公开(公告)号：JP2001267691A

公开(公告)日：2001-09-28

申请号：JP2000404035

申请日：2000-12-08

Applicant: SONY CORP

Inventor： SHIBUYA KATSUYOSHI ,  ASANO TAKEHARU ,  KIJIMA SATORU ,  YANASHIMA KATSUNORI ,  TAKEYA MOTONOBU ,  IKEDA MASAO ,  HINO TOMOKIMI ,  YAMAGUCHI KYOJI ,  IKEDA MASAAKI ,  GOTO OSAMU

IPC: C23C16/34 ,  H01L21/205 ,  H01L21/86 ,  H01L27/12 ,  H01L33/32 ,  H01S5/02 ,  H01S5/323 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor element and its manufacturing method for improving crystallization of nitride-based III-V group compound semiconductor on a sapphire substrate. SOLUTION: After a seed crystal layer 12 with a crystal part 12A made of nitride-based III-V group compound semiconductor crystal and an opening 12B is formed on a sapphire substrate, a recess 11B continuously joined to the opening 12B is formed in the sapphire substrate. An n-side contact layer 15 is grown from the crystal part 12A. As a result, a crystal grown sidewise from the crystal part 12A is prevented from being in contact with the sapphire substrate 11, and the n-side contact layer 15 and the nitride-based III-V group compound semiconductor crystal have a low density of through dislocation while a fluctuation in crystal orientation is made small.