公开(公告)号：DE3541587A1

公开(公告)日：1986-05-28

申请号：DE3541587

申请日：1985-11-25

Applicant: SONY CORP

Inventor： NOGUCHI TAKASHI ,  HAYASHI HISAO ,  OHSHIMA TAKEFUMI

IPC: H01L21/20 ,  H01L21/265 ,  H01L29/786 ,  H01L21/18 ,  H01L29/04 ,  H01L29/78 ,  H01L21/84 ,  C30B1/02 ,  C30B31/22 ,  C30B29/06

Abstract: A method of forming a thin semiconductor film has the steps of: forming a thin semiconductor film on a predetermined substrate; implanting predetermined ions in the thin semiconductor film to convert the thin semiconductor film to a thin amorphous semiconductor film; decreasing a thickness of the thin amorphous semiconductor film to a predetermined thickness; and annealing the thin amorphous semiconductor film to cause solid-phase growth. According to this method, a large thin polycrystalline semiconductor film with a crystal grain size larger than the conventional crystal grain size and a good crystal grain orientation can be uniformly formed at a low temperature. It is, therefore, possible to use such a thin semiconductor film to fabricate a thin film semiconductor device with excellent electrical characteristics.

公开(公告)号：GB2169442B

公开(公告)日：1988-01-06

申请号：GB8529007

申请日：1985-11-25

Applicant: SONY CORP

Inventor： NOGUCHI TAKASHI ,  HAYASHI HISAO ,  OHSHIMA TAKEFUMI

IPC: H01L21/20 ,  H01L21/265 ,  H01L29/786 ,  H01L29/02 ,  H01L29/78

Abstract: A method of forming a thin semiconductor film has the steps of: forming a thin semiconductor film on a predetermined substrate; implanting predetermined ions in the thin semiconductor film to convert the thin semiconductor film to a thin amorphous semiconductor film; decreasing a thickness of the thin amorphous semiconductor film to a predetermined thickness; and annealing the thin amorphous semiconductor film to cause solid-phase growth. According to this method, a large thin polycrystalline semiconductor film with a crystal grain size larger than the conventional crystal grain size and a good crystal grain orientation can be uniformly formed at a low temperature. It is, therefore, possible to use such a thin semiconductor film to fabricate a thin film semiconductor device with excellent electrical characteristics.

公开(公告)号：CA1315421C

公开(公告)日：1993-03-30

申请号：CA575400

申请日：1988-08-23

Applicant: SONY CORP

Inventor： HAYASHI HISAO ,  NEGISHI MICHIO ,  NOGUCHI TAKASHI ,  OHSHIMA TAKEFUMI ,  HAYASHI YUJI ,  MAEKAWA TOSHIKAZU ,  MATSUSHITA TAKESHI

IPC: H01L29/78 ,  H01L29/786

Abstract: A thin film MOS transistor has a construction which can minimize scattering of electrons and thus maximize electron mobility for allowing higher speed operation of the transistor. Toward this, the MOS transistor has a thin film form semiconductor layer having a thickness in a range less than or equal to 100 nm, between a pair of gate electrodes which oppose to each other across the semiconductor layer.

公开(公告)号：FR2573916B1

公开(公告)日：1991-06-28

申请号：FR8517451

申请日：1985-11-26

Applicant: SONY CORP

Inventor： NOGUCHI TAKASHI ,  HAYASHI HISAO ,  OHSHIMA TAKEFUMI

IPC: H01L21/20 ,  H01L21/265 ,  H01L29/786 ,  H01L29/04 ,  H01L29/68 ,  C30B1/00

Abstract: A method of forming a thin semiconductor film has the steps of: forming a thin semiconductor film on a predetermined substrate; implanting predetermined ions in the thin semiconductor film to convert the thin semiconductor film to a thin amorphous semiconductor film; decreasing a thickness of the thin amorphous semiconductor film to a predetermined thickness; and annealing the thin amorphous semiconductor film to cause solid-phase growth. According to this method, a large thin polycrystalline semiconductor film with a crystal grain size larger than the conventional crystal grain size and a good crystal grain orientation can be uniformly formed at a low temperature. It is, therefore, possible to use such a thin semiconductor film to fabricate a thin film semiconductor device with excellent electrical characteristics.

公开(公告)号：FR2573916A1

公开(公告)日：1986-05-30

申请号：FR8517451

申请日：1985-11-26

Applicant: SONY CORP

Inventor： NOGUCHI TAKASHI ,  HAYASHI HISAO ,  OHSHIMA TAKEFUMI

IPC: H01L21/20 ,  H01L21/265 ,  H01L29/786 ,  H01L29/04 ,  H01L29/68 ,  C30B1/00

Abstract: A method of forming a thin semiconductor film has the steps of: forming a thin semiconductor film on a predetermined substrate; implanting predetermined ions in the thin semiconductor film to convert the thin semiconductor film to a thin amorphous semiconductor film; decreasing a thickness of the thin amorphous semiconductor film to a predetermined thickness; and annealing the thin amorphous semiconductor film to cause solid-phase growth. According to this method, a large thin polycrystalline semiconductor film with a crystal grain size larger than the conventional crystal grain size and a good crystal grain orientation can be uniformly formed at a low temperature. It is, therefore, possible to use such a thin semiconductor film to fabricate a thin film semiconductor device with excellent electrical characteristics.

公开(公告)号：DE3541587C2

公开(公告)日：1998-04-23

申请号：DE3541587

申请日：1985-11-25

Applicant: SONY CORP

Inventor： NOGUCHI TAKASHI ,  HAYASHI HISAO ,  OHSHIMA TAKEFUMI

IPC: H01L21/20 ,  H01L21/265 ,  H01L29/786 ,  H01L21/84 ,  C30B1/02 ,  C30B31/22 ,  C30B29/06

Abstract: A method of forming a thin semiconductor film has the steps of: forming a thin semiconductor film on a predetermined substrate; implanting predetermined ions in the thin semiconductor film to convert the thin semiconductor film to a thin amorphous semiconductor film; decreasing a thickness of the thin amorphous semiconductor film to a predetermined thickness; and annealing the thin amorphous semiconductor film to cause solid-phase growth. According to this method, a large thin polycrystalline semiconductor film with a crystal grain size larger than the conventional crystal grain size and a good crystal grain orientation can be uniformly formed at a low temperature. It is, therefore, possible to use such a thin semiconductor film to fabricate a thin film semiconductor device with excellent electrical characteristics.

公开(公告)号：CA1239706A

公开(公告)日：1988-07-26

申请号：CA495614

申请日：1985-11-19

Applicant: SONY CORP

Inventor： NOGUCHI TAKASHI ,  HAYASHI HISAO ,  OHSHIMA TAKEFUMI

IPC: H01L21/20 ,  H01L21/265 ,  H01L29/786 ,  H01L21/425

Abstract: A method of forming a thin semiconductor film has the steps of: forming a thin semiconductor film on a predetermined substrate; implanting predetermined ions in the thin semiconductor film to convert the thin semiconductor film to a thin amorphous semiconductor film; decreasing a thickness of the thin amorphous semiconductor film to a predetermined thickness; and annealing the thin amorphous semiconductor film to cause solid-phase growth. According to this method, a large thin polycrystalline semiconductor film with a crystal grain size larger than the conventional crystal grain size and a good crystal grain orientation can be uniformly formed at a low temperature. It is, therefore, possible to use such a thin semiconductor film to fabricate a thin film semiconductor device with excellent electrical characteristics.

公开(公告)号：GB2169442A

公开(公告)日：1986-07-09

申请号：GB8529007

申请日：1985-11-25

Applicant: SONY CORP

Inventor： NOGUCHI TAKASHI ,  HAYASHI HISAO ,  OHSHIMA TAKEFUMI

IPC: H01L21/20 ,  H01L21/265 ,  H01L29/786 ,  H01L29/02 ,  H01L29/78

Abstract: A method of forming a thin semiconductor film has the steps of: forming a thin semiconductor film on a predetermined substrate; implanting predetermined ions in the thin semiconductor film to convert the thin semiconductor film to a thin amorphous semiconductor film; decreasing a thickness of the thin amorphous semiconductor film to a predetermined thickness; and annealing the thin amorphous semiconductor film to cause solid-phase growth. According to this method, a large thin polycrystalline semiconductor film with a crystal grain size larger than the conventional crystal grain size and a good crystal grain orientation can be uniformly formed at a low temperature. It is, therefore, possible to use such a thin semiconductor film to fabricate a thin film semiconductor device with excellent electrical characteristics.