公开(公告)号：DE60133057T2

公开(公告)日：2009-02-26

申请号：DE60133057

申请日：2001-01-03

Applicant: SONY CORP

Inventor： WADA HIROYUKI ,  HIRATA YOSHIMI ,  TAGUCHI AYUMU ,  TATSUKI KOICHI ,  UMEZU NOBUHIKO ,  KUBOTA SHIGEO ,  ABE TETSUO ,  OOSHIMA AKIFUMI ,  HATTORI TADASHI ,  TAKATOKU MAKOTO ,  SUGANO YUKIYASU

IPC: H01L21/263 ,  H01L21/66

Abstract: The state of a polysilicon film formed by excimer laser annealing an amorphous silicon film is to be evaluated. When the amorphous silicon film is annealed to form a polysilicon film, linearity or periodicity presents itself in the spatial structure of the film surface of the polysilicon film formed depending on the energy applied to the amorphous silicon during annealing. This linearity or periodicity is processed as an image and represented numerically from the image by exploiting the linearity or periodicity. The state of the polysilicon film is checked based on the numerical results.

公开(公告)号：DE60133057D1

公开(公告)日：2008-04-17

申请号：DE60133057

申请日：2001-01-03

Applicant: SONY CORP

Inventor： WADA HIROYUKI ,  HIRATA YOSHIMI ,  TAGUCHI AYUMU ,  TATSUKI KOICHI ,  UMEZU NOBUHIKO ,  KUBOTA SHIGEO ,  ABE TETSUO ,  OOSHIMA AKIFUMI ,  HATTORI TADASHI ,  TAKATOKU MAKOTO ,  SUGANO YUKIYASU

IPC: H01L21/263 ,  H01L21/66

Abstract: The state of a polysilicon film formed by excimer laser annealing an amorphous silicon film is to be evaluated. When the amorphous silicon film is annealed to form a polysilicon film, linearity or periodicity presents itself in the spatial structure of the film surface of the polysilicon film formed depending on the energy applied to the amorphous silicon during annealing. This linearity or periodicity is processed as an image and represented numerically from the image by exploiting the linearity or periodicity. The state of the polysilicon film is checked based on the numerical results.

公开(公告)号：JP2002318547A

公开(公告)日：2002-10-31

申请号：JP2001125385

申请日：2001-04-24

Applicant: SONY CORP ,  ST LCD KK

Inventor： SUGANO YUKIYASU ,  TAKAGI YASUSHI ,  MATSUOKA HIROAKI ,  TOMITA HIROSHI

IPC: G02F1/1339 ,  G02F1/1333 ,  G09F9/00 ,  H01L51/50 ,  H05B33/04 ,  H05B33/10 ,  H05B33/14

Abstract: PROBLEM TO BE SOLVED: To reduce the weight and thickness of a display panel without lowering productivity. SOLUTION: The display panel is formed by first performing a panel forming process step in order to manufacture the display panel, flatly shifting a pair of substrates 1 and 2 having a prescribed thickness by a prescribed amount from each other, superposing these substrates and joining a pair of the substrates 1 and 2 across a prescribed spacing in the state of providing the outer peripheries of both substrates 1 and 2 with a step ST along the outer peripheries. In succession, an outer periphery sealing process step is performed and a sealant is supplied to the step ST, by which the display panel of the interior is hermetically closed along the outer peripheries of both substrates 1 and 2. The chemical treatment process step is thereafter performed and the display panel is immersed into a liquid chemical in the state that the panel is protected by a sealant and the surfaces of the substrates 1 and 2 are removed by the specified amount by chemical reaction, thereby, the thickness is reduced. When a pair of the substrates are bonded to each other by shifting the substrates from each other, the since step ST is formed along the outer periphery this part can be stably and easily coated with a sealant by a dispenser 50, The sealant with which the step ST is coated along the same infiltrates the spacing between both substrates 1 and 2 by capillarity and the perfect outer peripheries seal can be formed.

公开(公告)号：JP2002087844A

公开(公告)日：2002-03-27

申请号：JP2000280363

申请日：2000-09-14

Applicant: SONY CORP

Inventor： SUGANO YUKIYASU

IPC: G02F1/13 ,  C03C15/00 ,  C03C23/00 ,  G02F1/1333 ,  H01L21/304 ,  H01L51/50 ,  H05B33/02 ,  H05B33/10 ,  H05B33/14

Abstract: PROBLEM TO BE SOLVED: To realize reduction in weight and thickness of a display panel without reducing substrate size and without lowering productivity. SOLUTION: In order to manufacture the display panel, a panel producing process in which the display panel 1 is made up by using a substrate having prescribed thickness and a chemical treatment process in which the display panel 1 is immersed into a liquid chemical 17 and a definite amount of a substrate surface is removed by a chemical reaction to reduce thickness of the display panel 1, are performed. In the chemical treatment process, a definite amount of the substrate surface is removed while controlling temperature change of the liquid chemical 17 so as to stay within a range of ±5 deg.C from a previously set temperature. In this case, the previously set temperature of the liquid chemical 17 is between 30 deg.C and 60 deg.C. Further a definite amount of the substrate surface is removed while controlling concentration change of the liquid chemical 17 so as to stay within a range of ±5 wt.% from the previously set concentration. In this case, the previously set concentration of the liquid chemical 17 is between 10 wt.% and 30 wt.%. Further a definite amount of the substrate surface is removed while recovering materials deposited by the chemical reaction from in the liquid chemical 17. Further the display panel 1 is-immersed into the liquid chemical 17 while circulating the liquid chemical 17 filled in a vessel 20.

公开(公告)号：JP2000216087A

公开(公告)日：2000-08-04

申请号：JP1249899

申请日：1999-01-20

Applicant: SONY CORP

Inventor： INO MASUMITSU ,  URAZONO TAKENOBU ,  TAKATOKU MASATO ,  SUGANO YUKIYASU ,  FUJINO MASAHIRO ,  MANO MICHIO ,  ASANO AKIHIKO

IPC: H01L21/20 ,  G02F1/136 ,  G02F1/1365 ,  G02F1/1368 ,  H01L21/268 ,  H01L21/336 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To obtain a high-quality polycrystalline thin film by improving a semiconductor thin film crystallizing method using a laser beam. SOLUTION: The semiconductor thin film manufacturing method comprises an anneal step of irradiating a laser beam to convert a semiconductor thin film 4 to a polycrystal after a step of forming the non-single crystal semiconductor thin film 4 on the surface of a substrate 0. In the anneal step a laser beam pulse having an emission time width of 50 ns or more from the rise to fall and a fixed sectional area is at least once irradiated to convert the semiconductor film 4 contained in an irradiating region corresponding to its sectional area en bloc to the polycrystal wherein the energy intensity of the laser beam from the rise to fall is controlled to give desired variations. This enables the polycrystal to be of a large size or to be uniformized. For irradiating the laser beam, the substrate 0 may be disposed in a non-oxidative atmosphere and heated or cooled.

公开(公告)号：JP2000208422A

公开(公告)日：2000-07-28

申请号：JP238799

申请日：1999-01-08

Applicant: SONY CORP

Inventor： SUGANO YUKIYASU ,  KUNII MASABUMI ,  URAZONO TAKENOBU

IPC: H01L29/786 ,  C23C16/24 ,  C23C16/34 ,  C23C16/40 ,  C23C16/54 ,  H01L21/205 ,  H01L21/31 ,  H01L21/316 ,  H01L21/336

Abstract: PROBLEM TO BE SOLVED: To provide a stable laminated layer made of a semiconductor thin film and an insulating film, by reducing a defect in an interface with upper and lower insulating films when a good polycrystal semiconductor thin film is formed in a low temperature process. SOLUTION: When a laminated layer made up of a semiconductor thin film 15 and a lower insulating film 14 is formed on a substrate 11, the semiconductor thin film 15 is grown in a vacuum chamber in a chemical vapor growth (catalytic CVD) by using a catalyst. The insulating film 14 is, as an example, grown in a chemical vapor growth (plasma CVD) using plasma. In this case, the insulating film 14 and the semiconductor thin film 15 are formed continuously without breaking vacuum state.

公开(公告)号：JP2000133811A

公开(公告)日：2000-05-12

申请号：JP30620498

申请日：1998-10-28

Applicant: SONY CORP

Inventor： KUNII MASABUMI ,  SUGANO YUKIYASU ,  URAZONO TAKENOBU

IPC: H01L21/205 ,  H01L21/336 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To improve performance characteristics and reliability of a thin-film transistor by making an insulating film dense. SOLUTION: When a thin-film transistor is formed, a laminated structure is formed on an insulating substrate 0 which structure includes polycrystalline semiconductor thin film 5, a gate oxide film 3 which is in contact with one surface side of the thin film, and a gate electrode 1 stacked on the semiconductor thin film 5 via the gate oxide film 3. In this case, the gate oxide film 3 is formed by a catalytic chemical vapor deposition method, wherein insulating material is formed by bringing material gas into contact with a heated catalyzer. An etching stopper film 6, which is an insulating layer coming into contact with the upper surface of the polycrystalline semiconductor thin film 5, is also formed at the same time by the catalystic chemical vapor deposition method, and dense structure is obtained.

公开(公告)号：JPH11330199A

公开(公告)日：1999-11-30

申请号：JP13562198

申请日：1998-05-18

Applicant: SONY CORP

Inventor： SUGANO YUKIYASU ,  AIBA TAKESHI

IPC: H01L21/677 ,  H01L21/02 ,  H01L21/68

Abstract: PROBLEM TO BE SOLVED: To provide small-sized vacuum process equipment at a low cost which is capable of coping with small amount production of many kinds of articles. SOLUTION: This equipment is constituted by arranging a process chamber 1, a transfer chamber 2 and a load locking chamber 3 in this order in a line. The transfer chamber 2 is equipped with transfer mechanism 20, which is used for rectilinearly transfer a work W in the plan view and consists of an arm retaining part 21, a pair of driving motors 22A, 22B, a holding stage 25 for holding the work W, and link mechanism L1 , L2 constituted of four arms (first arms 23A, 23B and second arms 24A, 24B) for transferring drive forces of the driving motors 22A, 22B to the holding stage 25. When the driving motors 22A, 22B are driven in the opposite directions with the same timing, the link mechanism L1 , L2 expand and contact. Linking with the motion, the holding stage 25 holding the work W moves rectilinearly.

公开(公告)号：JPH07176531A

公开(公告)日：1995-07-14

申请号：JP32183393

申请日：1993-12-21

Applicant: SONY CORP

Inventor： SUGANO YUKIYASU ,  HOSHINO KAZUHIRO

IPC: H01L21/3205 ,  H01L23/52

Abstract: PURPOSE:To provide a low-resistance wiring structure having high resistance to electromigration by a method wherein troubles such as a contact failure and oxidation which are liable to occur in a low-resistance wiring of Cu, Ag, or Au are solved. CONSTITUTION:A first method: all the surface of a wiring of low-resistance wiring material 3 such as Cu, Ag, or Au formed on a substrate 1 is covered with Al films or alloy films 2, 4, and 60 mainly composed of Al to constitute a wiring structure. A second method: a wiring composed of low-resistance wiring material covered with an Al film or an alloy film is formed on a substrate and then coated with an Al film or an alloy film mainly composed of Al again. A third process: a groove is cut in a lower insulating film, and Al or alloy mainly composed of Al and low-resistance material are filled into the groove to form a low-resistance wiring structure.

公开(公告)号：JPH0766157A

公开(公告)日：1995-03-10

申请号：JP23733793

申请日：1993-08-30

Applicant: SONY CORP

Inventor： SUGANO YUKIYASU

IPC: H01L21/28 ,  H01L21/768 ,  H01L23/522

Abstract: PURPOSE:To provide a method for forming a wiring in which delamination does not take place in the process for forming a wiring of high melting point metal and generation of particles is prevented. CONSTITUTION:A metallic layer 4 of Ti, for example, is formed at a contact part and a barrier metal layer 5 is formed thereon followed by formation of high melting point metal layer 6 of Blk-W, for example, by CVD. In such method for forming a wiring, an anti-oxidation layer 8 is formed, under the underlying metal layer 4, of a metal, e.g. Al, having higher standard generation energy than the metal layer 4 or of an insulation film of SiN, for example, containing no oxygen.