Abstract:
An electronic device includes a semiconductor junction within a layer of amorphous silicon contg. about 7 atomic % of Cl, Br or I. The substrate has a layer of doped amorphous Si overlaid by a further layer of amorphous Si and then a metallic film and contact electrode are formed. The device includes a Cl, Br or I-contg. amorphous Si layer formed by exposure of the substrate to an atmosphere contg. H2 and Si halide in which a glow discharge is maintained. The halide contg. layer may be treated according to process claims by heating the device to 150-250oC for 5-30 minutes.
Abstract:
An amorphous silicon material, fabricated by the process of a glow discharge in silane, is utilized as the body of semiconductor devices. The amorphous silicon can be distinguished from other amorphous silicon in that it has the kinetic characteristics of an average density of localized states in the energy gap on the order of 107/cm or less. Amorphous silicon fabricated by a glow discharge in silane has a drift mobility for electron of 10-3cm2/V-sec or greater.
Abstract:
A desk top calculator or other generator of digitized video signals is coupled to the antenna terminals of a conventional television receiver. A circuit within the generator translates the digitized video signals into a modulated TV R-F picture carrier. The circuit includes a radio-frequency source, and a network of diode switchable attenuators. The latter are operated in response to control signals for switching the radio-frequency signal between three discrete levels. Two of the levels are for the display of black and white, respectively, and the third level is a ''''blacker than black'''' synchronization level.
Abstract:
A voltage-dependent capacitor tuned oscillator employs a diode as a coupling element between an amplifying device and a resonant circuit to provide a feedback signal to the amplifying device required to sustain oscillations. The diode further provides charging current for a capacitor in the resonant circuit when a first polarity portion of the oscillations increase above a predetermined level. The charge on the capacitor decreases the feedback level, thus stabilizing the level of oscillations in the resonant circuit for each frequency to which the oscillator is tuned.
Abstract:
A method that modifies the composition of a region adjacent the surface of an ion conducting glass body comprises applying an electric field, at an elevated temperature, between opposite surfaces of the glass body to remove substantially all monovalent and most divalent ions from the region. A desired ion-depleted region occurs adjacent the anode-contacted surface of the glass body if the anode is a blocking electrode of relatively nonreactive material with the components of the glass body. A preferred blocking anode is a porous layer of colloidal particles of graphite. A particulate graphite anode allows oxygen evolving from the glass to escape therethrough, or combine with the evolving oxygen to produce easily removable gaseous byproducts, and does not supply cations to the glass body.
Abstract:
A common base amplifier used for high frequency amplification has an automatic gain control voltage applied thereto to vary the gain in a reverse mode. As the gain of the transistor is decreased, a unilateral current conduction device, coupled to the emitter electrode or input of the amplifier, is caused to conduct. The conduction of the unilateral device causes the voltages between the electrodes of the amplifier to remain constant, while further causing additional impedance shunting of the transistor to maintain the input impedance of the amplifier relatively constant during AGC operation.
Abstract:
1,060,242. Field-effect transistor amplifier circuits. RADIO CORPORATION OF AMERICA. March 20, 1964 [April 1, 1963], No. 11953/64. Heading H3T. [Also in Division H1] Two insulated-gate field-effect transistors (see Division H1) 90, 92 are connected in a cascade amplifier circuit as shown, with their semi-conductor substrates 126, 132 earthed. A circuit using a single such transistor also is given, Fig. 5 (not shown).