公开(公告)号：JPH0799211A

公开(公告)日：1995-04-11

申请号：JP23998493

申请日：1993-09-27

Applicant: SONY CORP

Inventor： HIEI FUTOSHI ,  IKEDA MASAO ,  MATSUMOTO OSAMU

IPC: H01L21/203 ,  H01L21/363 ,  H01L33/28 ,  H01L33/30 ,  H01L33/40 ,  H01S5/00 ,  H01L33/00 ,  H01S3/18

Abstract: PURPOSE:To satisfactorily reduce ohmic-contact of an electrode when a ZnTe layer is used as an electrode contact layer. CONSTITUTION:Relating to manufacture of II-VI group semiconductor element wherein a 11-VI group semiconductor layer and, over it, an electrode contact layer are epitaxial-grown, by ZnTe, on a substrate 1, the position of an impurities supply source 11 for introducing impurities at, at least, epitaxial growth an its surface layer is, in the process of epitaxial growth of an electrode contact layer, shifted toward substrate 1 side from the position of impurity supply source 11 at previous epitaxial growth, for epitaxial growth.

公开(公告)号：JPH0897518A

公开(公告)日：1996-04-12

申请号：JP25876994

申请日：1994-09-28

Applicant: SONY CORP

Inventor： NAKANO KAZUSHI ,  MATSUMOTO OSAMU ,  ITO SATORU ,  ISHIBASHI AKIRA

IPC: H01L33/14 ,  H01L33/20 ,  H01L33/28 ,  H01S5/00 ,  H01S5/327 ,  H01S3/18 ,  H01L33/00

Abstract: PURPOSE: To improve the reliability and life of a blue or green light emitting semiconductor element, which emits by a method wherein the speed of the breeding of a defect at the time of current conduction through the element is made slow using II-VI compound semiconductors. CONSTITUTION: A semiconductor light-emitting element has an n-type first clad layer 3, an active layer 5 and a p-type second clad layer 7, which are laminated on a substrate, and the clad layers 3 and 7 consist of a II-VI compound semiconductor made of a compound consisting of one kind of a group II element, which is selected from a group consisting of Zn, Mg, Cd, Hg and Be, and one kind of a group VI element, which is selected from a group consisting of Se, Te and S. The active layer 5 consists of a II-VI compound semiconductor made of a compound consisting of one kind of a group 11 element, which is selected from a group consisting of Zn, Mg, Cd, Hg and Be, one kind of a group VI element, which is selected from a group consisting of S, Se and Te, and one kind of a group 11 element or a group VI element having an atomic radius smaller than those of these of the group 11 element and the group VI element. Thereby, the high-reliability and long-life semiconductor light-emitting element, which can emit a blue or green light, can be realized.

公开(公告)号：JPH07326825A

公开(公告)日：1995-12-12

申请号：JP14264094

申请日：1994-05-31

Applicant: SONY CORP

Inventor： MATSUMOTO OSAMU ,  ITO SATORU ,  IKEDA MASAO

IPC: H01L33/06 ,  H01L33/12 ,  H01L33/28 ,  H01L33/30 ,  H01L33/40 ,  H01S5/00 ,  H01S3/18 ,  H01L33/00

Abstract: PURPOSE:To improve electric and optical characteristics of a semiconductor device, by preventing the deterioration of crystallinity of II-VI compound semiconductor layer which is to be caused by defect due to lattice unconformity between the substratum of III-V compound semiconductor and the growth layer of II-VI compound semiconductor. CONSTITUTION:One or more sets of super lattice 13 composed of a zinc cadmium selenium thin film 31 and a zinc sulfur selenium thin film 32 are formed between a semiconductor substratum 11 composed of III-V compound semiconductor and a II-VI compound semiconductor layer 14. A buffer layer 12 wherein the same kind of crystal as the semiconductor substratum 11 is grown is formed between the semiconductor substratum 11 and the super lattice 13. The similar super lattice (which is not shown in figure) is formed in the II-VI compound semiconductor layer 14.

公开(公告)号：JPH0851251A

公开(公告)日：1996-02-20

申请号：JP20424594

申请日：1994-08-05

Applicant: SONY CORP

Inventor： MATSUMOTO OSAMU ,  TOMITANI SHIGETAKA ,  NAKANO KAZUSHI ,  NAGAI MASAHARU ,  ITO SATORU ,  ISHIBASHI AKIRA ,  MORITA ETSUO

IPC: H01S5/00 ,  H01S3/18

Abstract: PURPOSE:To improve an oscillation performance by heightening a crystallizability of an active layer and a guide layer or peripheral layers thereof. CONSTITUTION:This is a semiconductor device 1 where a plurality of II-VI group compound semiconductor layers 12 are formed on a semiconductor substrate 11 consisting of a III-V group compound semiconductor and where at least one set or more of superlattices 23 are formed of a II-VI group compound semiconductor in a clad layer 22 of n-type conduction of the II-VI group compound semiconductor layer 12 or between a clad layer 22 and a guide layer 24. Further, this photosemiconductor device is provided with at least one set or more of superlattices of the semiconductor base body 11 and the II-VI group semiconductor layer 12. Or, this photosemiconductor device is provided with at least one set or more superlattices formed of the II-VI group compound semiconductor between the guide layer 24 and an active layer 25.