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    VIBRATION SENSOR AND METHOD FOR MANUFACTURING THE VIBRATION SENSOR
    13.
    发明授权
    VIBRATION SENSOR AND METHOD FOR MANUFACTURING THE VIBRATION SENSOR 有权

    公开(公告)号：EP2073272B1

    公开(公告)日：2018-09-12

    申请号：EP07791105.5

    申请日：2007-07-20

    Applicant: Omron Corporation

    Inventor： KASAI, Takashi ,  HORIMOTO, Yasuhiro ,  KATO, Fumihito ,  MUNECHIKA, Masaki ,  WAKABAYASHI, Shuichi ,  TAKAHASHI, Toshiyuki ,  INUGA, Masayuki

    IPC: B81C1/00 ,  H04R19/04

    CPC classification number: B81C1/00182 ,  B81B2201/0257 ,  B81B2201/0285 ,  B81B2203/0127 ,  B81B2203/0353 ,  H04R19/005 ,  H04R19/04

    Abstract: A protective film (20) of an SiO2 thin film is formed on a front surface of an Si substrate (12), and a part of the protective film (20) is removed to form an etching window (22). A sacrifice layer (23) of polycrystalline Si is formed in the etching window (22). A protective film (24) of SiO2 is formed on the front surface of the Si substrate (12) from the top of the sacrifice layer (23), and a thin film (13) as an element formed of polycrystalline Si is further formed on the protective film (24). A backside etching window (26) is opened in a protective film (21) on the back side of the Si substrate (12). The Si substrate (12) is soaked in TMAH to perform crystal anisotropic etching in the Si substrate (12) through the backside etching window (26) to provide a through-hole (14) in the Si substrate (12).; When the sacrifice layer (23) is exposed to the interior of the through-hole (14), the sacrifice layer (23) is etching-removed to provide a gap (19) between the protective film (24) and the Si substrate (12) and crystal anisotropic etching of the Si substrate (12) is carried out from its front side and backside.

    ACOUSTIC SENSOR AND MICROPHONE
    16.
    发明公开
    ACOUSTIC SENSOR AND MICROPHONE 有权
    阿拉斯加基斯先生在MIKROPHON

    公开(公告)号：EP2519030A1

    公开(公告)日：2012-10-31

    申请号：EP11770990.7

    申请日：2011-03-16

    Applicant: Omron Corporation

    Inventor： KASAI, Takashi

    IPC: H04R19/04

    CPC classification number: H04R19/005 ,  H01L2224/48137 ,  H01L2924/15151 ,  H01L2924/16152 ,  H04R1/04 ,  H04R7/06 ,  H04R19/04 ,  H04R2410/03

    Abstract: Provided is an acoustic sensor capable of improving an S/N ratio of a sensor without preventing reduction in size of the sensor. A back chamber 45 is vertically opened in a silicon substrate 42. A thin film-like diaphragm 43 to serve as a movable electrode plate is formed on the top surface of the substrate 42 so as to cover the back chamber 45. The back plate 48 is fixed to the top surface of the substrate 42 so as to cover the diaphragm 43, and a fixed electrode plate 49 is provided on the under surface of the back plate 48. Further, the diaphragm 43 is divided into a plurality of areas by the slit 47, and the respective plurally divided diaphragms 43a, 43b and the fixed electrode plate 49 constitute a plurality of parallelly connected capacitors (acoustic sensing sections 60a, 60b).

    Abstract translation: 提供了能够在不防止传感器的尺寸减小的情况下提高传感器的S / N比的声学传感器。 后室45在硅衬底42中垂直打开。用作可动电极板的薄膜状隔膜43形成在衬底42的顶表面上以覆盖后室45.背板48 被固定在基板42的上表面上以覆盖隔膜43，并且在背板48的下表面上设置固定电极板49.此外，隔膜43被分隔成多个区域 狭缝47和多个分开的隔膜43a，43b和固定电极板49构成多个平行连接的电容器（声感测部60a，60b）。

    CAPACITANCE TYPE VIBRATION SENSOR
    17.
    发明公开
    CAPACITANCE TYPE VIBRATION SENSOR 审中-公开
    电容式振动传感器

    公开(公告)号：EP2315457A1

    公开(公告)日：2011-04-27

    申请号：EP09800160.5

    申请日：2009-02-19

    Applicant: Omron Corporation

    Inventor： KASAI, Takashi ,  TSURUKAME, Yoshitaka

    IPC: H04R19/04

    CPC classification number: H04R19/04 ,  H04R19/005 ,  H04R31/006

    Abstract: A vibration electrode plate (34), which performs film vibration upon receiving vibration, is arranged on an upper surface of a silicon substrate (32) including a hollow portion (37). A fixed electrode plate (36) in which a plurality of acoustic perforations (43) passing therethrough in the thickness direction is opened is arranged on an upper side of the vibration electrode plate (34), and the vibration electrode plate (34) and the fixed electrode plate (36) are faced to each other. A vent hole (45) for communicating an air gap (35), which is between the vibration electrode plate (34) and the fixed electrode plate (36), to the hollow portion (37) is arranged between the upper surface of the silicon substrate (32) and the lower surface of the vibration electrode plate (34) at the periphery of the hollow portion (37). An air escape portion (42) in the form of a plurality of through-holes is opened in the vibration electrode plate (34) in the region corresponding to the vent hole (45).

    Abstract translation: 在包括中空部（37）的硅基板（32）的上表面配置有振动电极板（34），该振动电极板在受到振动时进行膜振动。 在振动电极板（34）的上侧配置有固定电极板（36），在该固定电极板（36）中，厚度方向上贯通的多个声音孔（43）开口，并且振动电极板（34）和 固定电极板（36）彼此面对。 用于将位于振动电极板（34）和固定电极板（36）之间的气隙（35）与中空部分（37）连通的通气孔（45）布置在硅的上表面 基板32和振动电极板34的中空部37周围的下表面。 多个通孔形式的排气部分（42）在对应于通气孔（45）的区域中在振动电极板（34）中开口。

    CAPACITIVE VIBRATION SENSOR
    19.
    发明公开
    CAPACITIVE VIBRATION SENSOR 有权
    KAPAZITIVER VIBRATIONSSENSOR

    公开(公告)号：EP2328361A1

    公开(公告)日：2011-06-01

    申请号：EP09809435.2

    申请日：2009-02-20

    Applicant: Omron Corporation

    Inventor： KASAI, Takashi ,  IIDA, Nobuyuki ,  NISHIO, Hidetoshi

    IPC: H04R19/04

    CPC classification number: H04R19/005 ,  B81B3/007 ,  B81B2201/0257 ,  B81B2203/0307 ,  H04R19/04 ,  H04R31/00

    Abstract: A hollow part (36) such as a through-hole is formed in a silicon substrate (32) so as to pass through the front and the back thereof. A vibration electrode plate (34) is arranged on an upper surface of the silicon substrate (32) to cover the opening on the upper surface side of the hollow part (36). A fixed electrode plate (35) covers the upper side of the vibration electrode plate (34) while maintaining a microscopic gap with the vibration electrode plate (34), where the peripheral part is fixed to the upper surface of the silicon substrate (32). The fixed electrode plate (35) has the portion facing the upper surface of the silicon substrate (32) through a space supported by a side wall portions arranged on an inner edge of the portion fixed to the upper surface of the silicon substrate (32) without interposing a space, and the outer surface of the side wall portion of the fixed electrode plate (35) is covered by a reinforcement film (44) made of metal such as Au, Cr, and Pt.

    Abstract translation: 在硅衬底（32）中形成诸如通孔的中空部分（36），以穿过其前后。 在硅基板（32）的上表面配置有振动电极板（34），以覆盖中空部（36）的上表面侧的开口部。 固定电极板（35）覆盖振动电极板（34）的上侧，同时保持与振动电极板（34）的微小间隙，其中周边部分固定到硅衬底（32）的上表面， 。 固定电极板（35）具有通过由固定在硅衬底（32）的上表面的部分的内边缘上的侧壁部分支撑的空间而与硅衬底（32）的上表面相对的部分， 而不插入空间，并且固定电极板（35）的侧壁部分的外表面被由诸如Au，Cr和Pt的金属制成的增强膜（44）覆盖。

    ELECTROSTATIC CAPACITIVE VIBRATING SENSOR
    20.
    发明公开
    ELECTROSTATIC CAPACITIVE VIBRATING SENSOR 有权
    ELEKTROSTATISCHER UND KAPAZITIVER VIBRATIONSSENDOR

    公开(公告)号：EP2182738A1

    公开(公告)日：2010-05-05

    申请号：EP09712468.9

    申请日：2009-02-18

    Applicant: Omron Corporation

    Inventor： KASAI, Takashi ,  ONO, Kazuyuki ,  TSURUKAME, Yoshitaka

    IPC: H04R19/04

    CPC classification number: H04R19/005 ,  H04R2201/003

    Abstract: Provided is an electrostatic capacitive vibrating sensor in which a vibrating electrode plate 34 is formed on the top surface of a silicon substrate 32 having through-holes 37 penetrating from the front surface to the rear surface thereof to cover the through-holes 37, and in which a fixed electrode plate 36 is formed above the vibrating electrode plate 34 and sandwiches an air gap 35 therebetween. Acoustic holes 43b are provided on the outer periphery of the region in the fixed electrode plate 36 opposite to the vibrating electrode plate 34 and have aperture areas smaller than the aperture areas of the acoustic holes 43a provided in the region except for the outer periphery. The acoustic holes 43a, 43b are arranged regularly at constant pitches regardless of the sizes of the aperture areas.

    Abstract translation: 提供一种静电电容振动传感器，其中在硅基板32的顶表面上形成振动电极板34，该硅基板32具有从其前表面到后表面穿透的通孔37以覆盖通孔37，并且 固定电极板36形成在振动电极板34的上方，并夹着气隙35。 在固定电极板36的与振动电极板34相对的区域的外周设置有声孔43b，其开口面积小于除了外周以外的区域设置的声孔43a的开口面积。 声孔43a，43b规则地以恒定的间距布置，而不管开口面积的大小如何。

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