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    Light emitting diode chip having radiation transparent and electric current extension layer
    13.
    发明专利
    Light emitting diode chip having radiation transparent and electric current extension layer 审中-公开
    具有辐射透明和电流扩展层的发光二极管芯片

    公开(公告)号：JP2004214685A

    公开(公告)日：2004-07-29

    申请号：JP2004000661

    申请日：2004-01-05

    Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

    Inventor： ALBRECHT TONY ,  STEIN WILHELM ,  WIRTH RALPH

    IPC: H01L33/14 ,  H01L33/42 ,  H01L33/00

    CPC classification number: H01L33/42 ,  H01L33/14

    Abstract: PROBLEM TO BE SOLVED: To provide a light emitting diode chip having an epitaxial semiconductor layer row equipped with an activity layer which emits electromagnetic radiation, and an electric contact structure which contains a radiation transparent and electric current extension layer comprising ZnO, and an electric connection layer, in which the loss by absorption in an electric connection region is reduced. SOLUTION: The current extension layer has a window where the connection layer is deposited on a covering layer of the semiconductor layer row. The connection layer is connected electrically with the current extension layer. The joint part of the connection layer and the covering layer is not connected electrically or is in bad conductive connection status during operation of the light emitting diode chip. All currents or almost all currents flow in the semiconductor layer row through the current extension layer. COPYRIGHT: (C)2004,JPO&NCIPI

    Abstract translation: 要解决的问题：提供一种具有外延半导体层行的发光二极管芯片，其具有发射电磁辐射的活性层，以及含有包含ZnO的辐射透明和电流延伸层的电接触结构，以及 电连接层中的电连接区域的吸收损失减小的电连接层。 解决方案：当前的延伸层具有连接层沉积在半导体层行的覆盖层上的窗口。 连接层与电流延伸层电连接。 连接层和覆盖层的接合部分在发光二极管芯片的操作期间没有电连接或者导电连接状态不良。 所有电流或几乎所有电流在半导体层行中流过电流延伸层。 版权所有（C）2004，JPO＆NCIPI

    Radiation emission element
    14.
    发明专利
    Radiation emission element 审中-公开
    辐射排放元素

    公开(公告)号：JP2008047906A

    公开(公告)日：2008-02-28

    申请号：JP2007209632

    申请日：2007-08-10

    Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

    Inventor： EBERHARD FRANZ ,  GROETSCH STEFAN ,  LINDER NORBERT ,  MOOSBURGER JUERGEN ,  STREUBEL KLAUS ,  WIRTH RALPH ,  SABATHIL MATTHIAS ,  MUSCHAWECK JULIUS ,  BERGENEK KRISTER

    IPC: H01L33/44 ,  H01L33/46 ,  H01L33/58

    CPC classification number: H01L33/44 ,  G02F1/13362 ,  H01L33/46 ,  H01L33/58

    Abstract: PROBLEM TO BE SOLVED: To provide a radiation emission element which can actualize relatively high luminance in a desired spatial direction, in a desired polarization direction or at a desired wavelength. SOLUTION: The radiation emission element according to the present invention is based on a semiconductor material and comprises a layer stack having an active layer sequence for producing a radiation emission element and a filter element placed at a rear side of the active layer sequence as seen from a radiation direction, and is configured in such a manner that the filter element emits a first emission component and reflects a second emission component within the layer stack, the second reflection component, after being reflected at the filter element, is subjected to deflection process or absorption emission process, and the radiation deflected or emitted is supposed to come into the filter element again. COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种可以在期望的空间方向上，在期望的偏振方向或期望的波长上实现相对高的亮度的辐射发射元件。 解决方案：根据本发明的辐射发射元件基于半导体材料并且包括具有用于产生辐射发射元件的有源层序列和放置在有源层序列的后侧的滤波器元件的层堆叠 从辐射方向看，并且被配置为使得过滤元件发射第一发射分量并且反射层堆内的第二发射分量，第二反射分量在被滤波元件反射之后经受 偏转过程或吸收发射过程，并且偏转或发射的辐射应该再次进入过滤元件。 版权所有（C）2008，JPO＆INPIT

    Radiant emission semiconductor chip and manufacturing method of semiconductor substrate to semiconductor chip of the type
    15.
    发明专利
    Radiant emission semiconductor chip and manufacturing method of semiconductor substrate to semiconductor chip of the type 审中-公开
    半导体衬底的辐射发射半导体芯片和制造方法类型的半导体芯片

    公开(公告)号：JP2006287223A

    公开(公告)日：2006-10-19

    申请号：JP2006093030

    申请日：2006-03-30

    Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

    Inventor： WIRTH RALPH

    IPC: H01L33/10 ,  H01L33/38 ,  H01L33/46

    CPC classification number: H01L33/38 ,  H01L33/105 ,  H01L33/465 ,  H01L2933/0016

    Abstract: PROBLEM TO BE SOLVED: To easily and economically manufacture a semiconductor substrate having a semiconductor layer row provided with active zones suitable for a lateral principal extending direction, a principal surface, and the generation of radiation, and a radiant emission semiconductor chip provided with an electrical connection element disposed on the principal surface that can be pulse-operated in a reduced modulation time. SOLUTION: The principal surface has an injection region 7 and an isolation region 8, the injection region is conductively connected to a connection element, A carrier is injected into a semiconductor substrate through the injection region only while the semiconductor chip is in operation relative to the isolation region and the injection region, and the connection element is overlapped on the injection region or the isolation region, or is disposed adjacent to the injection region in a lateral direction. COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题：为了容易且经济地制造具有半导体层行的半导体衬底，该半导体层行设置有适合于横向主延伸方向，主表面和辐射的产生的有源区和提供的辐射发射半导体芯片 其中设置在主表面上的电连接元件可以在减少的调制时间内被脉冲操作。 解决方案：主表面具有注入区域7和隔离区域8，注入区域与连接元件导电连接，仅在半导体芯片处于工作状态时，通过注入区域将载流子注入半导体衬底 相对于隔离区域和注入区域，并且连接元件重叠在注入区域或隔离区域上，或者在横向方向上与喷射区域相邻地设置。 版权所有（C）2007，JPO＆INPIT

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    18.
    发明专利
    SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开

    公开(公告)号：JP2003197959A

    公开(公告)日：2003-07-11

    申请号：JP2002366153

    申请日：2002-12-18

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

    Inventor： WIRTH RALPH

    IPC: H01L33/20 ,  H01L33/38 ,  H01L33/00

    Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device which is reduced in light absorption and improved in luminous efficiency. SOLUTION: A semiconductor light emitting device is equipped with a thin film laminate (12) which is provided with regions (40) which emit photons into active layers (22) and a front surface (16), and a rear surface (14) and connectors (26) and (32) formed on the front and rear of the thin film laminate (12) respectively so as to feed a current into the active layers (22). The regions (40) emitting photons are arranged as they are spatially separated from the connectors (26) and (32). By this setup, radiation absorbed by the connectors (26) and (32) can be reduced to an irreducible minimum. COPYRIGHT: (C)2003,JPO

    LIGHT EMITTING SEMICONDUCTOR DEVICE
    19.
    发明专利
    LIGHT EMITTING SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：JP2004006906A

    公开(公告)日：2004-01-08

    申请号：JP2003156663

    申请日：2003-06-02

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

    Inventor： WIRTH RALPH

    IPC: H01L33/08 ,  H01L33/22 ,  H01L33/00

    Abstract: PROBLEM TO BE SOLVED: To improve external effects of a semiconductor device by further reducing the absorption of light. SOLUTION: A thin film staple includes a light generation region and a light output coupling region. Photons are generated by recombination of charge carriers in the light generation region. In the light output coupling region, the light is coupled and then outputted from the semiconductor device. In this case, the light generation region and the light output coupling region are at least partially separated from each other on the surface of the thin film staple. COPYRIGHT: (C)2004,JPO

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