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公开(公告)号：KR20180072874A
公开(公告)日：2018-06-29
申请号：KR20187017728
申请日：2010-07-19
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： WEIDNER KARL , WIRTH RALPH , KALTENBACHER AXEL , WEGLEITER WALTER , BARCHMANN BERND , WUTZ OLIVER , MARFELD JAN
IPC: H01L31/0232 , H01L33/48 , H01L33/54 , H01L33/60 , H01L33/62
CPC classification number: H01L33/0079 , H01L23/3107 , H01L23/3185 , H01L25/042 , H01L25/0753 , H01L31/02005 , H01L31/0203 , H01L31/0232 , H01L31/02322 , H01L31/02327 , H01L31/1892 , H01L33/483 , H01L33/486 , H01L33/502 , H01L33/54 , H01L33/56 , H01L33/60 , H01L33/62 , H01L2924/0002 , H01L2933/0033 , H01L2933/005 , H01L2933/0066 , H01L2924/00
Abstract: 본발명은광전자반도체소자를제조하기위한방법에관한것이며, 상기방법은하기의단계들을포함한다: 캐리어(1)를제공하는단계, 적어도하나의광전자반도체칩(2)을상기캐리어(1)의상부면(1a)에배치하는단계, 상기적어도하나의광전자반도체칩(2)을성형바디(3)에의하여변형하는단계 - 상기성형바디(3)는상기적어도하나의광전자반도체칩(2)의모든측면들(2c)을덮고, 상기캐리어(1)로부터떨어져서마주하는표면은상기적어도하나의반도체칩(2)의상부면(2a)에서또는상기캐리어쪽을향하는캐리어의표면은상기적어도하나의반도체칩(2)의하부면(2b)에서성형바디(3)를갖지않거나또는노출되어있음 -, 상기캐리어(1)를제거하는단계.
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2.发明专利Photoelectric semiconductor chip and method of realizing contact structure for forming electrical contact of the photoelectric semiconductor chip 审中-公开光电半导体芯片的实现接触结构的形成方法和形成光电半导体芯片的电接触的方法
公开(公告)号：JP2005317981A
公开(公告)日：2005-11-10
申请号：JP2005134454
申请日：2005-05-02
Applicant: Osram Opto Semiconductors Gmbh , オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH
Inventor： WIRTH RALPH
IPC: H01L23/525 , H01L31/10 , H01L33/30 , H01L33/62 , H01L33/00
CPC classification number: H01L33/62 , H01L27/156 , H01L33/30 , H01L2924/0002 , H01L2924/00
Abstract: PROBLEM TO BE SOLVED: To provide an photoelectric semiconductor chip whose active surface can be easily expanded, as compared with the conventional optical semiconductor chips. SOLUTION: The photoelectric semiconductor chip includes many semiconductor functional regions 10, arranged in common holding layers 1 and 7 and a contact structure 18 for forming electrical contact of a photoelectric semiconductor chip, wherein at least one of the semiconductor functional regions is a defective region 12; a contact structure has a conductive connection with at least one of the semiconductor functional regions; and the contact structure is realized, such that it is electrically separable/separated from the defective region. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract translation: 要解决的问题：与传统的光学半导体芯片相比，提供其活性表面可以容易地扩展的光电半导体芯片。 解决方案：光电半导体芯片包括布置在公共保持层1和7中的许多半导体功能区域10和用于形成光电半导体芯片的电接触的接触结构18，其中半导体功能区域中的至少一个为 缺陷区域12; 接触结构与半导体功能区域中的至少一个具有导电连接; 并且实现了接触结构，使得其与缺陷区电气分离/分离。 版权所有（C）2006，JPO＆NCIPI
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3.发明专利
公开(公告)号：JP2011044754A
公开(公告)日：2011-03-03
申请号：JP2010270445
申请日：2010-12-03
Applicant: Osram Opto Semiconductors Gmbh , オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH
Inventor： ZOELFL MICHAEL , STEIN WILHELM , WIRTH RALPH
CPC classification number: H01L33/38 , H01L33/145 , H01L33/387
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor chip structure allowing radiation emission to be adjusted and set in a target region during a manufacturing period.
SOLUTION: The brightness of this radiation-emitting semiconductor chip is adjusted and set by putting one or more absorptive and/or partially-insulating brightness-adjusting/setting layers (12, 6, 9) on a radiation output-combining surface (10) of a wafer during a manufacturing period of the semiconductor chip after measurement of radiation-emission characteristics of a radiation-emitting semiconductor layer column (3) of the wafer.
COPYRIGHT: (C)2011,JPO&INPITAbstract translation: 要解决的问题：提供在制造期间允许辐射发射被调整和设定在目标区域中的半导体芯片结构。 解决方案：通过将一个或多个吸收和/或部分绝缘的亮度调节/设定层（12,6,9）放置在辐射输出组合表面上来调节和设置该发射辐射的半导体芯片的亮度 （10）在晶片的辐射发射半导体层柱（3）的辐射发射特性的测量之后的半导体芯片的制造周期期间。 版权所有（C）2011，JPO＆INPIT
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公开(公告)号：JP2007096327A
公开(公告)日：2007-04-12
申请号：JP2006267454
申请日：2006-09-29
Applicant: Osram Opto Semiconductors Gmbh , オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH
Inventor： WIRTH RALPH
IPC: H01L33/10
CPC classification number: H01L33/10 , H01L33/405 , H01L33/46 , H01L2924/0002 , H01L2924/00
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor chip that can be manufactured efficiently and easily in terms of output coupling. SOLUTION: A semiconductor chip has a thin film semiconductor and emits a beam. The thin film semiconductor comprises an array of semiconductor layers having an active region suitable for beam formation, and a mirror layer provided thereon. The semiconductor chip has a Bragg mirror provided in addition to the mirror layer. The Bragg mirror and the mirror layer are provided on the same side of the active region. COPYRIGHT: (C)2007,JPO&INPIT
Abstract translation: 要解决的问题：提供可以在输出耦合方面有效且容易地制造的半导体芯片。 解决方案：半导体芯片具有薄膜半导体并发射光束。 薄膜半导体包括具有适于波束形成的有源区的半导体层的阵列，以及设置在其上的镜像层。 除了镜面层之外，半导体芯片还具有布拉格反射镜。 布拉格反射镜和镜面层设置在有源区域的同一侧。 版权所有（C）2007，JPO＆INPIT
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公开(公告)号：JP2007027728A
公开(公告)日：2007-02-01
申请号：JP2006190740
申请日：2006-07-11
Applicant: Osram Opto Semiconductors Gmbh , オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH
Inventor： WIRTH RALPH , STREUBEL KLAUS
CPC classification number: H01L33/20 , H01L33/0079 , H01L33/14 , H01L33/46 , H01L2924/0002 , H01L2924/00
Abstract: PROBLEM TO BE SOLVED: To provide an opto-electronic chip having extra-high irradiating output coupling efficiency, and to provide the opto-electronic chip in which the proportion of output coupling to a specific spacial angle region out of generated electromagnetic radiation is especially large. SOLUTION: The opto-electronic chip is provided with a semiconductor body having a radiating/emitting region and a partial region in which the surface of the semiconductor body is curved toward a carrier. The length of the lateral direction of the radiating/emitting region is shorter than the length of the lateral direction of the partial region. The problem is solved by providing the opto-electronic chip. COPYRIGHT: (C)2007,JPO&INPIT
Abstract translation: 要解决的问题：提供具有超高照射输出耦合效率的光电芯片，并提供光电芯片，其中输出耦合到特定空间角区域的比例在产生的电磁辐射之外 特别大。 解决方案：光电芯片设置有具有辐射/发射区域和半导体主体的表面朝向载体弯曲的部分区域的半导体本体。 辐射/发射区域的横向长度比部分区域的横向长度短。 通过提供光电芯片来解决问题。 版权所有（C）2007，JPO＆INPIT
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Patent Agency Ranking
公开(公告)号：JP2012099866A
公开(公告)日：2012-05-24
申请号：JP2012034226
申请日：2012-02-20
Applicant: Osram Opto Semiconductors Gmbh , オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH
Inventor： WINDISCH REINER , WIRTH RALPH , WEGLEITER WALTER
CPC classification number: H01L33/20 , H01L33/387
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor chip capable of obtaining improved beam emission efficiency, that is, improved beam strength per employed electric power output unit.SOLUTION: A trench defines, on a reverse side of a thin-film layer, only a single partial region. The partial region substantially does not overlap with front-surface contact structure. On the reverse side, an electrical reverse-side contact is formed only in the partial region and the trench has inner walls, slanted with respect to a principal elongation surface of the thin-film layer for deflecting an electromagnetic beam.
Abstract translation: 要解决的问题：提供一种能够获得改善的光束发射效率的半导体芯片，即，每个所采用的电力输出单元的光束强度提高。 解决方案：沟槽在薄膜层的相反侧限定仅一个部分区域。 部分区域基本上不与前表面接触结构重叠。 在相反的一侧，电反向侧接触只形成在部分区域中，并且沟槽具有内壁，相对于薄膜层的主延长表面倾斜以偏转电磁束。 版权所有（C）2012，JPO＆INPIT
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公开(公告)号：JP2008085337A
公开(公告)日：2008-04-10
申请号：JP2007249238
申请日：2007-09-26
Applicant: Osram Opto Semiconductors Gmbh , オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH
Inventor： WIRTH RALPH
CPC classification number: H01L33/145 , H01L33/405 , H01L33/42 , H01L2924/0002 , H01L2924/00
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor body which is suitable for beam radiation and can be formed with high efficiency in a simplified manner. SOLUTION: A semiconductor layer sequence comprises two contact layers, and between which an active region is arranged. The contact layers are assigned with a respective terminal layer arranged on a semiconductor body. The respective terminal layers are conductively connected to the assigned terminal layers, and arranged on the opposite side of the active region of the assigned contact layers, and are transmissive to the beam to be generated in the active region. The contact layers are of the same conduction type. COPYRIGHT: (C)2008,JPO&INPIT
Abstract translation: 要解决的问题：提供一种适合于光束辐射的半导体本体，并且能够以简单的方式高效率地形成。 解决方案：半导体层序列包括两个接触层，并且其间布置有源区。 接触层被分配有布置在半导体主体上的相应端子层。 各个端子层导电地连接到所分配的端子层，并且被布置在所分配的接触层的有源区域的相对侧上，并且对于在有源区域中要产生的光束是透射的。 接触层具有相同的导电类型。 版权所有（C）2008，JPO＆INPIT
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8.发明专利
公开(公告)号：JP2007189242A
公开(公告)日：2007-07-26
申请号：JP2007061973
申请日：2007-03-12
Applicant: Osram Opto Semiconductors Gmbh , オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH
Inventor： ILLEK STEFAN , PLOESSL ANDREAS , STREUBEL KLAUS , WEGLEITER WALTER , WIRTH RALPH
CPC classification number: H01L33/20 , H01L33/0079 , H01L33/08 , H01L33/10 , H01L33/30 , H01L33/405 , H01L2924/0002 , H01L2924/00
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor chip with improved optical output which can be manufactured by a thin-film technique, and a method for manufacturing it. SOLUTION: A thin-film active layer is processed into a plurality of mesa shapes, and an isolation layer and a metalized layer having reflexivity are formed over the surface of the mesa. Further, the thin-film active layer is mounted on another supporting substrate, and the thin-film active layer is separated from a growth substrate. By reflexing the light generated from an active zone in the thin-film active layer by the isolation layer and the metalized layer formed on the surface of the mesa, luminous efficiency is improved. COPYRIGHT: (C)2007,JPO&INPIT
Abstract translation: 要解决的问题：提供可以通过薄膜技术制造的具有改进的光输出的半导体芯片及其制造方法。 解决方案：将薄膜活性层加工成多个台面形状，并且在台面的表面上形成具有反射性的隔离层和金属化层。 此外，薄膜有源层安装在另一个支撑基板上，并且薄膜有源层与生长基板分离。 通过隔离层和形成在台面表面上的金属化层反射薄膜有源层中的有源区产生的光，发光效率提高。 版权所有（C）2007，JPO＆INPIT
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公开(公告)号：JP2011049600A
公开(公告)日：2011-03-10
申请号：JP2010270229
申请日：2010-12-03
Applicant: Osram Opto Semiconductors Gmbh , オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH
Inventor： WIRTH RALPH , BRUNNER HERBERT , ILLEK STEFAN , EISSLER DIETER
IPC: H01L33/02 , H01L31/0224 , H01L31/10 , H01L33/38
CPC classification number: H01L31/022408 , H01L31/022416 , H01L33/0079 , H01L33/0095 , H01L33/382 , H01L2224/16225
Abstract: PROBLEM TO BE SOLVED: To provide a photoelectric element, a device having a number of the photoelectric elements which can be easily manufactured at a low cost, and an easy manufacturing method of the photoelectric element. SOLUTION: A photoelectric element 1 comprises an active zone and a semiconductor functional region 2 having a main extension direction in a lateral direction. The semiconductor functional region has at least one hole passing through the active zone, and a connection conductor material is disposed in a region of the hole. The connection conductor material is electrically insulated from the active zone at least in a partial region of the hole. COPYRIGHT: (C)2011,JPO&INPIT
Abstract translation: 要解决的问题：为了提供一种光电元件，具有可以容易地以低成本制造的多个光电元件的装置和光电元件的容易的制造方法。 解决方案：光电元件1包括有源区和在横向上具有主延伸方向的半导体功能区2。 半导体功能区域具有通过有源区域的至少一个孔，并且连接导体材料设置在孔的区域中。 连接导体材料至少在孔的部分区域中与活性区电绝缘。 版权所有（C）2011，JPO＆INPIT
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公开(公告)号：JP2006157024A
公开(公告)日：2006-06-15
申请号：JP2005346116
申请日：2005-11-30
Applicant: Osram Opto Semiconductors Gmbh , オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH
Inventor： WOLFGANG SCHMIDT , WIRTH RALPH , STREUBEL KLAUS
CPC classification number: H01L33/105 , B82Y20/00 , H01L33/405 , H01L33/465 , H01L2924/0002 , H01S5/0217 , H01S5/0425 , H01S5/18308 , H01S5/18375 , H01S5/34326 , H01L2924/00
Abstract: PROBLEM TO BE SOLVED: To provide an improved light emission semiconductor element which is remarkably small-sized, and can be constituted so as to have a high efficiency. SOLUTION: A first mirror 7 includes a metal layer 4 and an intermediate layer 3 disposed on the opposite side to an active region 2 side of the metal layer and composed of a beam-transmissive and electrically conductive material. The light emission semiconductor element is provided to operate using an optical resonator as an RCLED (Resonant Cavity Light Emitting Diode) and to form a non-coherent beam, or is provided to operate using an external optical resonator as a VECSEL (Vertical External Cavity Surface Emitting Laser) and to form a coherent beam. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract translation: 要解决的问题：提供一种非常小尺寸的改进的发光半导体元件，并且可以被构造成具有高效率。 解决方案：第一反射镜7包括金属层4和中间层3，该金属层4和中间层3设置在与金属层的有源区2侧相反的一侧，并由透射和导电材料构成。 发光半导体元件设置为使用光学谐振器作为RCLED（谐振腔发光二极管）进行操作并形成非相干光束，或者被提供以使用外部光学谐振器作为VECSEL（垂直外部空腔表面 发射激光）并形成相干光束。 版权所有（C）2006，JPO＆NCIPI
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