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公开(公告)号：DE69516957T2
公开(公告)日：2000-11-09
申请号：DE69516957
申请日：1995-03-30
Applicant: SONY CORP
Inventor： HAGA SHUICHI , SASAKI MAMORU , SUYAMA HIDEO , SUGAWARA NOBUHIRO , TAKADA AKIO , KUROSU MIKIYA , OHSHIMA CHIZURU
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公开(公告)号：DE69516957D1
公开(公告)日：2000-06-21
申请号：DE69516957
申请日：1995-03-30
Applicant: SONY CORP
Inventor： HAGA SHUICHI , SASAKI MAMORU , SUYAMA HIDEO , SUGAWARA NOBUHIRO , TAKADA AKIO , KUROSU MIKIYA , OHSHIMA CHIZURU
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公开(公告)号：SG33602A1
公开(公告)日：1996-10-18
申请号：SG1995001921
申请日：1995-11-24
Applicant: SONY CORP
Inventor： SUGAWARA NOBUHIRO , SUYAMA HIDEO , TAKADA AKIO
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4.发明专利
公开(公告)号：JP2003059717A
公开(公告)日：2003-02-28
申请号：JP2001242423
申请日：2001-08-09
Inventor： KONISHIIKE ISAMU , SUGAWARA NOBUHIRO
Abstract: PROBLEM TO BE SOLVED: To provide a thick plating film which is reduced in stress by solving the problem about the fact that large stress occurs in an FeCoNi plating film having a high saturation magnetic flux density Bs without using a conventional method of adding sulfur S. SOLUTION: This soft magnetic film 1 has a laminated structure composed of a plurality of soft magnetic thin film layers as main layers 2 which contain FeCoNi as main components and a plurality of auxiliary layers 3 which are each interposed between the main layers 2 and contain FeNi or FeCoNi as main components. By the presence of the auxiliary layers 3 as intermediate layers, stress occurring in the main layers 2 can be reduced, a thick magnetic thin film can be formed, and a plating current can be increased due to a reduction in stress when a magnetic thin film is formed, so that a time required for forming the magnetic film can be shortened.
Abstract translation: 要解决的问题：提供一种通过解决在具有高饱和磁通密度Bs的FeCoNi电镀膜中产生大的应力的问题而不使用常规的添加硫的方法来提供应力降低的厚电镀膜。 解决方案：该软磁性膜1具有由作为主要成分的以FeCoNi为主成分的主层2的多个软磁性薄膜层构成的层叠结构，以及分别介于主层2之间并含有FeNi的多个辅助层3 或FeCoNi为主要成分。 通过作为中间层的辅助层3的存在，可以减少在主层2中产生的应力，可以形成厚的磁性薄膜，并且当磁性薄膜的应力减小时，可以增加电镀电流 形成，从而可以缩短形成磁性膜所需的时间。
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公开(公告)号：JP2002334406A
公开(公告)日：2002-11-22
申请号：JP2001137100
申请日：2001-05-08
Applicant: SONY CORP
Inventor： SUGAWARA NOBUHIRO , TERADA SHOJI , SASAKI SATOSHI , AKAMA HIROSHI
IPC: G11B5/31
Abstract: PROBLEM TO BE SOLVED: To improve the recording ability of a magnetic head coped with the high recording density. SOLUTION: This magnetic head having such a structure that a recording gap 16 is held between a low layer core 11 and an upper layer core 18 constituted of a tip recording core 18 corresponded to the specified recording width and a back yoke 19, is furnished with an auxiliary magnetic pole 20 between the tip recording core 18 and the back yoke 19.
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Patent Agency Ranking
公开(公告)号：JP2000311323A
公开(公告)日：2000-11-07
申请号：JP12273799
申请日：1999-04-28
Applicant: SONY CORP
Inventor： SUGAWARA NOBUHIRO , TERADA SHOJI , KATAKURA TORU
IPC: G11B5/60
Abstract: PROBLEM TO BE SOLVED: To improve an internal transfer speed of a hard disk by arranging mutual positional intervals among high frequency current transmission wirings to be connected with a recording head and a recording preamplifier so as to be within a specific range. SOLUTION: When a recording head of a hard disk is driven with a high frequency, a high frequency current is, normally, transmitted from a recording preamplifier 3 to an arm 9 and to a recording head chip 13 through a suspension 10 via high frequency current transmission wirings 12. It is preferable that the high frequency current transmission wirings 12 are installed so that positional intervals among the high frequency current transmission wirings 12 are each 0.1 μm to 15 μm. Thus, it is possible to reduce cross magnetic fluxes passing the gap between the high frequency current transmission wirings 12, and reduce the inductance of the high frequency current transmission wirings 12. Namely, the inductance of the high frequency current transmission wirings 12 occupies about 60% of a total inductance of the recording head, therefore, the whole inductance of the recording head can be reduced substantially.
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公开(公告)号：JP2000311322A
公开(公告)日：2000-11-07
申请号：JP12273699
申请日：1999-04-28
Applicant: SONY CORP
Inventor： SUGAWARA NOBUHIRO , TERADA SHOJI , KATAKURA TORU
IPC: G11B5/60
Abstract: PROBLEM TO BE SOLVED: To improve an internal transfer speed of a hard disk by constituting high frequency current transmission wiring of plural lines, and also installing the high frequency current transmission wiring, through which high frequency currents are made to flow in the reverse direction to each other, to adjoin in parallel to each other, or arranging them in a braided state. SOLUTION: In a hard disk, high frequency current transmission wiring are installed so that the transmission wiring adjoin in parallel to each other, through which high frequency currents are made to flow in the reverse direction to each other. When the high frequency current transmission wiring are constituted using three-line wiring of covered wires, the wiring are constituted of a center wiring 15 through which the high frequency current is made to flow from the front to the depth and which is arranged in the middle, of the three lines and outside wiring 16 through which the high frequency currents are made to flow from the depth to the front and which is no both sides of the center wiring 15, and the wiring are installed in a parallel state to each other.
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公开(公告)号：JPH10321435A
公开(公告)日：1998-12-04
申请号：JP12695897
申请日：1997-05-16
Applicant: SONY CORP
Inventor： MAESAKA AKIHIRO , SUGAWARA NOBUHIRO
Abstract: PROBLEM TO BE SOLVED: To sufficiently prevent thermal degradation of magnetic property due to thermal treatment, by providing a base having at least a specified film forming surface and a spin valve film formed by single crystal growth on the film forming surface. SOLUTION: A MgO(111.) substrate 21 is used, and after the surface (film forming surface) of the substrate 21 is sputter-etched, a spin valve film is formed thereon, thus manufacturing a magnetoresistance effect element 16. This sputter etching is carried out for removing a chemically adsorbed substance on the surface of the substrate. The film produced on the film forming surface of the MgO (111) substrate 21 is constituted by the MgO(111) single crystal substrate 21, an NiFe layer 12, CoFe layer 22, a Cu layer 13, a CoFe layer 14, an IrMn layer 15, and a Ta layer 10. In this case, distribution of crystal orientation of the NiFe layer 12 and the IrMn layer 15 is coincident with that of MgO(111). The spin valve film is a single crystal layer formed by hetero- epitaxial growth over the entire film.
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公开(公告)号：JPH0936455A
公开(公告)日：1997-02-07
申请号：JP20790695
申请日：1995-07-21
Applicant: SONY CORP
Inventor： SUGAWARA NOBUHIRO
Abstract: PROBLEM TO BE SOLVED: To suppress distortion in the reproduced output from a magnetoresistive effect thin film magnetic head by making a working layer (free layer) extremely thin within a specified range thereby enhancing the linearity in the operation and the field sensitivity of element. SOLUTION: A working layer 42 is made as thin as 5.0nm or less in order to cancel the AMR effect thus enhancing the operational linearity of an SV element as compared with a conventional one. When the soft magnetic characteristics of working layer are enhanced, the field sensitivity of element can also be enhanced. Consequently, distortion in the waveform reproduced by a head can be suppressed and a wide dynamic range can be ensured thus enhancing the electromagnetic conversion efficiency of head. In addition to the enhancement of reproduction characteristics of head, a high field sensitivity is ensured even if the field strength of signal is reduced due to high density recording thus realizing higher density recording.
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公开(公告)号：JPH0836715A
公开(公告)日：1996-02-06
申请号：JP17220794
申请日：1994-07-25
Applicant: SONY CORP
Inventor： SUGAWARA NOBUHIRO , SUYAMA HIDEO , YORIZUMI MINEO , SUGAWARA JUNICHI , SAITO NORIO
Abstract: PURPOSE:To secure the operating stability of an element when a track is narrowed and improve the recording density and output of a head, by forming a magnetoresistance effect element of a lamination of an antiferromagnetic film, a soft magnetic film, a non-magnetic film and a magnetoresistance effect element film. CONSTITUTION:The magnetoresistance effect (MR) element 7 is formed out of lamination of an antiferromagnetic film 15, a soft magnetic film 16, a non- magnetic film 17 and an MR element film 18. These thin films are layered in such a manner that the antiferromagnetic film 15 is brought into touch with the soft magnetic film 16 and moreover, the antiferromagnetic film 15 is not in touch with the MR element film 18. Accordingly, the magnetization of the soft magnetic film set in touch with the antiferromagnetic film is fixed by the antiferromagnetic film. Since a fixed magnetic field is impressed to the MR element film, the MR element operates stably, and the generation of Barkhausen noises is suppressed.
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