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公开(公告)号：SE0101111L
公开(公告)日：2002-09-29
申请号：SE0101111
申请日：2001-03-28
Applicant: SECO TOOLS AB
Inventor： BERGER MATTIAS , KARLSSON LENNART
Abstract: The present invention relates to a cutting tool insert comprising a substrate and a coating including at least one layer of TiB2. The TiB2-layer has a fibrous microstructure where the grains are 5-50 nm, preferably 10-30 nm, in diameter and a length more than 250 nm, preferably more than 400 nm long, with a length to diameter ratio, 1/d > 2, preferably > 5, and oriented essentially perpendicularly to the surface of the substrate.
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公开(公告)号：SE0202036D0
公开(公告)日：2002-07-01
申请号：SE0202036
申请日：2002-07-01
Applicant: SECO TOOLS AB
Inventor： JOELSSON TORBJOERN , HOERLING ANDERS , HULTMAN LARS , SJOELEN JACOB , KARLSSON LENNART
Abstract: The present invention relates to a cutting tool insert comprising a substrate and a coating. The coating composed of one or more layers of refractory compounds of which at least one layer comprises a so called MAX-phase defined as Mn+1AXn where n is 1, 2 or 3, M is one of the elements Ti, Zr, Hf, V, Nb, Ta, Cr or Mo, A is Al, Si or S, X is C, N and/or B.
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公开(公告)号：SE531749C2
公开(公告)日：2009-07-28
申请号：SE0702054
申请日：2007-09-17
Applicant: SECO TOOLS AB , SANDVIK INTELLECTUAL PROPERTY
Inventor： PALMQVIST JENS-PETTER , SJOELEN JACOB , KARLSSON LENNART
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公开(公告)号：CZ20060400A3
公开(公告)日：2007-01-31
申请号：CZ20060400
申请日：2006-06-20
Applicant: SECO TOOLS AB
Inventor： SJAALA N JACOB , LARSSON TOMMY , KARLSSON LENNART
CPC classification number: C23C30/005 , C04B41/009 , C04B41/5068 , C04B41/87 , C23C14/0021 , C23C14/022 , C23C14/0641 , C23C14/325 , C23C14/548 , C04B35/5831 , C04B41/4529 , C04B41/455 , C04B41/5063 , C04B41/5066
Abstract: Povlak pro konečnou úpravu kalených ocelí se skládá z jedné nebo více vrstev odrazivých sloučenin, z nichž alespoň jedna vrstva obsahuje kubickou (Me,Si)X fázi, kde Me je jeden nebo více prvků z Ti, V, Cr, Zr, Nb, Mo, Hf, TRa a Al a Xje jeden nebo více z prvků N, C, O nebo B. Poměr R = (% atomů X) / (% atomů Me) c-MeSiX fáze je mezi 0,5 a 1,0 a X obsahuje méně než 30 % atomů O + B.
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公开(公告)号：DE602004003547D1
公开(公告)日：2007-01-18
申请号：DE602004003547
申请日：2004-12-21
Applicant: SECO TOOLS AB
Inventor： KARLSSON LENNART
Abstract: The present invention relates to a method of depositing using reactive magnetron sputtering a nitride based wear resistant layer on a cutting tool for machining by chip removal. According to the method the deposition rate, td, is higher than 2 nm/s a positive bias voltage, Vs between +1 V and +60 V is applied to the substrate, in respect to ground potential the substrate current density, Is/As, is larger than 10 mA/cm the target surface area, At, is larger than 0,7 times the substrate surface area, As, i.e. R= At/As>0,7 and the distance between the target surface and the substrate surface, dt, is
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Patent Agency Ranking
公开(公告)号：SE526339C2
公开(公告)日：2005-08-23
申请号：SE0202632
申请日：2002-09-04
Applicant: SECO TOOLS AB
Inventor： HOERLING ANDERS , HULTMAN LARS , SJOELEN JACOB , KARLSSON LENNART
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公开(公告)号：SE0303485L
公开(公告)日：2005-06-23
申请号：SE0303485
申请日：2003-12-22
Applicant: SECO TOOLS AB
Inventor： KARLSSON LENNART
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公开(公告)号：SE0202632D0
公开(公告)日：2002-09-04
申请号：SE0202632
申请日：2002-09-04
Applicant: SECO TOOLS AB
Inventor： HOERLING ANDERS , HULTMAN LARS , SJOELEN JACOB , KARLSSON LENNART
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公开(公告)号：SE0702054L
公开(公告)日：2009-03-18
申请号：SE0702054
申请日：2007-09-17
Applicant: SECO TOOLS AB , SANDVIK INTELLECTUAL PROPERTY
Inventor： PALMQVIST JENS-PETTER , SJOELEN JACOB , KARLSSON LENNART
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公开(公告)号：DE602004003547T2
公开(公告)日：2007-09-27
申请号：DE602004003547
申请日：2004-12-21
Applicant: SECO TOOLS AB
Inventor： KARLSSON LENNART
Abstract: The present invention relates to a method of depositing using reactive magnetron sputtering a nitride based wear resistant layer on a cutting tool for machining by chip removal. According to the method the deposition rate, td, is higher than 2 nm/s a positive bias voltage, Vs between +1 V and +60 V is applied to the substrate, in respect to ground potential the substrate current density, Is/As, is larger than 10 mA/cm the target surface area, At, is larger than 0,7 times the substrate surface area, As, i.e. R= At/As>0,7 and the distance between the target surface and the substrate surface, dt, is
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