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    MANUFACTURE OF SEMICONDUCTOR LIGHT EMITTING DEVICE
    4.
    发明专利
    MANUFACTURE OF SEMICONDUCTOR LIGHT EMITTING DEVICE 失效

    公开(公告)号：JPH11204834A

    公开(公告)日：1999-07-30

    申请号：JP2537298

    申请日：1998-02-06

    Applicant: SONY CORP

    Inventor： KATOU GOUSAKU ,  NOGUCHI HIROYASU ,  NAGAI MASAHARU

    IPC: H01L33/06 ,  H01L33/28 ,  H01L33/40 ,  H01S5/00 ,  H01L33/00 ,  H01S3/18

    Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor light emitting device having an elongated lifetime and improved reliability. SOLUTION: A method by this invention is a method for manufacturing a semiconductor light emitting device, which is constituted with II-VI group compound semiconductors, wherein the II group comprises at least one or more elements out of Zn, Be, Mg, Cd and Hg, and the VI group comprises at least one or more elements out of Se, S and Te, and which has first and second conducting-type cladding layers, 3 and 7, and an active layer, wherein the active layer is grown by specifying the feeding ratio VI/II of the VI group element(s) to the II group element(s) to be greater than 1.1 in the film growth for the active layer.

    MANUFACTURE OF SEMICONDUCTOR ELEMENT
    5.
    发明专利
    MANUFACTURE OF SEMICONDUCTOR ELEMENT 失效

    公开(公告)号：JPH11150329A

    公开(公告)日：1999-06-02

    申请号：JP31390497

    申请日：1997-11-14

    Applicant: SONY CORP

    Inventor： NAKAYAMA NORIKAZU ,  OOHARA MASAO ,  KANEKO YUMI ,  TANIGUCHI OSAMU ,  NAGAI MASAHARU

    IPC: H01L33/06 ,  H01L33/12 ,  H01L33/28 ,  H01L33/30 ,  H01S5/00 ,  H01S3/18 ,  H01L33/00

    Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor element, which can perform a processing of good accuracy on the element without depending greatly rate of etching a semiconductor layer containing a group II element such as zinc(Zn), and a group VI element such as selenium (Se), on the material constituting the layer. SOLUTION: A buffer layer 2, a first group II-VI buffer layer 3, a second group II-VI buffer layer 4, a first conductivity type clad layer 5, a first guide layer 6, an active layer 7, a second guide layer 8, a second conductivity type clad layer 9, a first semiconductor layer 10, a second semiconductor layer 11, a superlattice layer 12 and a contact layer 13 are epitaxially grown in order on the surface of a substrate 1, Thereafter, a resist film 20 of a striped pattern is formed on the layer 13. A wet etching is performed using the resist film 20 as a mask and the layers 13, 12 and 11 are selectively removed. As an etchant, a mixed solution containing hydrogen peroxide (H2 O2 ), hydrogen fluoride(HF) and a hydrochloric acid (HCl) is used.

    OBTAINING METHOD OF CRITICAL FILM THICKNESS OF COMPOUND SEMICONDUCTOR LAYER AND MANUFACTURE OF OPTICAL SEMICONDUCTOR DEVICE WHICH USES THE METHOD
    6.
    发明专利
    OBTAINING METHOD OF CRITICAL FILM THICKNESS OF COMPOUND SEMICONDUCTOR LAYER AND MANUFACTURE OF OPTICAL SEMICONDUCTOR DEVICE WHICH USES THE METHOD 失效

    公开(公告)号：JPH08139416A

    公开(公告)日：1996-05-31

    申请号：JP27873894

    申请日：1994-11-14

    Applicant: SONY CORP

    Inventor： TAMAMURA KOJI ,  TSUKAMOTO HIRONORI ,  NAGAI MASAHARU ,  IKEDA MASAO

    IPC: C30B25/16 ,  H01L21/66 ,  H01L33/06 ,  H01L33/28 ,  H01L33/30 ,  H01S5/00 ,  H01S3/18 ,  H01L33/00

    Abstract: PURPOSE: To provide a method for obtaining the crytical film thickness of an active layer or the like of an optical semiconductor device composed of a II-VI compound semiconductor layer, and form the optical semiconductor device under the optimum condition. CONSTITUTION: The relation between the film thickness of a compound semiconductor layer and the PL intensity is obtained by observing photoluminescence(PL) of the compound semiconductor layer which PL corresponds with the film thickness. The film thickness wherein the PL intensity forms a peak IP is obtained as the critical film thickness hPL. A relational equation for approximating the critical film thickness by setting the composition ratio of cadmium(Cd) in the compound semiconductor layer as a function is obtained. By using the relational equation, the critical film thickness of the compound semiconductor layer having a desired Cd composition ratio is obtained. The film thickness of the active layer is designed to be less than or equal to the critical film thickness obtained in the above manner. The active layer is formed to have the film thickness designed when a II-VI compound semiconductor layer containing an active layer is deposited on a substrate, and an optical semiconductor device is formed.

    PHOTOSEMICONDUCTOR DEVICE
    7.
    发明专利
    PHOTOSEMICONDUCTOR DEVICE 失效

    公开(公告)号：JPH0851251A

    公开(公告)日：1996-02-20

    申请号：JP20424594

    申请日：1994-08-05

    Applicant: SONY CORP

    Inventor： MATSUMOTO OSAMU ,  TOMITANI SHIGETAKA ,  NAKANO KAZUSHI ,  NAGAI MASAHARU ,  ITO SATORU ,  ISHIBASHI AKIRA ,  MORITA ETSUO

    IPC: H01S5/00 ,  H01S3/18

    Abstract: PURPOSE:To improve an oscillation performance by heightening a crystallizability of an active layer and a guide layer or peripheral layers thereof. CONSTITUTION:This is a semiconductor device 1 where a plurality of II-VI group compound semiconductor layers 12 are formed on a semiconductor substrate 11 consisting of a III-V group compound semiconductor and where at least one set or more of superlattices 23 are formed of a II-VI group compound semiconductor in a clad layer 22 of n-type conduction of the II-VI group compound semiconductor layer 12 or between a clad layer 22 and a guide layer 24. Further, this photosemiconductor device is provided with at least one set or more of superlattices of the semiconductor base body 11 and the II-VI group semiconductor layer 12. Or, this photosemiconductor device is provided with at least one set or more superlattices formed of the II-VI group compound semiconductor between the guide layer 24 and an active layer 25.

    SEMICONDUCTOR LIGHT-EMITTING ELEMENT, MANUFACTURE THEREOF AND OPTICAL DEVICE
    8.
    发明专利
    SEMICONDUCTOR LIGHT-EMITTING ELEMENT, MANUFACTURE THEREOF AND OPTICAL DEVICE 失效

    公开(公告)号：JPH10326941A

    公开(公告)日：1998-12-08

    申请号：JP24732697

    申请日：1997-09-11

    Applicant: SONY CORP

    Inventor： NAGAI MASAHARU ,  AOKI TORU ,  HATANAKA YOSHINORI ,  ISHIBASHI AKIRA

    IPC: H01L21/203 ,  H01L33/28 ,  H01L33/40 ,  H01S5/00 ,  H01S3/18

    Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element, capable of easily lowering an operating voltage, the manufacture and an optical device. SOLUTION: An (n)-type clad layer 5, a first guide layer 6, an active layer 7, a second guide layer 8, a (p)-type clad layer 9, a first semiconductor layer 10 and a second semiconductor layer 11 composed of ZnSe are successively laminated on the substrate 1 of an (n)-type and an alkali compound layer composed of Na2 Se is formed on it. Then, irradiation with an excimer laser beam is performed, a heating processing is performed, a part of the second semiconductor layer 11, at least a part of the alkali compound layer are changed and a contact layer 12 is formed. Then, a (p) side electrode 14 is formed on the contact layer 12. The contact layer 12 contains alkali metal as (p)-type impurities and electric resistance is low. Thus, the operating voltage is lowered, an operation is performed with less power, and the service life is prolonged.

    MOLECULAR-BEAM EPITAXIAL DEVICE
    10.
    发明专利
    MOLECULAR-BEAM EPITAXIAL DEVICE 失效

    公开(公告)号：JPH0878331A

    公开(公告)日：1996-03-22

    申请号：JP23210994

    申请日：1994-08-31

    Applicant: SONY CORP

    Inventor： NAGAI MASAHARU

    IPC: C30B23/08 ,  H01L21/203 ,  H01L21/363

    Abstract: PURPOSE: To provide a molecular beam epitaxial device (an MBE device), in which crystal growth is conducted while accurately measuring the intensity of molecular beams. CONSTITUTION: A substrate 10 arranged into a growth chamber 2 and ion gauges 5a-5c, vessels 3a-3c for storing materials A-C grown on the substrate 10, and a power supply 6 for heating, which heats the materials A-C stored in the vessels 3a-3c and emits molecular beams, are provided, and two or more of molecular beams having correlation regarding intensity are emitted linearly in different directions from the vessels 3a-3c respectively. The substrate 10 is irradiated with at least one molecular beam 1' in the molecular beams and the ion gauges 5a-5c are irradiated with at least one molecular beam 2' in others at the same time in an MBE device 1.

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