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公开(公告)号：JP2004349573A
公开(公告)日：2004-12-09
申请号：JP2003146739
申请日：2003-05-23
Inventor： BABA TOSHIHIKO , MATSUZONO JUNJI , FURUKAWA AKIO , SASAKI SATOSHI , HOSHI MITSUNARI
IPC: H01S5/183
Abstract: PROBLEM TO BE SOLVED: To simplify the manufacture of a high power single transverse mode surface emission semiconductor laser.
SOLUTION: A surface emission semiconductor laser is provided with, on the same substrate, a current injection type light emitting part 1 having a gain and a DBR (Distributed Bragg Reflector) part 2 comprising a two-dimensional photonic crystal having no gain. The DBR part 2 is disposed at a position on the substrate where it guides and couples light waves from the light emitting part 1 in the shape of a ring surrounding the light emitting part 1. One electrode thereof for current injection into the light emitting part is deposited in a limited manner on at least a part on the light emitting part excepting at least an external circumferential part on the two-dimensional photonic crystal DBR part. The light emitting part and the DBR part are disposed at different positions planarly. Hereby, the light emitting part 1 and the DBR part 2 can be formed on the same substrate, so that any inconvenience of a manufacturing treatment thereof caused by the formation thereof on different substrates is avoided.
COPYRIGHT: (C)2005,JPO&NCIPI-
12.发明专利
公开(公告)号：JP2004165461A
公开(公告)日：2004-06-10
申请号：JP2002330125
申请日：2002-11-13
Inventor： HOSHI MITSUNARI , FURUKAWA AKIO , SASAKI SATOSHI
Abstract: PROBLEM TO BE SOLVED: To provide a surface emitting laser capable of decreasing a threshold current with a simple structure, an electronic apparatus having the surface emitting laser, and to provide a method for manufacturing the surface emitting laser. SOLUTION: A suppression region is provided to suppress diffusion of current in the outside of a first region so as to surround the first region, to which the current is fed along an optical resonant direction from the upper side of a semiconductor layer. Consequently, the current flown into the first region hardly leaks out thereof, thereby acting upon the oscillation of the laser beam for sure and reducing the threshold current. COPYRIGHT: (C)2004,JPO
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公开(公告)号：JP2002334406A
公开(公告)日：2002-11-22
申请号：JP2001137100
申请日：2001-05-08
Applicant: SONY CORP
Inventor： SUGAWARA NOBUHIRO , TERADA SHOJI , SASAKI SATOSHI , AKAMA HIROSHI
IPC: G11B5/31
Abstract: PROBLEM TO BE SOLVED: To improve the recording ability of a magnetic head coped with the high recording density. SOLUTION: This magnetic head having such a structure that a recording gap 16 is held between a low layer core 11 and an upper layer core 18 constituted of a tip recording core 18 corresponded to the specified recording width and a back yoke 19, is furnished with an auxiliary magnetic pole 20 between the tip recording core 18 and the back yoke 19.
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公开(公告)号：JP2011035278A
公开(公告)日：2011-02-17
申请号：JP2009182036
申请日：2009-08-05
Inventor： KAGAWA KEIEI , MIZUGUCHI TETSUYA , FUJIWARA ICHIRO , KOUCHIYAMA AKIRA , SASAKI SATOSHI , YAMADA NAOMI
CPC classification number: H01L45/06 , H01L45/085 , H01L45/1233 , H01L45/146 , H01L45/16 , H01L45/1633
Abstract: PROBLEM TO BE SOLVED: To strike a balance between the reduction in thickness of a memory layer and the suppression of variations among elements, in a resistance change type semiconductor memory device.
SOLUTION: Resistance change type memory cells are arranged in an array. Each of the memory cells includes a first electrode 15 formed on a semiconductor substrate 10, an ion source layer 17 formed on an upper layer of the first electrode, and a second electrode 19 formed on an upper layer of the ion source layer, and a resistance change type memory layer 16 is formed on an interfacial surface between the first electrode and the ion source layer by oxidization of the surface of the first electrode or the surface of the ion source layer.
COPYRIGHT: (C)2011,JPO&INPITAbstract translation: 要解决的问题：为了在电阻变化型半导体存储器件中平衡存储层的厚度的减小和元件之间的变化的抑制。 解决方案：电阻变化型存储单元排列成阵列。 每个存储单元包括形成在半导体衬底10上的第一电极15，形成在第一电极的上层上的离子源层17和形成在离子源层的上层上的第二电极19， 通过氧化第一电极的表面或离子源层的表面，在第一电极和离子源层之间的界面上形成电阻变化型存储层16。 版权所有（C）2011，JPO＆INPIT
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公开(公告)号：JP2009141151A
公开(公告)日：2009-06-25
申请号：JP2007316329
申请日：2007-12-06
Inventor： SONE TAKESHI , ENDO KEITARO , SASAKI SATOSHI , KOUCHIYAMA AKIRA
Abstract: PROBLEM TO BE SOLVED: To provide a memory element which has a larger number of times for repeatable operation than conventional ones, and exhibits a stable resistance varying switching characteristic. SOLUTION: The memory element 1A has a memory layer 17 and an upper electrode 18 on a lower electrode 14 and an insulating film 15. The memory layer 17 comprises the laminating-layer structure of a high-resistance layer and an ion-source layer. The high-resistance layer is formed out of the oxide film of Gd (gadolinium), and the ion-source layer contains such metal elements as Cu (copper), Zr (zirconium), Al (aluminum), and so forth together with such chalcogenide elements as S (sulfur), Se (selenium), Te (tellurium), and so forth. The insulation film 15 has a recessed portion 16, and the lower electrode 14 contacts with the memory layer 17 in the recessed portion 16. The depth of the recessed portion 16 is not smaller than 2 nm and not larger than 20 nm preferably, and is not smaller than 5 nm and not larger than 16 nm more preferably. COPYRIGHT: (C)2009,JPO&INPIT
Abstract translation: 要解决的问题：提供一种具有比常规操作重复操作次数更多的存储元件，并且具有稳定的电阻变化开关特性。 存储元件1A在下电极14和绝缘膜15上具有存储层17和上电极18.存储层17包括高电阻层和离子交换层的层叠层结构， 源层。 高电阻层由Gd（钆）的氧化膜形成，离子源层与Cu（铜），Zr（锆），Al（铝）等金属元素一起包含 硫属元素作为S（硫），Se（硒），Te（碲）等。 绝缘膜15具有凹部16，下部电极14与凹部16中的记忆层17接触。凹部16的深度优选为2nm以上且20nm以下，并且为 不小于5nm且不大于16nm。 版权所有（C）2009，JPO＆INPIT
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Patent Agency Ranking
公开(公告)号：JP2009135206A
公开(公告)日：2009-06-18
申请号：JP2007308916
申请日：2007-11-29
Inventor： YASUDA SHUICHIRO , ARAYA KATSUHISA , KOUCHIYAMA AKIRA , MIZUGUCHI TETSUYA , SASAKI SATOSHI
CPC classification number: G11C13/0004 , G11C13/00 , G11C2213/79 , H01L27/101 , H01L27/2436 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/145 , H01L45/146
Abstract: PROBLEM TO BE SOLVED: To provide a memory cell which applies a voltage required to change it into a high resistance state or a low resistance state, to a variable resistance element by suitably controlling the resistance value. SOLUTION: A memory device 10, a nonlinear resistance element 20, and an MOS transistor 30 are electrically connected in series. The memory device 10 has an inverse nonlinear current-voltage characteristic with respect to the nonlinear current-voltage characteristic of the MOS transistor 30, and it is changed into the high resistance state or the low resistance state according to the polarity of the applied voltage. The nonlinear resistance element 20 has a nonlinear current-voltage characteristic common to the nonlinear current-voltage characteristic of the memory device 10. COPYRIGHT: (C)2009,JPO&INPIT
Abstract translation: 要解决的问题：通过适当地控制电阻值，提供一种将可变电阻元件改变为高电阻状态或低电阻状态所需的电压的存储单元。 解决方案：存储器件10，非线性电阻元件20和MOS晶体管30串联电连接。 存储器件10具有相对于MOS晶体管30的非线性电流 - 电压特性的反非线性电流 - 电压特性，并且根据施加电压的极性而变为高电阻状态或低电阻状态。 非线性电阻元件20具有与存储器件10的非线性电流 - 电压特性相同的非线性电流 - 电压特性。版权所有（C）2009，JPO＆INPIT
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公开(公告)号：JP2008135659A
公开(公告)日：2008-06-12
申请号：JP2006322188
申请日：2006-11-29
Inventor： YASUDA SHUICHIRO , SONE TAKESHI , SASAKI SATOSHI , TSUSHIMA TOMOHITO , ENDO KEITARO
IPC: H01L27/10 , H01L27/105 , H01L45/00 , H01L49/00
Abstract: PROBLEM TO BE SOLVED: To provide a non-volatile memory device having non-volatile characteristic and configuration easy to manufacture and control its property. SOLUTION: A memory layer 3 is arranged between two electrodes 1 and 2. The memory layer 3 constitutes a memory element 5 with composition containing one metallic element chosen from Cu, Ag and Zn, one chalcogen element chosen from Te, S and Se, and Si or Ge. COPYRIGHT: (C)2008,JPO&INPIT
Abstract translation: 要解决的问题：提供一种具有易于制造和控制其性质的非易失性特性和结构的非易失性存储器件。 存储层3构成存储元件5，其中含有一种选自Cu，Ag和Zn的金属元素，一种选自Te，S的硫属元素，以及 Se，Si或Ge。 版权所有（C）2008，JPO＆INPIT
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公开(公告)号：JP2008042034A
公开(公告)日：2008-02-21
申请号：JP2006216180
申请日：2006-08-08
Inventor： SONE TAKESHI , KOCHIYAMA AKIRA , SASAKI SATOSHI , MIZUGUCHI TETSUYA
Abstract: PROBLEM TO BE SOLVED: To provide a reliable storage element stably holding information stored by utilizing a change in the resistance state of a thin film for storage included in a storage layer. SOLUTION: The storage layer 6 is sandwiched between first and second electrodes 1, 5. In the storage layer 6, an insulating layer 2 of which thermal conductivity is not less than 15 W/mK, a thin film 3 for storage made of rare earth element oxide, and an ion source layer 4 containing Cu, Ag, or Zn to be ionized are laminated. In the storage element 10, the storage layer 6 is connected to one electrode 1 through an opening formed in the insulating layer 2. COPYRIGHT: (C)2008,JPO&INPIT
Abstract translation: 要解决的问题：提供一种可靠的存储元件，其通过利用包含在存储层中的存储用薄膜的电阻状态的变化来稳定地保持存储的信息。 解决方案：存储层6夹在第一和第二电极1,5之间。在存储层6中，导热率不小于15W / mK的绝缘层2，用于存储的薄膜3 的稀土元素氧化物和含有要离子化的Cu，Ag或Zn的离子源层4。 在存储元件10中，存储层6通过形成在绝缘层2中的开口连接到一个电极1.版权所有（C）2008，JPO＆INPIT
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公开(公告)号：JP2004158505A
公开(公告)日：2004-06-03
申请号：JP2002320210
申请日：2002-11-01
Inventor： SASAKI SATOSHI , FURUKAWA AKIO , HOSHI MITSUNARI , MATSUZONO JUNJI
IPC: H01S5/183
Abstract: PROBLEM TO BE SOLVED: To provide a surface emitting laser which has a large aperture, is capable of outputting a high power stably in a single mode, and reducing a threshold current, and to provide an electronic apparatus equipped with the same and a method of manufacturing the same. SOLUTION: A second region whose effective refractive index is slightly different from the refractive index of a first region is formed so as to surround the first region in the direction of optical resonance, and an electrode used for injecting a current into the first region and an insulator for stopping a current from entering the second region are formed. By this setup, laser rays of a higher order in a lateral mode are never guided through the first region, and laser rays of a single mode are trapped and guided in the first region, so that the surface emitting laser is capable of outputting a high power stably in a single mode, and reducing a threshold current even though laser rays of a lateral mode are emitted as a laser beam of a high power due to a large aperture. COPYRIGHT: (C)2004,JPO
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公开(公告)号：JP2002163809A
公开(公告)日：2002-06-07
申请号：JP2000356255
申请日：2000-11-22
Applicant: SONY CORP
Inventor： ISHII SATOSHI , SASAKI SATOSHI
IPC: G01R33/09 , G11B5/31 , G11B5/39 , H01F10/16 , H01F10/26 , H01F10/32 , H01F41/30 , H01L43/08 , H01L43/12
Abstract: PROBLEM TO BE SOLVED: To equalize the etching rates of a laminated part of insulating layer/ metal layer and a part in which the insulating layer does not substantially exist, in a method of manufacturing the magneto-resistive(MR) element to simultaneously etch both parts. SOLUTION: In a method for manufacturing comprises a step for patterning a laminated layer with an anti-ferromagnetic layer 4, a fixed layer 3, and a spacer layer 5, a step for embedding an insulating layer 13 to the surrounding of a patterned laminated layer, a step for forming a film double used both as a free layer and a flux guide layer over this insulating layer 13 and the patterned laminated layer, and a step for simultaneously patterning by the beam etching the flux guide layer and the laminated layer to form a laminated structure part 6, by selecting incident angle θ of the etching beam to the normal line of an etching plane at 100 deg.
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