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公开(公告)号：JP2009059861A
公开(公告)日：2009-03-19
申请号：JP2007225431
申请日：2007-08-31
Inventor： MARUTANI KENTARO , SHIBUYA KIMINOBU , MIZUSAWA TAKU , HATTORI TADASHI , HOTTA SHIN
IPC: H01L21/268
Abstract: PROBLEM TO BE SOLVED: To solve the problem wherein it is difficult to perform uniform annealing in a substrate surface through annealing processing, by using a thermal conversion film converting laser light into heat, because there is film thickness distribution of thermal conversion film. SOLUTION: In annealing method of annealing an annealed region in the substrate surface which has the thermal conversion layer, converting the laser light into heat, formed on the annealed region, performed in sequence are a "determination of laser light output of each region" stage of predetermining the output of laser light with which optimum annealing quality is obtained in each of the regions obtained, by dividing the annealed region; a "determination of a laser drive current value" stage of predetermining a laser drive current value satisfying the laser output; and a "control over the laser drive current value" stage of controlling the laser drive current value to a constant value or a "control over a laser output value" stage of controlling the laser output to constant value, by adjusting the laser drive current value for each region are performed, when annealing processing is performed. COPYRIGHT: (C)2009,JPO&INPIT
Abstract translation: 解决的问题为了解决难以通过退火处理在基板表面进行均匀退火的问题，通过使用热转换膜将激光转换成热，因为热转印膜的膜厚分布 。 解决方案：在具有热转换层的基板表面中退火退火区域的退火方法中，依次执行在退火区域上形成的激光将激光转换成热，这是“每个的激光输出的确定 区域“阶段，通过划分退火区域来预先确定在获得的每个区域中获得最佳退火质量的激光输出; 确定满足激光输出的激光驱动电流值的“确定激光驱动电流值”阶段; 以及通过调整激光驱动电流值，将激光驱动电流值控制为恒定值或控制激光输出的“控制激光输出值”级的“对激光驱动电流值的控制” 当执行退火处理时，执行每个区域。 版权所有（C）2009，JPO＆INPIT
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公开(公告)号：JPH06236918A
公开(公告)日：1994-08-23
申请号：JP4594893
申请日：1993-02-09
Applicant: SONY CORP
Inventor： HATTORI TADASHI
Abstract: PURPOSE:To detect the position of an orientation flat part formed by applying the image processing to the plane image of a semiconductor wafer so as to detect the position of the center of gravity, and detecting the center position of the space figure being made between the wafer and a circumferential frame, within the circumferential frame a little smaller than the outside diameter of the semiconductor so as to seek the directional angle of the figure from the position of the center of gravity. CONSTITUTION:A CCD camera installed above a rotary table 1 takes in the plane image of the semiconductor wafer 2 installed on the rotary table, and applies image processing to it so as to detect the position P1 of the center of gravity A circumferential frame 21 a little smaller than the outside diameter of the semiconductor waver 2 to become a subject is provided in this image, and the CCD camera takes in the plane image of the semiconductor wafer 2, and applies image processing to it so as to detect the center position P2 of the space figure 23 being made between the orientation flat part 22 of the semiconductor wafer 2 and the circumferential frame 21. This center position P shows the direction of the orientation flat part 22 formed, viewed from the position P1 of the center of gravity of the semiconductor wafer 2.
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公开(公告)号：JPH0655471A
公开(公告)日：1994-03-01
申请号：JP22503292
申请日：1992-07-31
Applicant: SONY CORP
Inventor： HATTORI TADASHI
IPC: B25J9/10 , B25J18/02 , G05B19/19 , G05B19/416 , H01L21/677 , H01L21/68 , G05B19/407
Abstract: PURPOSE:To prevent the occurrence of oscillation when a work hand is reciprocally moved as well as to enhance movement efficiency by moving a work hand within a specified range in such a way as to be gradually accelerated first, moving it at a constant speed next, and thereby gradually decelerating it so as to be stopped thereafter. CONSTITUTION:A CPU 10 processes specified operations based on the stop position of a work handle 7, and a command is forwarded to a signal generator 9. The signal generator 9 then generates pulse signals based on the command, subsequently, a servo amplifier 8 receives the pulse signals, so that driving electric power is thereby supplied to a servo motor 1. As a result, each drive gear 5 is rotated to the reverse direction, and each link arm 6 is extended/ contracted, so that the work hand 7 is reciprocally moved in a specified zone between P1 and P2. In this case, the position and the moving speed of the work hand 7 are detected by an encoder 2. In the constitution as mentioned herein above, the work hand 7 is gradually accelerated first as to be moved, it is moved at a constant speed next, and it is then gradually decelerated so as to be stopped thereafter.
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公开(公告)号：JP2004281141A
公开(公告)日：2004-10-07
申请号：JP2003068771
申请日：2003-03-13
Inventor： MUTO KOICHI , AKI YUICHI , TAKAYAMA MASATO , HATTORI TADASHI , OKAWACHI HIROKI , TAKEDA MINORU
Abstract: PROBLEM TO BE SOLVED: To maintain a right posture and high vacuum even if a local vacuum pad is separated from a specimen when an outermost circumference of the specimen is measured.
SOLUTION: An electron beam irradiation device is provided with an arrangement means by which a flat satellite stage 17 installed at a circumference or at a part of the circumference of a workpiece 3 with its height equalized to that of the surface of the workpiece, and a sealing means to seal a gap between the satellite stage 17 and the workpiece 3 in close contact. By this, in a partial vacuum device, working can be carried out up to the outer peripheral part of the workpiece 3 with a posture of a static pressure floating pad maintained while the vacuum state of the static pressure floating pad is maintained.
COPYRIGHT: (C)2005,JPO&NCIPI-
Patent Agency Ranking
公开(公告)号：JP2002214159A
公开(公告)日：2002-07-31
申请号：JP2001004615
申请日：2001-01-12
Applicant: SONY CORP
Inventor： OOSHIMA AKIFUMI , ABE TETSUO , HATTORI TADASHI , TAMAOKI HIROYUKI
IPC: G01B11/30 , G01M11/00 , G01N21/958 , G01R31/02 , G02F1/1333 , G02F1/1368 , H01L21/66 , H01L29/786
Abstract: PROBLEM TO BE SOLVED: To easily observe a fine region with sufficient resolution in a short time without destroying a large substrate. SOLUTION: This substrate inspecting device is provided with drive sections 37 and 38 moving a table supporting the large substrate in X, Y, Z directions, a deep ultraviolet light microscope 30 for applying deep ultraviolet light irradiation to the surface of the large substrate supported by the table and acquiring a reflected image from the large substrate, a visible light microscope 29 for applying visible light irradiation to the surface of the large substrate supported by the table and acquiring a reflected image from the large substrate, and a mechanism 31 switching the use of the deep ultraviolet light microscope 30 and the visible light microscope 29.
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公开(公告)号：JPH0871965A
公开(公告)日：1996-03-19
申请号：JP23211094
申请日：1994-08-31
Applicant: SONY CORP
Inventor： KIKUCHI KAZUO , HATTORI TADASHI
IPC: B65G49/07 , B25J9/06 , B25J15/00 , H01L21/677 , H01L21/68
Abstract: PURPOSE: To provide a high through-put transfer device with which an optimum transfer system can be selected and which can be widely used. CONSTITUTION: A transfer device is composed of a pair of transfer robots 1, 2 which cause a second crank mechanism to perform a crank motion in association with a first parallel crank mechanism in order to transfer a load carried by transfer links 13, 23. The transfer robots 1, 2 have a rotatable base plate 3 as a first link so that proximal ends of first link arms 12, 22 are line- symmetrically arranged about the rotational center P of the base plate 3. Further, the moving paths R of the transfer links 13, 23 set on one and the same line passing through the rotational center P of the base plate P in a condition such that they are vertically deviated from each other.
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公开(公告)号：JP2003217500A
公开(公告)日：2003-07-31
申请号：JP2002011286
申请日：2002-01-21
Inventor： ABE TETSUO , OKOCHI HIROKI , HATTORI TADASHI , FUJITA HIRONORI
Abstract: PROBLEM TO BE SOLVED: To execute nondestructive inspection and measurement of an arbitrary part of a test object regardless the size of the test object, in an inspection device using a scanning electron microscope. SOLUTION: An inspection machine 1 using a scanning electron microscope is used for executing the nondestructive inspection and measurement of an arbitrary part of the test object by using the scanning electron microscope 6a. The inspection machine is provided with a local vacuum formation part 9 for forming a local vacuum region by isolating the circumference of the inspection object part of the test object from the outside air. The inspection machine is so structured that the local vacuum formation part has an exhaust means 15 for executing evacuation for forming a local vacuum region, a lifting means 14 for lifting the entire local vacuum formation part from the test object by jetting a compressed gas to the outer edge part of the local vacuum formation part, and a length measurement means 16 for measuring the distance between the test object and the local vacuum formation part in order to control the lifting of the local vacuum formation part by the lifting means. COPYRIGHT: (C)2003,JPO
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公开(公告)号：JP2002289522A
公开(公告)日：2002-10-04
申请号：JP2001360959
申请日：2001-11-27
Applicant: SONY CORP , SONY PREC TECHNOLOGY INC
Inventor： WADA HIROYUKI , TATSUKI KOICHI , UMETSU NOBUHIKO , ISOMURA EIJI , ABE TETSUO , HATTORI TADASHI , OOSHIMA AKIFUMI , URAGAKI MAKOTO , NOGUCHI YOSHIYUKI , TAMAOKI HIROYUKI , EBE MASATAKA , ISHIGURO TOMOHIRO , KATO YASUYUKI
IPC: G01N21/00 , G01N21/956 , G02F1/13 , G02F1/1368 , H01L21/20 , H01L21/66 , H01L29/786
Abstract: PROBLEM TO BE SOLVED: To provide an equipment for evaluating the state of a formed polysilicon film objectively and automatically with high accuracy without touching the film. SOLUTION: The equipment 1 for evaluating the state of a polysilicon film formed by annealing an amorphous silicon film comprises a visible light observation optical system 4 for picking up the surface image of a polysilicon film formed on a substrate W by irradiating the substrate W on a stage with visible light and auto-focusing the surface image, and an UV-ray observation optical system 6 irradiating UV-rays. From the surface image of the polysilicon film obtained by the UV-ray observation optical system, linearity and periodicity of spatial structure on the surface of the polysilicon film are evaluated and the state thereof is evaluated based on the evaluation results.
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公开(公告)号：JPH09172053A
公开(公告)日：1997-06-30
申请号：JP1977296
申请日：1996-02-06
Applicant: SONY CORP
Inventor： HIRANO SHINSUKE , SHIROSAKI TOMOHIDE , HATTORI TADASHI , KADOMURA SHINGO
IPC: C23C16/50 , C23C16/52 , H01L21/203 , H01L21/205 , H01L21/285 , H01L21/302 , H01L21/3065 , H01L21/68 , H01L21/683
Abstract: PROBLEM TO BE SOLVED: To control the temperature of a semiconductor substrate with high precision, during plasma-processing the semiconductor substrate. SOLUTION: A semiconductor substrate W is put on a sample stage 3 provided with a cooling means 9 and a heating means 8, and the semiconductor substrate W is processed by generating a plasma P, adjusting the temperature of the sample stage 3 by the cooling means 9 and the heating means 8 and adjusting the temperature of the semiconductor substrate W. The degree of heating by the heating means 8 is lowered by an amount set beforehand when the plasma P is generated, and the degree of heating is returned to its original value at the end of the generation of the plasma P.
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