公开(公告)号：FR2505589A1

公开(公告)日：1982-11-12

申请号：FR8208014

申请日：1982-05-07

Applicant: SONY CORP

Inventor： SONEDA MITSUO ,  NOGUCHI TAKASHI ,  OHTSU TAKAJI

IPC: H04N5/14 ,  H03G1/00 ,  H04N5/243 ,  H04N5/335 ,  H04N5/341 ,  H04N5/357 ,  H04N5/372 ,  H04N5/374 ,  H04N5/378 ,  H04N3/15

Abstract: Solid-state image pickup apparatus, such as an MOS imager, has a two-dimensional array of picture element units each formed of a photo sensitive element and a gating element, and scanning circuits for supplying horizontal and vertical scanning pulses. The picture unit elements in turn discharge a signal charge onto vertical and horizontal transmitting lines in response to the vertical and horizontal scanning pulses. Then, a resulting signal current is used to develop an output video signal. In order to provide a strong output video signal with a good S/N ratio, a current mirror circuit, formed of an input transistor and an output transistor with first current-carrying electrodes joined together to a voltage reference point and with control electrodes joined together, amplifies the signal current. A second current-carrying electrode of the input transistor receives a constant current from a current source and also receives the signal current. The output transistor has a second current-carrying electrode connected to an output load. Another current source can be connected to the output transistor so that only AC current will flow to the output load. The output load can be a load capacitor associated with a pre-charging transistor, or can be a serial charge transfer device.

公开(公告)号：DE3541587C2

公开(公告)日：1998-04-23

申请号：DE3541587

申请日：1985-11-25

Applicant: SONY CORP

Inventor： NOGUCHI TAKASHI ,  HAYASHI HISAO ,  OHSHIMA TAKEFUMI

IPC: H01L21/20 ,  H01L21/265 ,  H01L29/786 ,  H01L21/84 ,  C30B1/02 ,  C30B31/22 ,  C30B29/06

Abstract: A method of forming a thin semiconductor film has the steps of: forming a thin semiconductor film on a predetermined substrate; implanting predetermined ions in the thin semiconductor film to convert the thin semiconductor film to a thin amorphous semiconductor film; decreasing a thickness of the thin amorphous semiconductor film to a predetermined thickness; and annealing the thin amorphous semiconductor film to cause solid-phase growth. According to this method, a large thin polycrystalline semiconductor film with a crystal grain size larger than the conventional crystal grain size and a good crystal grain orientation can be uniformly formed at a low temperature. It is, therefore, possible to use such a thin semiconductor film to fabricate a thin film semiconductor device with excellent electrical characteristics.

公开(公告)号：FR2573248B1

公开(公告)日：1991-06-21

申请号：FR8516906

申请日：1985-11-15

Applicant: SONY CORP

Inventor： HAYASHI HISAO ,  NOGUCHI TAKASHI

IPC: H01L29/78 ,  H01L21/02 ,  H01L21/20 ,  H01L21/265 ,  H01L21/324 ,  H01L21/336 ,  H01L27/12 ,  H01L29/786

Abstract: A method of manufacturing a thin film transistor comprises forming a thin polycrystalline semiconductor film 4 on a substrate 1, implanting ions in the thin polycrystalline semiconductor film to form a thin amorphous semiconductor film, forming a gate insulating film 8 and a gate electrode 7 on the thin amorphous semiconductor film, doping impurities for forming source and drain regions 9, 10 in the thin amorphous semiconductor film using the gate electrode 7 and the gate insulating film 8 as masks, and performing annealing for solid-phase growing the thin amorphous semiconductor film and at the same time for electrically activating the impurities to form the source and drain regions 9, 10.

公开(公告)号：CA1239706A

公开(公告)日：1988-07-26

申请号：CA495614

申请日：1985-11-19

Applicant: SONY CORP

Inventor： NOGUCHI TAKASHI ,  HAYASHI HISAO ,  OHSHIMA TAKEFUMI

IPC: H01L21/20 ,  H01L21/265 ,  H01L29/786 ,  H01L21/425

Abstract: A method of forming a thin semiconductor film has the steps of: forming a thin semiconductor film on a predetermined substrate; implanting predetermined ions in the thin semiconductor film to convert the thin semiconductor film to a thin amorphous semiconductor film; decreasing a thickness of the thin amorphous semiconductor film to a predetermined thickness; and annealing the thin amorphous semiconductor film to cause solid-phase growth. According to this method, a large thin polycrystalline semiconductor film with a crystal grain size larger than the conventional crystal grain size and a good crystal grain orientation can be uniformly formed at a low temperature. It is, therefore, possible to use such a thin semiconductor film to fabricate a thin film semiconductor device with excellent electrical characteristics.

公开(公告)号：GB2167899B

公开(公告)日：1988-04-27

申请号：GB8527737

申请日：1985-11-11

Applicant: SONY CORP

Inventor： HAYASHI HISAO ,  NOGUCHI TAKASHI

IPC: H01L29/78 ,  H01L21/02 ,  H01L21/20 ,  H01L21/265 ,  H01L21/324 ,  H01L21/336 ,  H01L27/12 ,  H01L29/786 ,  H01L21/18

Abstract: A method of manufacturing a thin film transistor comprises forming a thin polycrystalline semiconductor film 4 on a substrate 1, implanting ions in the thin polycrystalline semiconductor film to form a thin amorphous semiconductor film, forming a gate insulating film 8 and a gate electrode 7 on the thin amorphous semiconductor film, doping impurities for forming source and drain regions 9, 10 in the thin amorphous semiconductor film using the gate electrode 7 and the gate insulating film 8 as masks, and performing annealing for solid-phase growing the thin amorphous semiconductor film and at the same time for electrically activating the impurities to form the source and drain regions 9, 10.

公开(公告)号：GB2169442A

公开(公告)日：1986-07-09

申请号：GB8529007

申请日：1985-11-25

Applicant: SONY CORP

Inventor： NOGUCHI TAKASHI ,  HAYASHI HISAO ,  OHSHIMA TAKEFUMI

IPC: H01L21/20 ,  H01L21/265 ,  H01L29/786 ,  H01L29/02 ,  H01L29/78

Abstract: A method of forming a thin semiconductor film has the steps of: forming a thin semiconductor film on a predetermined substrate; implanting predetermined ions in the thin semiconductor film to convert the thin semiconductor film to a thin amorphous semiconductor film; decreasing a thickness of the thin amorphous semiconductor film to a predetermined thickness; and annealing the thin amorphous semiconductor film to cause solid-phase growth. According to this method, a large thin polycrystalline semiconductor film with a crystal grain size larger than the conventional crystal grain size and a good crystal grain orientation can be uniformly formed at a low temperature. It is, therefore, possible to use such a thin semiconductor film to fabricate a thin film semiconductor device with excellent electrical characteristics.

公开(公告)号：GB2167899A

公开(公告)日：1986-06-04

申请号：GB8527737

申请日：1985-11-11

Applicant: SONY CORP

Inventor： HAYASHI HISAO ,  NOGUCHI TAKASHI

IPC: H01L29/78 ,  H01L21/02 ,  H01L21/20 ,  H01L21/265 ,  H01L21/324 ,  H01L21/336 ,  H01L27/12 ,  H01L29/786 ,  H01L21/18

Abstract: A method of manufacturing a thin film transistor comprises forming a thin polycrystalline semiconductor film 4 on a substrate 1, implanting ions in the thin polycrystalline semiconductor film to form a thin amorphous semiconductor film, forming a gate insulating film 8 and a gate electrode 7 on the thin amorphous semiconductor film, doping impurities for forming source and drain regions 9, 10 in the thin amorphous semiconductor film using the gate electrode 7 and the gate insulating film 8 as masks, and performing annealing for solid-phase growing the thin amorphous semiconductor film and at the same time for electrically activating the impurities to form the source and drain regions 9, 10.

公开(公告)号：GB2108351B

公开(公告)日：1985-01-30

申请号：GB8214621

申请日：1982-05-19

Applicant: SONY CORP

Inventor： SONEDA MITSUO ,  NOGUCHI TAKASHI ,  OHTSU TAKAJI

IPC: H03G1/00 ,  H04N5/243 ,  H04N5/335 ,  H04N5/197 ,  H03G3/00

公开(公告)号：CA1170318A

公开(公告)日：1984-07-03

申请号：CA397774

申请日：1982-03-08

Applicant: SONY CORP

Inventor： NISHIMURA TOSHIMICHI ,  NOGUCHI TAKASHI

IPC: G11C19/28 ,  H03K3/286 ,  H03K5/02 ,  H03K17/66 ,  H04N5/335 ,  H04N5/3725 ,  H04N5/378 ,  H03K5/00

Abstract: A drive circuit comprises output transistors of complementary type serially coupled to each other between voltage supply terminals, auxiliary transistors of complementary type which have base electrodes respectively connected to the serial connection point between the output transistors and which are serially coupled between the respective base electrodes of the output transistors, and resistors serially coupled between the voltage supply terminals with their connection point coupled to the connection point of the auxiliary transistors. An input clock signal is supplied to the respective base electrodes of the output transistors via coupling capacitors, and an output clock pulse is derived from the serial connection point between the output transistors.

公开(公告)号：GB2108351A

公开(公告)日：1983-05-11

申请号：GB8214621

申请日：1982-05-19

Applicant: SONY CORP

Inventor： SONEDA MITSUO ,  NOGUCHI TAKASHI ,  OHTSU TAKAJI

IPC: H03G1/00 ,  H04N5/243 ,  H04N5/335 ,  H04N5/197 ,  H03G3/00

Abstract: A conventional solid state image sensing system produces signals is which are applied to a variable gain current amplifier 11, 12, 13, 14, characterised in that the gain is set (possibly automatically in accordance with overall scene brightness) by setting the currents produced by two gauged control current sources 22, 23. FET's may be used in place of the bipolar transistors shown.