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    Method for realigning crystal orientation of single crystal body
    5.
    发明专利
    Method for realigning crystal orientation of single crystal body 有权
    用于实现单晶体晶体取向的方法

    公开(公告)号：JP2014058444A

    公开(公告)日：2014-04-03

    申请号：JP2013235337

    申请日：2013-11-13

    Applicant: Saint-Gobain Ceramics & Plastics Inc ,  サン−ゴバン セラミックス アンド プラスティクス,インコーポレイティド

    Inventor： TANIKELLA BRAHMANANDAM V ,  CHRISTOPHER ARCONA ,  DAVID I GINDHART ,  CHRISTOPHER D JONES ,  SIMPSON MATTHEW A

    IPC: C30B33/00 ,  H01L21/304

    CPC classification number: B24B7/22 ,  B24B49/12

    Abstract: PROBLEM TO BE SOLVED: To provide a method for realigning a crystal orientation of a single crystal body such as a sapphire in the production of a single crystal for a semiconductor of a nitride material of group III and V elements, especially GaN.SOLUTION: A method for altering a crystal orientation of a single crystal body includes a step of analyzing the crystal orientation of a single crystal body and a step of calculating an angle of orientation difference between a selected crystal orientation of the single crystal body and a projection of crystal orientation along a first main outer surface of the single crystal body. The method further includes a step of removing a material from at least a part of the first main outer surface to alter the angle of orientation difference.

    Abstract translation: 要解决的问题：提供一种用于在制造用于III族氮化物材料的半导体的单晶的制造中的蓝宝石等单晶体的晶体取向的方法以及V族元素，特别是GaN。解决方案：A 用于改变单晶体的晶体取向的方法包括分析单晶体的晶体取向的步骤和计算单晶体的选定晶体取向与晶体取向投影之间的取向差角度的步骤 沿着单晶体的第一主外表面。 该方法还包括从第一主外表面的至少一部分去除材料以改变取向差的角度的步骤。

    CERAMIC ARTICLE HAVING CORROSION-RESISTANT LAYER, SEMICONDUCTOR PROCESSING APPARATUS INCORPORATING SAME, AND METHOD FOR FORMING SAME
    7.
    发明申请
    CERAMIC ARTICLE HAVING CORROSION-RESISTANT LAYER, SEMICONDUCTOR PROCESSING APPARATUS INCORPORATING SAME, AND METHOD FOR FORMING SAME 审中-公开
    具有耐腐蚀层的陶瓷制品，与其相容的半导体加工装置及其形成方法

    公开(公告)号：WO2005021830A2

    公开(公告)日：2005-03-10

    申请号：PCT/US2004026764

    申请日：2004-08-19

    Applicant: SAINT GOBAIN CERAMICS ,  SIMPSON MATTHEW A ,  BILLIERES DOMINIQUE

    Inventor： SIMPSON MATTHEW A ,  BILLIERES DOMINIQUE

    IPC: C04B41/50 ,  C04B41/87 ,  C23C4/10 ,  C23C16/44 ,  C04B41/45 ,  H01L21/00

    CPC classification number: C04B41/87 ,  C04B41/009 ,  C04B41/5045 ,  Y10T428/26 ,  C04B41/4527 ,  C04B35/10

    Abstract: An article-is provided that includes a substrate and a corrosion-resistant coating provided on the substrate. The substrate generally consists essentially of alumina, and the corrosion-resistant coating is provided so as to directed contact the substrate without the provision of intervening layers between the substrate and the corrosion-resistant coatin, such as reaction products provided by high-temperature treatment processes. The corrosion-resistant coating generally consists essentially of a rare earth oxide, and has an adhesion strength not less than about 15 MPa. According to particular embodiments, the article is a ceramic component utilized and implemented in a semiconductor processing apparatus for processing semiconductor wafers.

    Abstract translation: 提供了一种包括衬底和设置在衬底上的耐腐蚀涂层的制品。 基材通常由氧化铝组成，并且提供耐腐蚀涂层以便引导接触基材，而不在基材和耐腐蚀涂层之间提供介入层，例如通过高温处理工艺提供的反应产物 。 耐腐蚀涂层通常基本上由稀土氧化物组成，并且具有不小于约15MPa的粘合强度。 根据特定实施例，制品是在用于处理半导体晶片的半导体处理装置中使用和实现的陶瓷部件。

    ELECTROSTATIC CHUCK AND METHOD OF FORMING
    8.
    发明申请
    ELECTROSTATIC CHUCK AND METHOD OF FORMING 审中-公开
    静电切割和成型方法

    公开(公告)号：WO2009085991A2

    公开(公告)日：2009-07-09

    申请号：PCT/US2008087492

    申请日：2008-12-18

    Applicant: SAINT GOBAIN CERAMICS

    Inventor： ABOUAF MARC ,  INTO STEPHEN W ,  SIMPSON MATTHEW A

    IPC: H02N13/00

    CPC classification number: H02N13/00

    Abstract: An electrostatic chuck includes an insulating layer, a conductive layer overlying the insulating layer, a dielectric layer overlying the conductive layer, the dielectric layer having pores forming interconnected porosity, and a cured polymer infiltrant residing in the pores of the dielectric layer.

    Abstract translation: 静电卡盘包括绝缘层，覆盖绝缘层的导电层，覆盖导电层的电介质层，具有形成互连孔隙的孔的电介质层和驻留在电介质层的孔中的固化的聚合物渗透剂。

    A SUSCEPTOR AND METHOD OF FORMING A LED DEVICE USING SUCH SUSCEPTOR
    9.
    发明申请
    A SUSCEPTOR AND METHOD OF FORMING A LED DEVICE USING SUCH SUSCEPTOR 审中-公开
    一种使用这种SUSCEPTOR形成LED器件的不方便和方法

    公开(公告)号：WO2008058270A3

    公开(公告)日：2008-07-10

    申请号：PCT/US2007084261

    申请日：2007-11-09

    Applicant: SAINT GOBAIN CERAMICS ,  SIMPSON MATTHEW A

    Inventor： SIMPSON MATTHEW A

    IPC: H01L21/687

    CPC classification number: H01L21/68757

    Abstract: A susceptor for holding a single crystal wafer for LED production is provided which includes a susceptor body having a recess for receiving a single crystal wafer, wherein the recess has a surface having a surface roughness (R max 191) of not greater than about 10 microns. The susceptor body also includes silicon impregnated silicon carbide and a nitride layer overlying the susceptor body.

    Abstract translation: 提供了用于保持用于LED生产的单晶晶片的感受体，其包括具有用于接收单晶晶片的凹部的基座主体，其中所述凹部具有表面粗糙度（R max max）191的表面， 不大于约10微米。 基座体还包括硅浸渍的碳化硅和覆盖基座主体的氮化物层。

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