Abstract:
PROBLEM TO BE SOLVED: To provide a cutting tool insert, a solid end mill or a drill including a substrate and a coating film. SOLUTION: The coating film is constituted of one or a plurality of layers of a refractory compound. At least one of layers of the refractory compound contains a cubic crystal (Me, Si)X phase where Me refers to one or more of Ti, V, Cr, Zr, Nb, Mo, Hf, Ta and Al, and X refers to one or more of elements N, C, O and B. A ratio R (X ratio/Me ratio) of a c-MeSiX phase is 0.5-1.0, and X contains O+B by a quantity less than 30 atom%. The invention is especially useful in application for machining metal with producing small chips and for a hard material to be machined, for example in copy-milling through the use of the solid end mill, milling an insert or boring hardened steel. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a cemented carbide cutting tool insert covering at least one layer of TiB2 on it. SOLUTION: The TiB2 layer is a fibrous fine texture, a grain diameter of the TiB2 layer is a diameter of 5-50 nm and favorably 10-30 nm, a ratio 1/d of length and the diameter is >2 and favorably >5, the length is more than 250 nm and favorably more than 400 nm and the TiB2 layer is actually vertically arranged against a surface of the base material on the cutting tool insert made of a base material and at least one layer of a TiB2 film.
Abstract:
PROBLEM TO BE SOLVED: To prepare a coating layer having a significantly small particle size and hardness thereby. SOLUTION: This coated article has a Ti (C, N, O) layer having a particle size of
Abstract:
PROBLEM TO BE SOLVED: To provide a cutting tool insert including base material and coating, a solid end mill, or a drill. SOLUTION: The coating is composed of one or more layers of refractory compounds of which at least one layer comprises a h-Me1Me2X phase, where Me1 is one or more of the elements V, Cr, Nb, and Ta and Me2 is one or more of the elements Ti, Zr, Hf, Al, and Si and X is one or more of the elements N, C, O or B. The ratio R=(at-% to X)/(at-% of Me + at-% of Me2) of the h-Me1Me2X phase is between 0.5 and 1.0, preferably between 0.75 and 1.0 and X contains less than 30 at-% of O + B. This invention is particularly useful in metal cutting applications where the chip thickness is small and the work material is hard e.g. copy milling using solid end mills, insert milling cutters or drilling of hardened steels. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
The present invention relates to a cutting tool insert comprising a substrate and a coating. The coating is composed of one or more layers of refractory compounds of which at least one layer comprises a so called precipitation hardened (TiyAlxMe1-x-y)N based layer, where Me is one of the element Zr, Hf, V, Nb, Ta, Cr, Mo, W or Si. This layer is defined by: x is between 0.50 and 0.80, the ratio, R=x/(x+y), is between 0.50 and 0.85, the sum of Ti and Al subscript, S=x+y, is between 0.7 and 1.0 the ratio of the peak width, F10/90, (FW10%M or FW90%M meaning Full Width at 10% and 90% of the maximum peak value reduced with the background) measured using X-ray diffraction with Cu K alpha radiation of the 200 peak at approximately 43 DEG 2&thetas; of the (TiyAlxMe1-x-y)N coating is higher than 7.5, the ratio between the area of the h-AlN (100) peak at approximately 33 DEG 2&thetas; (=A(h-AlN)100) and the c-(TiyAlxMe1-x-y)N (200) peak at approximately 43 DEG 2&thetas; (=A(c-(Ti,Al,Me)N)200) called K, i.e. K=A(h-AlN)100/ A(c-(Ti,Al,Me)N)200, and K is between 0 and 0.3 and the layer consists of a single (TiyAlxMe1-x-y)N (200) peak.
Abstract:
The present invention relates to a cutting tool insert comprising a substrate and a coating. The coating is composed of one or more layers of refractory compounds of which at least one layer comprises a so called precipitation hardened (TiyAlxMe1-x-y)N based layer, where Me is one of the element Zr, Hf, V, Nb, Ta, Cr, Mo, W or Si. This layer is defined by: x is between 0.50 and 0.80, the ratio, R=x/(x+y), is between 0.50 and 0.85, the sum of Ti and Al subscript, S=x+y, is between 0.7 and 1.0 the ratio of the peak width, F10/90, (FW10%M or FW90%M meaning Full Width at 10% and 90% of the maximum peak value reduced with the background) measured using X-ray diffraction with Cu K alpha radiation of the 200 peak at approximately 43 DEG 2&thetas; of the (TiyAlxMe1-x-y)N coating is higher than 7.5, the ratio between the area of the h-AlN (100) peak at approximately 33 DEG 2&thetas; (=A(h-AlN)100) and the c-(TiyAlxMe1-x-y)N (200) peak at approximately 43 DEG 2&thetas; (=A(c-(Ti,Al,Me)N)200) called K, i.e. K=A(h-AlN)100/ A(c-(Ti,Al,Me)N)200, and K is between 0 and 0.3 and the layer consists of a single (TiyAlxMe1-x-y)N (200) peak.
Abstract:
The present invention relates to a cutting tool insert comprising a substrate and a coating. The coating is composed of one or more layers of refractory compounds of which at least one layer comprises a so called precipitation hardened (TiyAlxMe1-x-y)N based layer, where Me is one of the element Zr, Hf, V, Nb, Ta, Cr, Mo, W or Si. This layer is defined by: x is between 0.50 and 0.80, the ratio, R=x/(x+y), is between 0.50 and 0.85, the sum of Ti and Al subscript, S=x+y, is between 0.7 and 1.0 the ratio of the peak width, F10/90, (FW10%M or FW90%M meaning Full Width at 10% and 90% of the maximum peak value reduced with the background) measured using X-ray diffraction with Cu K alpha radiation of the 200 peak at approximately 43 DEG 2&thetas; of the (TiyAlxMe1-x-y)N coating is higher than 7.5, the ratio between the area of the h-AlN (100) peak at approximately 33 DEG 2&thetas; (=A(h-AlN)100) and the c-(TiyAlxMe1-x-y)N (200) peak at approximately 43 DEG 2&thetas; (=A(c-(Ti,Al,Me)N)200) called K, i.e. K=A(h-AlN)100/ A(c-(Ti,Al,Me)N)200, and K is between 0 and 0.3 and the layer consists of a single (TiyAlxMe1-x-y)N (200) peak.
Abstract:
The present invention relates to a method of depositing using reactive magnetron sputtering a nitride based wear resistant layer on a cutting tool for machining by chip removal. According to the method the deposition rate, td, is higher than 2 nm/s a positive bias voltage, Vs between +1 V and +60 V is applied to the substrate, in respect to ground potential the substrate current density, Is/As, is larger than 10 mA/cm the target surface area, At, is larger than 0,7 times the substrate surface area, As, i.e. R= At/As>0,7 and the distance between the target surface and the substrate surface, dt, is