极线5和相应的数据线7上，并且被布置为覆盖TFT。 版权所有（C）2005，JPO＆NCIPI
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公开(公告)号：JP2005097003A
公开(公告)日：2005-04-14
申请号：JP2000163423
申请日：2000-05-31
Inventor： TOMIHARI YOSHINORI
CPC classification number: B82Y10/00 , H01J9/025 , H01J2201/30469
Abstract: PROBLEM TO BE SOLVED: To provide a method for fixing uniformly dispersed carbon nanotubes over a large area at high density. SOLUTION: This method for fixing the carbon nanotube has: a stage where a carbon nanotube film 1 is formed on a fixture having a flat surface; a stage where a fixing agent layer 3 for fixing the carbon nanotube film 1 on a substrate 2 is formed on the carbon nanotube film 1; a stage where the carbon nanotube film 1 formed on the fixture and the fixing agent layer 3 are transferred to the surface of the substrate 2; and a stage where the fixture is removed. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract translation: 要解决的问题：提供一种以高密度在大面积上均匀分散的碳纳米管固定的方法。 解决方案：用于固定碳纳米管的方法具有：在具有平坦表面的夹具上形成碳纳米管膜1的阶段; 在碳纳米管膜1上形成用于将碳纳米管膜1固定在基板2上的固定剂层3的阶段; 将形成在固定剂上的碳纳米管膜1和定影剂层3转印到基板2的表面的阶段; 以及去除夹具的阶段。 版权所有（C）2005，JPO＆NCIPI
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公开(公告)号：JP2002170481A
公开(公告)日：2002-06-14
申请号：JP2000362396
申请日：2000-11-29
Applicant: NEC CORP
Inventor： ITO FUMINORI , OKADA HIROKO , TOMIHARI YOSHINORI , KONUMA KAZUO , OKAMOTO AKIHIKO
Abstract: PROBLEM TO BE SOLVED: To provide a field emission cold cathode which produces stable emission characteristics without causing element breakdown over a long period by making a gate insulating layer and a gate electrode layer sufficiently flat. SOLUTION: This field emission cold cathode comprises: a CNT(carbon nano tube) layer 3 which includes a plurality of CNT laid on a glass substrate 1 and forms an emitter 3b; a gate insulating layer (9) which exposes the surface of the CNT layer 3 through openings 7 passing through both layers which are formed one after another on the CNT layer 3 and composing the gate insulating layer (9); a gate electrode layer 6. The cold cathode emits electrons from the surface of a emitter 3b when voltages are applied on the emitter 3b and on the gate electrode layer 6 respectively. The gate insulating layer (9) consists of multiple insulating-layer 9 laminated in order with more than two layers.
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Patent Agency Ranking
公开(公告)号：JP2002157953A
公开(公告)日：2002-05-31
申请号：JP2000352983
申请日：2000-11-20
Applicant: NEC CORP
Inventor： OKAMOTO AKIHIKO , KONUMA KAZUO , TOMIHARI YOSHINORI , ITO FUMINORI , OKADA HIROKO
Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method of an emitter capable of obtaining an excellent emission characteristic by generating a uniform and stable emission current while using a CNT film. SOLUTION: In this manufacturing method of the emitter, the CNT film 12 including plural carbon nanotubes(CNT) 12a and constituting an emitter electrode 12b is formed on a glass substrate 10, a gate electrode 16 is formed on the CNT film 12 via an insulating film 13, plural gate openings 17 are formed in the gate electrode 16 and the insulating film 13, and the CNT 12a in the gate openings 17 is oriented upright.
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公开(公告)号：JPH07201273A
公开(公告)日：1995-08-04
申请号：JP33742893
申请日：1993-12-28
Applicant: NEC CORP , KANSAI NIPPON ELECTRIC
Inventor： IMURA HIRONORI , MAKISHIMA HIDEO , TOMIHARI YOSHINORI
Abstract: PURPOSE:To omit wire bonding for power supply to the gate electrode of a field emission cold cathode and make a cathode structure furnished with the field emission cold cathode smaller, design-free, environment-resistant and reliable. CONSTITUTION:Drawing electrodes 6, 8 for a gate electrode 3 is provided on the back of a substrate 1 furnished with a field emission cold cathode to supply cathode operating power from the back of the substrate. The drawing electrodes 6, 8 provided on the back is conducted to the gate electrode 3 through a conductor 7 formed in a contact hole 5 made through the substrate and insulated from the substrate 1. The contact hole 5 is in an angularly conical shape and the conductor 7 insulated by an insulating layer 2 formed with thin film formation is formed on the contact hole 5 in the process of conductive thin film formation.
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公开(公告)号：JPH0636681A
公开(公告)日：1994-02-10
申请号：JP18484392
申请日：1992-07-13
Applicant: NEC CORP
Inventor： MAKISHIMA HIDEO , TOMIHARI YOSHINORI
Abstract: PURPOSE:To provide an electron gun which is stable, of high reliability, and has a low power consumption rate and high current density for an electron beam. CONSTITUTION:A cold cathode 1 uses a cold cathode chip 5 derived from vacuum microelectronics technique and has a structure in which the end of an emitter 10 from which electrons are emitted is projected beyond the gate electrode 9 of the cold cathode chip 5. A G1 electrode 2 for applying either a positive or negative voltage to the emitter 10 of the cold cathode chip 5 and a G2 electrode 3 for applying a positive voltage to the emitter 10 are provided.
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公开(公告)号：JPH05121010A
公开(公告)日：1993-05-18
申请号：JP28531191
申请日：1991-10-31
Applicant: NEC CORP
Inventor： TOMIHARI YOSHINORI
Abstract: PURPOSE:To obtain a focusing characteristic excellent in the whole screen uniformly. CONSTITUTION:In a focusing electrode system consisting of three lattice electrodes, a first lattice electrode 14 and a third lattice electrode 16 are provided with a round electron beam passing hole each, and a second lattice electrode 5 is provided with a non-rotary symmetric electron beam passing hole while the second lattice electrode 15 is made applicable of prescribed focusing voltage and the first and third lattice electrodes 14, 16 are made applicable of dynamic voltage synchronized with deflection cycle. In an inline type color picture tube according to a self-covergence deflection system, a form of an electron beam is remarkably distorted around a picture due to its distorted deflection magnetic field. However, three lattice electrode generate a quadrupolelens allowing to change its intensity corresponding to a deflection angle and to cancel distortion of the electron beam due to a deflection magnetic field.
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20.发明专利Cnt film, method for producing the same, field emission type cold cathode using cnt film, and image display 审中-公开CNT膜，其制造方法，使用CNT膜的场发射型冷阴极和图像显示
公开(公告)号：JP2011157270A
公开(公告)日：2011-08-18
申请号：JP2011097693
申请日：2011-04-25
Inventor： KONUMA KAZUO , ITO FUMINORI , OKAMOTO AKIHIKO , TOMIHARI YOSHINORI , OKADA HIROKO
Abstract: PROBLEM TO BE SOLVED: To provide a CNT film which can ensure mechanical film strength without depending on only an organic binder, easily achieves a flat shape, does not include bubbles therein, eliminates such a complicated CNT refining step as to needlessly remove impurities except nanotubes, and can suppress deterioration of electron emission characteristic due to bundle diameter increase. SOLUTION: The CNT film 12 comprises carbon nanotubes (CNT) and particulate impurities, wherein the area ratio between CNT 12a and particulate impurities in cross section and surface structures is set in a range of 0.5:99.5 to 40:60. In the CNT film 12, the particulate impurities can be composed of impurities obtained together with the CNT 12a when the CNT 12a is produced. COPYRIGHT: (C)2011,JPO&INPIT
Abstract translation: 要解决的问题：为了提供可以确保机械膜强度而不依赖于有机粘合剂的CNT膜，容易达到平坦形状，不包括气泡，消除了这种复杂的CNT精制步骤，以便不必要地除去 除了纳米管之外的杂质，并且可以抑制由于束直径增加引起的电子发射特性的劣化 解决方案：CNT膜12包括碳纳米管（CNT）和颗粒杂质，其中CNT 12a和颗粒杂质在横截面和表面结构中的面积比设定在0.5:99.5至40:60的范围内。 在CNT膜12中，当制造CNT 12a时，颗粒杂质可以由与CNT 12a一起获得的杂质构成。 版权所有（C）2011，JPO＆INPIT
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