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    TITANATE AND METAL INTERCONNECTS FOR SOLID OXIDE FUEL CELLS
    16.
    发明专利
    TITANATE AND METAL INTERCONNECTS FOR SOLID OXIDE FUEL CELLS 未知

    公开(公告)号：CA2673886A1

    公开(公告)日：2008-07-17

    申请号：CA2673886

    申请日：2007-12-27

    Applicant: SAINT GOBAIN CERAMICS

    Inventor： NARENDAR YESHWANTH

    IPC: H01M8/02

    Abstract: A solid oxide fuel cell (SOFC) includes a plurality of sub-cells. Each su b- cell includes a first electrode in fluid communication with a source of o xygen gas, a second electrode in fluid communication with a source of a fuel gas, and a solid electrolyte between the first electrode and the second ele ctrode. The SOFC further includes an interconnect between the sub-cells. In one embodiment, the SOFC has a first surface in contact with the first elect rode of each sub-cell and a second surface that is in contact with the secon d electrode of each sub-cell; and the interconnect consists essentially of a doped M-titanate based perovskite, wherein M is an alkaline earth metal. In another embodiment, the interconnect includes a fist layer in contact with the first electrode of each sub-cell, and a second layer in contact with the second electrode of each sub-cell. The first layer includes an electrically conductive material selected from the group consisting of an metal, a metal alloy and1 a mixture thereof. The second layer includes a doped M-titanate based perovskite, wherein M is an alkaline earth metal. A solid oxide fuel c ell described above is formed by connecting each of the sub-cells with an in terconnect described above.

    Método para formar una celda combustible de un óxido sólido
    17.
    发明专利
    Método para formar una celda combustible de un óxido sólido 未知

    公开(公告)号：ES2655543T3

    公开(公告)日：2018-02-20

    申请号：ES12838849

    申请日：2012-10-07

    Applicant: SAINT GOBAIN CERAMICS

    Inventor： MOHANRAM ARAVIND ,  NARENDAR YESHWANTH ,  HUANG HANSONG ,  LIN GUANGYONG

    IPC: H01M8/04 ,  H01M4/88 ,  H01M4/90 ,  H01M8/0215 ,  H01M8/1213 ,  H01M8/124 ,  H01M8/1253 ,  H01M8/24

    Abstract: Un método para formar un artículo de celda combustible de un óxido sólido (SOFC), que comprende: formar una celda unitaria de SOFC (100) que comprende: una capa no tratada de electrolito (101) que tiene una temperatura de sinterización del electrolito, una capa no tratada de interconexión (107) que tiene una temperatura de sinterización de la capa de interconexión, y una primera capa no tratada de electrodo (103) dispuesta entre la capa no tratada de electrolito (101) y la capa no tratada de interconexión (107), teniendo la primera capa no tratada de electrodo (103) una primera temperatura de sinterización del electrodo, y sinterizar la celda unitaria de SOFC (100) mediante un proceso simple de sinterización libre, para formar una celda unitaria de SOFC (100), en el que: la sinterización se realiza a una temperatura de sinterización inferior a la primera temperatura de sinterización del electrodo, superior a la temperatura de sinterización del electrolito y superior a la temperatura de sinterización de la material de interconexión, y se forman uniones por difusión entre los componentes de la capa de interconexión y la primera capa de electrodo.

    METHOD FOR FORMING SEMICONDUCTOR PROCESSING COMPONENTS
    18.
    发明专利
    METHOD FOR FORMING SEMICONDUCTOR PROCESSING COMPONENTS 未知

    公开(公告)号：AU2003251536A1

    公开(公告)日：2004-01-06

    申请号：AU2003251536

    申请日：2003-06-17

    Applicant: SAINT GOBAIN CERAMICS

    Inventor： NARENDAR YESHWANTH ,  MASTROVITO EDMUND L

    IPC: C04B35/573 ,  C04B35/80 ,  C04B38/06 ,  C30B35/00

    Abstract: A method is disclosed for forming a silicon carbide component. The method calls for providing a preform, including carbon, purifying the preform to remove impurities to form a purified preform, and exposing the purified preform to a molten infiltrant which includes silicon. According to the foregoing method, the molten infiltrant reacts with the carbon to form silicon carbide. The silicon carbide component formed according to this method may be particularly suitable for use in semiconductor fabrication processes, as a semiconductor processing component.

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