公开(公告)号：JPH0766125A

公开(公告)日：1995-03-10

申请号：JP23733693

申请日：1993-08-30

Applicant: SONY CORP

Inventor： SUGANO YUKIYASU ,  HOSHINO KAZUHIRO

IPC: C23C14/34 ,  H01L21/203 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065

Abstract: PURPOSE:To achieve good processing by setting the weight of a member for pressing an object to be processed on the front thereof higher than the lifting force of gas pressure thereby setting an arbitrary gas pressure being employed for ensuring thermal conductivity. CONSTITUTION:A heating plate 3 mounting an Si wafer 4 is lifted to cause lifting of a presser ring 8 placed on a separating plate 7 thus pressing the Si wafer 4. A weight 9 is placed on the presser ring 8. When the pressure on the rear surface is 1300Pa, the force for pushing up the wafer is 2.30kg in case of a 6 inch wafer. Consequently, when the total weight of the presser ring 8 and the weight 9 is 2.30kg for a 6 inch wafer, gas pressure of 1300Pa is obtained on the rear surface and thereby the thermal conductivity is enhanced and quick temperature rise/cooling characteristics are obtained, resulting in a good filling of a contact hole using high temperature sputtering.

公开(公告)号：JPH0653167A

公开(公告)日：1994-02-25

申请号：JP22210292

申请日：1992-07-29

Applicant: SONY CORP

Inventor： MAEDA KEIICHI ,  SUGANO YUKIYASU

IPC: H01L21/28 ,  H01L21/3205 ,  H01L23/52

Abstract: PURPOSE:To facilitate embedment and flattening into a hole and to realize film formation and embedded wiring of high reliability by embedding an Al, based material into a hole of a high-scale integrated semiconductor device and by coating the top of a hole opening to form a pure Al wiring via a Ti based material layer. CONSTITUTION:An Si substrate 1 is overlaid with a base Ti film 2, which is filmed with an Al-Si alloy by high temperature sputtering to form an Al alloy layer. The base Ti and the Al-Si alloy react during high temperature sputtering with the result that an Al-Si-Ti ternary alloy layer 21 is formed with no Si nodules. It is further filmed with pure Al 14 by sputtering. And further, it is filmed with an antireflection film and subjected to patterning by a normal photoresist step and an RIE step. Also, a multi-chamber type sputter system is used to make an ultrahigh vacuum for film formation. After barrier metal is formed, an Al alloy film 3 is successively formed by magnetron sputtering in a vacuum.

公开(公告)号：JPH05335284A

公开(公告)日：1993-12-17

申请号：JP17023092

申请日：1992-06-03

Applicant: SONY CORP

Inventor： SUGANO YUKIYASU

IPC: G01K5/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/66

Abstract: PURPOSE:To provide highly accurate temperature measuring device and method with a simplified structure. CONSTITUTION:In a temperature measuring device 1 including a temperature measuring part 3 disposed on a silicon plate 2 at a predetermined location of the same, a predetermined capacity recess 4 is provided in the upper surface of the silicon plate 2, and a space in the recess 4 is brought into a closed state by depositing a thin film 5 in the recess 4, into which space gas is introduced at a predetermined pressure. The silicon plate 2 is heated and the gas in the recess 4 is expanded, so that the thin film 5 deposited in the recess 4 is swelled out. Temperature of the silicon plate 2 is determined by measuring the swelled height of the thin film 5.

公开(公告)号：JPH04150049A

公开(公告)日：1992-05-22

申请号：JP27470890

申请日：1990-10-13

Applicant: SONY CORP

Inventor： TAGUCHI MITSURU ,  KOYAMA KAZUHIDE ,  SUGANO YUKIYASU

IPC: H01L21/66

Abstract: PURPOSE:To presume a heat treating temperature actually applied to a base by sequentially forming a Ti film, an Al series film on the substrate, heat- treating it as prescribed, then selectively removing the Al series film and an alloy layer, and measuring a resistance value of the remaining Ti film. CONSTITUTION:A Ti film 3 and an Al series film 4 are sequentially formed on an insulating film 2 of a wafer at an ambient temperature by a sputtering method, etc. Then, it is heated at about 400-500 deg.C for about several tens of seconds. An allay layer is formed in a boundary between the film 3 and the Al series film, and its thickness is larger, as the heat-treating temperature is higher. Then, the film 4 and the alloy layer are removed by etching, and only the film 3 remains. This thickness t4 is thinner as the heat-treating temperature is higher, and the sheet resistance value becomes larger. The sheet resistance value is measured by a deep probing method, etc., and compared with a sheet resistance value of a standard sample to easily presume actual heat- treating temperature.

公开(公告)号：JPH03184343A

公开(公告)日：1991-08-12

申请号：JP32324589

申请日：1989-12-13

Applicant: SONY CORP

Inventor： SUGANO YUKIYASU ,  SAKURAI HIROSHI

IPC: H01L21/3205 ,  H01L23/52

Abstract: PURPOSE:To suppress generation of void of low melting point metal wirings upon deformation of a first insulating film as a lower layer film of the wirings by heat treating the first film within a temperature range of the melting point or lower of metal for forming the wiring layer formed on the first film. CONSTITUTION:A step of forming a first insulating film 11 on a substrate 10, a step of forming a low melting point metal wiring layer 12 patterned on the film 11, a step of heat treating the film 11 within a temperature range of the melting point or lower of the metal, and a step of forming a second insulating film 13 on the film 11 and the layer 12 are provided. For example, the film 11 is deposited as the first insulating film on the substrate 10, an aluminum film containing silicon is formed thereon, and aluminum wirings 12 as the low melting point metal wirings are formed. It is annealed at 500 deg.C for 30 min in an N2 atmosphere, and the film 12 is sufficiently contracted. Then, a PSG film 13 as a second insulating film is deposited on the film 11 and wirings 12.

公开(公告)号：JPH03145715A

公开(公告)日：1991-06-20

申请号：JP28414289

申请日：1989-10-31

Applicant: SONY CORP

Inventor： MINEGISHI SHINJI ,  SUGANO YUKIYASU

IPC: G03F7/16 ,  B05C11/08 ,  H01L21/027 ,  H01L21/304

Abstract: PURPOSE:To reduce the contamination of a substrate without having a hindrance in rotary support of the substrate by a method wherein, in a device with which a thin film is formed on a substrate while a semiconductor substrate supported by a chuck is being rotated, the adhesion area of the chuck and the substrate is made small as much as possible. CONSTITUTION:A disc-shaped chuck base 2A, having the diameter almost same as a semiconductor substrate 10, is provided on a vacuum chuck 1A, and at least three or more supporting parts 20 are installed on the surface in upright position on the same circumference and almost in the same height. An exhaust hole 9A is penetratingly formed on the bottom face of the shaft part 8, which is protrudingly formed on the center part on the rear surface of the chuck base 2A and on the top surface of the supporting part 20. In order to form a thin film 11, the shaft part 8 is connected to a rotary driving system and a vacuum system, the substrate 10 is placed on the supporting part 20, the substrate is supported by attraction, a coating material is fed to its surface, the vacuum chuck 1A is rotary driven, and the thin film is formed in desired thickness. A solvent is spread on the rear surface of the substrate 10 while it is being rotated, and the coating material creeped on the rear surface of the substrate is washed. As the substrate 10 is point-supported on the rear circumferential part, the center part to be used for a semiconductor device can sufficiently be cleaned.

公开(公告)号：JPH02305960A

公开(公告)日：1990-12-19

申请号：JP12551289

申请日：1989-05-18

Applicant: SONY CORP

Inventor： SUGANO YUKIYASU ,  KOYAMA KAZUHIDE

IPC: C23C14/35

Abstract: PURPOSE:To spread the erosion region at the time of film formation by sputtering to the entire part of the target surface so as to prevent the generation of dust and to form the film with good cleanliness with the reactive magnetron sputtering device by providing a magnetic field generating means for imparting fluctuating magnetic fields to the target. CONSTITUTION:A magnet 13 for imparting the magnetic field H to the target 3 of the magnetron sputtering device which has a substrate 1 to be formed with the film and a cathode 12 consisting of the disk-shaped target 3 and the magnet 13 is formed to a U-shaped section and a relation l1>l2 is provided between the length l1 thereof and the radius l2 of the target 3. In addition, the magnet 13 is rotated around the center of the target 3. The magnetic field H is moved along the surface of the target 3 by this movement and the erosion region 6 of the target is spread over the entire area of the target surface. Since the non-erosion region where sputtering particles restick does no longer exist, the sputtering particles stick in the form of dust onto the substrate 1 and the formation, of the film to a defective state is prevented.

公开(公告)号：JPH02237108A

公开(公告)日：1990-09-19

申请号：JP5825989

申请日：1989-03-10

Applicant: SONY CORP

Inventor： KIYOTA HISAHARU ,  MINEGISHI SHINJI ,  SUGANO YUKIYASU ,  NOGUCHI TAKASHI ,  ENDO SHIHOKO

IPC: H01L21/3213 ,  H01L21/027 ,  H01L21/3205

Abstract: PURPOSE:To suppress a reflection from a substratum film during an exposure operation and to enhance an accuracy of a pattern by a method wherein a photoresist film is formed, via a titanium nitride film containing oxygen and having a specific thickness, on a wiring material formed on a semiconductor substrate and an exposure treatment is executed. CONSTITUTION:A titanium nitride film 11 containing oxygen is formed to be a film thickness of 20 to 30nm on wiring material layers 4, 5 formed on a semiconductor substrate 1; the titanium nitride film 11 containing the oxygen is coated with a photoresist film 6. Then, an exposure operation is executed by using a light source having a wavelength of 436nm and a developing operation is executed; the photoresist film 6 is patterned; the wiring material layers 4, 5 are etched by making use of the patterned resist film 6 as a mask. Since the titanium nitride film containing the oxygen and having a thickness of 20 to 30nm is formed under the photoresist film 6 in this manner, a reflection factor, from a substratum film, of light is lowered during the exposure operation by the light with an exposure wavelength of 436nm. Thereby, a resist pattern of high accuracy is obtained and a wiring pattern whose pattern accuracy is good can be formed.

公开(公告)号：JPH01272764A

公开(公告)日：1989-10-31

申请号：JP10094988

申请日：1988-04-23

Applicant: SONY CORP

Inventor： MINEGISHI SHINJI ,  SUGANO YUKIYASU

IPC: C23C14/34 ,  H01L21/28 ,  H01L21/285

Abstract: PURPOSE:To efficiently form multilayered films dissimilar in composition by disposing targets in a chamber and changing the composition of plural sputter gases at an interval of time. CONSTITUTION:In a sputter chamber 1, a wafer 11 set in a water conveyance part 2 is allowed to confront a Ti target 6 on a treatment electrode 8. A valve 13 is opened and valves 14, 15 are closed, and an Ar gas alone is introduced and the electrode 8 is energized, by which the desired Ti film is formed. Subsequently, the valves 13-15 are opened and respective gases of Ar, N2, and O2 are introduced to form a TiN film on the above Ti film, and further, the valves 14, 15 are closed and a Ti film is formed on the above TiN film. Then, the wafer 11 is allowed to confront an Al (alloy) target 7 on a treatment electrode 9 and the valve 13 alone is opened, by which an Al (alloy) film is formed on the above Ti film to the desired film thickness. By this method, plural films dissimilar in composition can be formed on the wafer 11 continuously with superior efficiency.

公开(公告)号：JPH01238043A

公开(公告)日：1989-09-22

申请号：JP6546788

申请日：1988-03-17

Applicant: SONY CORP

Inventor： SUGANO YUKIYASU ,  KOBAYASHI KAZUYOSHI

IPC: H01L23/522 ,  H01L21/768

Abstract: PURPOSE:To avoid particles by a method wherein, after a wiring layer is formed, ions of metal or the like are implanted into the contact surface between a contact region and the wiring layer to break a natural oxide film in the contact surface. CONSTITUTION:An aluminum wiring layer 3 is formed on the surface of an oxide film 2 on a semiconductor substrate 1. If a contact hole 6 is formed by photoetching after an interlayer insulating film 5 is formed, the contact region 7 of the wiring layer 3 exposed by the contact hole 6 is formed. Then a second layer wiring 8 is formed. If titanium ions Ti are implanted into the contact boundary between the wiring layer 3 and the wiring layer 8, a natural oxide film 4 existing in the contact boundary is broken. After that, the wiring layer 8 is patterned. With this constitution, the possibility of scattering of the broken natural oxide film onto the wiring layer surface can be avoided and a contact resistance can be reduced without increasing the number of particles.