公开(公告)号：BR6457999D0

公开(公告)日：1973-06-14

申请号：BR15799964

申请日：1964-03-31

Applicant: RCA CORP

Inventor： CARLSON D ,  THERIAULT G

IPC: D06B23/10 ,  H01L27/088 ,  H01L29/00 ,  H03B5/24 ,  H03D7/12 ,  H03F1/26 ,  H03F3/191 ,  H03F3/193 ,  H03G1/00 ,  H03G3/30

Abstract: 1,060,242. Field-effect transistor amplifier circuits. RADIO CORPORATION OF AMERICA. March 20, 1964 [April 1, 1963], No. 11953/64. Heading H3T. [Also in Division H1] Two insulated-gate field-effect transistors (see Division H1) 90, 92 are connected in a cascade amplifier circuit as shown, with their semi-conductor substrates 126, 132 earthed. A circuit using a single such transistor also is given, Fig. 5 (not shown).

公开(公告)号：SE318628B

公开(公告)日：1969-12-15

申请号：SE478364

申请日：1964-04-17

Applicant: RCA CORP

Inventor： THERIAULT G

IPC: H01L29/00 ,  H03F3/04 ,  H03F3/193 ,  H03G1/00 ,  H03G3/30

公开(公告)号：SE317106B

公开(公告)日：1969-11-10

申请号：SE1464

申请日：1964-01-02

Applicant: RCA CORP

Inventor： CARLSON D ,  THERIAULT G

IPC: G11C16/04 ,  H01L21/00 ,  H01L27/00 ,  H01L29/00 ,  H03D1/18 ,  H03D3/14 ,  H03D13/00 ,  H03F3/193 ,  H03G3/20 ,  H03G11/00 ,  H03G11/06 ,  H03F3/16

Abstract: 1,066,634. Circuits using field-effect transistors. RADIO CORPORATION OF AMERICA. Dec. 20, 1963 [Jan. 2, 1963], No. 50468/63. Headings H3A and H3T. In a signal-translating circuit comprising an insulated-gate field-effect transistor with a substrate connection, a signal is derived at the substrate from the input signal or signals applied to the transistor and serves either as the output of the circuit or itself effects a further control within the circuit. In a first embodiment. Fig. 6, the input applied to the insulated gate electrode is coupled capacitively to the substrate and thereafter is rectified at the junction between the substrate and source electrode and, in the case where the voltage V 2 applied to the drain electrode is of zero value, also at the junction between substrate and drain. The output appearing at the substrate terminal may be employed either as detected modulation for subsequent amplification or for automatic gain control. The circuit may serve as an I.F. amplifier in which ease the resistor 122 is replaced by a tuned circuit. The output amplitude varies with D.C. bias applied to the gate electrode, Fig. 9 (not shown), and also with frequency, Fig. 8 (not shown), so that the current may serve as a frequency discriminator. Fig. 10 shows a " constant-angle " limiter or clipping circuit producing an output whose mark-space ratio is substantially independent of input amplitude. The input waveform to be clipped is applied from source 144 in series with the sourcedrain path of the transistor. The gate electrode is biased by battery 149 so that the device does not conduct when a positive voltage is applied to the drain electrode. However, in alternate half-cycles of the waveform from source 144 a negative voltage is applied to the device which then functions as a reversely connected fieldeffect transistor so that a square-wave output is produced across load 146. At the same time, however, rectification takes place at the junction 140 so producing a negative voltage at the substrate which is coupled through battery 149 and resistor 148 to the gate electrode. The bias on the gate electrode thus varies in accordance with the amplitude of the signal applied from source 144 in such a fashion as to maintain the conduction phase angle of the transistor substantially constant. Fig. 11 shows a phase detector circuit, e.g. for use as the chroma demodulator circuit in a receiver for the N.T.S.C. colour television system, in which the output depends solely on the phase angle between two oscillations of the same frequency, e.g. the output of chroma band-pass amplifier 74 and colour subcarrier local osillator 78. The signals from circuits 74 and 78 are applied to the gate and source electrodes respectively and an output dependent upon the phase difference between these signals is developed across the output resistor 88. A voltage dependent upon input signal amplitude is applied from the substrate as bias to the grid electrode to render the output substantially independent of input signal amplitude.

公开(公告)号：SE306767B

公开(公告)日：1968-12-09

申请号：SE1332963

申请日：1963-12-02

Applicant: RCA CORP

Inventor： THERIAULT G

IPC: H03D13/00 ,  H04N5/12

Abstract: 1,041,546. Phase detectors; automatic phase control systems. RADIO CORPORATION OF AMERICA. Nov. 22, 1963 [Dec. 3, 1962], No. 46140/63. Heading H3A. An insulated-gate field-effect transistor comprises a gate electrode 46 separated by a high resistance silicon dioxide layer from a silicon substrate having source and drain electrodes 52, 50 across which a sinewave or sawtooth input signal from a source 54 to be controlled in phase is applied to produce a bidirectional current flow between the electrodes 52, 50. A second, reference pulse train input is applied to the gate electrode 46 to alter the relative magnitude of the two directional current flows so that from one electrode 50 a D.C. output is derived indicating the phase difference between the inputs and may be used for automatic frequency or phase control of the source 54. The gate electrode 46 is connected to the operating electrodes 52, 50 through equal resistors 74, 72 but if the transistor is not perfectly symmetrical, the resistors 74, 72 may be made unequal or the centre tap of the input transformer 56 may be displaced off-centre to produce zero output from the phase detector in the absence of the reference signal. In a modification electrode 52 is earthed and capacitor 62 dispensed with, an unbalanced phase detector being produced.