-
公开(公告)号：DE1437435C3
公开(公告)日：1985-04-04
申请号：DER0037592
申请日：1964-04-01
Applicant: RCA CORP
Inventor： CARLSON D , THERIAULT G
IPC: D06B23/10 , H01L27/088 , H01L29/00 , H03B5/24 , H03D7/12 , H03F1/26 , H03F3/191 , H03F3/193 , H03G1/00 , H03G3/30 , H03F3/16
Abstract: 1,060,242. Field-effect transistor amplifier circuits. RADIO CORPORATION OF AMERICA. March 20, 1964 [April 1, 1963], No. 11953/64. Heading H3T. [Also in Division H1] Two insulated-gate field-effect transistors (see Division H1) 90, 92 are connected in a cascade amplifier circuit as shown, with their semi-conductor substrates 126, 132 earthed. A circuit using a single such transistor also is given, Fig. 5 (not shown).
-
公开(公告)号：BR6352316D0
公开(公告)日：1973-09-18
申请号：BR15231663
申请日：1963-08-28
Applicant: RCA CORP
Inventor： THERIAULT G
Abstract: 1,030,124. Field effect transisor circuits; gramophone pick-up circuits. RADIO CORPORATION OF AMERICA. Aug. 16, 1963 [Sept. 7, 1962], No. 32583/63. Headings H3T and H4J. [Also in Division H1] A circuit arrangement including an insulated gate field effect transistor (MOS transistor) comprises an input circuit connected between the gate and source electrodes such that a zero D.C. potential is maintained therebetween under " no signal " conditions and an output circuit connected between the drain electrode and a point of reference potential for the circuit to which the source is directly connected. The input impedance of the transistor is of the order of 10 14 # and in general it is so constructed (see Division H1) that the zero gate bias curve 47 of the drain current-drain voltage characteristic lies in the middle of the linear operating region of the transistor. A tuned I.F. amplifier using such a device is depicted in Fig. 4 (not shown). In the superhet second detector circuit of Fig. 5 the MOS transistor 108 is selected to have a zero bias characteristic which corresponds to curve 49 (Fig. 2), so that for low level input signals it operates substantially linearly and for high level negativegoing signals the bias point is moved towards the centre of the linear operating range so as to ensure that these signals are also amplified linearly. AGC or amplified AGC may be derived from resistors 104 or 110 respectively. In a similar embodiment (Fig. 6, not shown), the gate electrode 107 is connected to the " top " of the gain control 104 and its slider 106 is connected through a capacitor to earth. An AF amplifier is described with reference to Fig. 7 (not shown), wherein a piezo-electric pick-up is connected across a potentiometer, the wiper of which is connected to the gate electrode of the M.O.S. transistor. A direct coupled linear amplifier in which the first M.O.S. transistor is chosen to have a zero bias characteristic corresponding to curve 47 and later transistors are chosen to have zero bias characteristics corresponding to one of the curves 43 to 46 in dependence upon the drain current flowing in the immediately preceding transistor under " no signal " conditions is depicted in Fig. 8 (not shown).
-
公开(公告)号：SE321268B
公开(公告)日：1970-03-02
申请号：SE1413563
申请日：1963-12-18
Applicant: RCA CORP
Inventor： GOODRICH H , THERIAULT G
-
公开(公告)号：SE318314B
公开(公告)日：1969-12-08
申请号：SE393064
申请日：1964-03-31
Applicant: RCA CORP
Inventor： CARLSON D , THERIAULT G
IPC: D06B23/10 , H01L27/088 , H01L29/00 , H03B5/24 , H03D7/12 , H03F1/26 , H03F3/191 , H03F3/193 , H03G1/00 , H03G3/30 , H03F3/16
Abstract: 1,060,242. Field-effect transistor amplifier circuits. RADIO CORPORATION OF AMERICA. March 20, 1964 [April 1, 1963], No. 11953/64. Heading H3T. [Also in Division H1] Two insulated-gate field-effect transistors (see Division H1) 90, 92 are connected in a cascade amplifier circuit as shown, with their semi-conductor substrates 126, 132 earthed. A circuit using a single such transistor also is given, Fig. 5 (not shown).
-
公开(公告)号：SE313607B
公开(公告)日：1969-08-18
申请号：SE224364
申请日：1964-02-24
Applicant: RCA CORP
Inventor： THERIAULT G
Abstract: 1,043,124. Circuits employing field-effect transistors; television. RADIO CORPORATION OF AMERICA. Feb. 13, 1964 [Feb. 25, 1963], No. 6158/64. Headings H3T and H4F. Limiting is produced in an amplifier circuit employing an insulated-gate field-effect transistor by connecting the input to the gate through a capacitor 58 and connecting the gate to a point of reference potential and to a substrate electrode through respective resistors 56 and 68. A rectifying junction exists between the substrate and source electrodes so that for large-amplitude signals rectification takes place between substrate and source electrodes so producing a reverse bias at the gate electrode to produce a limiting effect. Similar limiting action may be produced in a synchronizing- signal separation, Fig. 5 (not shown) or in a free-running oscillator, Fig. 6 (not shown).
-
Patent Agency Ranking
公开(公告)号：NL6403409A
公开(公告)日：1964-10-02
申请号：NL6403409
申请日：1964-03-31
Applicant: RCA CORP
Inventor： CARLSON D , THERIAULT G
IPC: D06B23/10 , H01L27/088 , H01L29/00 , H03B5/24 , H03D7/12 , H03F1/26 , H03F3/191 , H03F3/193 , H03G1/00 , H03G3/30
Abstract: 1,060,242. Field-effect transistor amplifier circuits. RADIO CORPORATION OF AMERICA. March 20, 1964 [April 1, 1963], No. 11953/64. Heading H3T. [Also in Division H1] Two insulated-gate field-effect transistors (see Division H1) 90, 92 are connected in a cascade amplifier circuit as shown, with their semi-conductor substrates 126, 132 earthed. A circuit using a single such transistor also is given, Fig. 5 (not shown).
-
公开(公告)号：DE1437435B2
公开(公告)日：1978-07-06
申请号：DER0037592
申请日：1964-04-01
Applicant: RCA CORP
Inventor： CARLSON D , THERIAULT G
IPC: D06B23/10 , H01L27/088 , H01L29/00 , H03B5/24 , H03D7/12 , H03F1/26 , H03F3/191 , H03F3/193 , H03G1/00 , H03G3/30 , H03F3/16
Abstract: 1,060,242. Field-effect transistor amplifier circuits. RADIO CORPORATION OF AMERICA. March 20, 1964 [April 1, 1963], No. 11953/64. Heading H3T. [Also in Division H1] Two insulated-gate field-effect transistors (see Division H1) 90, 92 are connected in a cascade amplifier circuit as shown, with their semi-conductor substrates 126, 132 earthed. A circuit using a single such transistor also is given, Fig. 5 (not shown).
-
公开(公告)号：SE313602B
公开(公告)日：1969-08-18
申请号：SE981163
申请日：1963-09-06
Applicant: RCA CORP
Inventor： THERIAULT G
Abstract: 1,030,124. Field effect transisor circuits; gramophone pick-up circuits. RADIO CORPORATION OF AMERICA. Aug. 16, 1963 [Sept. 7, 1962], No. 32583/63. Headings H3T and H4J. [Also in Division H1] A circuit arrangement including an insulated gate field effect transistor (MOS transistor) comprises an input circuit connected between the gate and source electrodes such that a zero D.C. potential is maintained therebetween under " no signal " conditions and an output circuit connected between the drain electrode and a point of reference potential for the circuit to which the source is directly connected. The input impedance of the transistor is of the order of 10 14 # and in general it is so constructed (see Division H1) that the zero gate bias curve 47 of the drain current-drain voltage characteristic lies in the middle of the linear operating region of the transistor. A tuned I.F. amplifier using such a device is depicted in Fig. 4 (not shown). In the superhet second detector circuit of Fig. 5 the MOS transistor 108 is selected to have a zero bias characteristic which corresponds to curve 49 (Fig. 2), so that for low level input signals it operates substantially linearly and for high level negativegoing signals the bias point is moved towards the centre of the linear operating range so as to ensure that these signals are also amplified linearly. AGC or amplified AGC may be derived from resistors 104 or 110 respectively. In a similar embodiment (Fig. 6, not shown), the gate electrode 107 is connected to the " top " of the gain control 104 and its slider 106 is connected through a capacitor to earth. An AF amplifier is described with reference to Fig. 7 (not shown), wherein a piezo-electric pick-up is connected across a potentiometer, the wiper of which is connected to the gate electrode of the M.O.S. transistor. A direct coupled linear amplifier in which the first M.O.S. transistor is chosen to have a zero bias characteristic corresponding to curve 47 and later transistors are chosen to have zero bias characteristics corresponding to one of the curves 43 to 46 in dependence upon the drain current flowing in the immediately preceding transistor under " no signal " conditions is depicted in Fig. 8 (not shown).
-
公开(公告)号：BE645953A
公开(公告)日：1964-07-16
申请号：BE645953
申请日：1964-03-31
Applicant: RCA CORP
Inventor： CARLSON D , THERIAULT G
IPC: D06B23/10 , H01L27/088 , H01L29/00 , H03B5/24 , H03D7/12 , H03F1/26 , H03F3/191 , H03F3/193 , H03G1/00 , H03G3/30
Abstract: 1,060,242. Field-effect transistor amplifier circuits. RADIO CORPORATION OF AMERICA. March 20, 1964 [April 1, 1963], No. 11953/64. Heading H3T. [Also in Division H1] Two insulated-gate field-effect transistors (see Division H1) 90, 92 are connected in a cascade amplifier circuit as shown, with their semi-conductor substrates 126, 132 earthed. A circuit using a single such transistor also is given, Fig. 5 (not shown).
-
-
-
-
-
-
-
-
-
Search Results
14
records
(took 0.019 seconds)
