公开(公告)号：FR2864729B1

公开(公告)日：2006-05-05

申请号：FR0315480

申请日：2003-12-29

Applicant: ST MICROELECTRONICS SA

Inventor： CARPENTIER JEAN FRANCOIS ,  TILHAC CYRILLE ,  BELOT DIDIER

IPC: H03H9/17 ,  H03H3/04 ,  H03J3/18 ,  H03J3/20 ,  H03J3/24 ,  H03L5/00 ,  H03L7/00

Abstract: The circuit has a bulk acoustic resonator (212) with two resonance frequencies. An inductor (213) cancels the one of the resonance frequencies. A capacitance adjusting unit (211), e.g. a varactor, allows the tuning of the resonator to be adjusted at the other resonant frequency. The inductor is placed in series with the resonator and adjusted at a series resonance frequency of the resonator to reinforce adjustment at the parallel-resonant frequency. An independent claim is also included for a method of fabricating an integrated circuit including an acoustic resonator component.

公开(公告)号：FR2864729A1

公开(公告)日：2005-07-01

申请号：FR0315480

申请日：2003-12-29

Applicant: ST MICROELECTRONICS SA

Inventor： CARPENTIER JEAN FRANCOIS ,  TILHAC CYRILLE ,  BELOT DIDIER

IPC: H03J3/18 ,  H03J3/20 ,  H03J3/24 ,  H03L5/00 ,  H03L7/00 ,  H03H9/17 ,  H03H3/04

Abstract: The circuit has a bulk acoustic resonator (212) with two resonance frequencies. An inductor (213) cancels the one of the resonance frequencies. A capacitance adjusting unit (211), e.g. a varactor, allows the tuning of the resonator to be adjusted at the other resonant frequency. The inductor is placed in series with the resonator and adjusted at a series resonance frequency of the resonator to reinforce adjustment at the parallel-resonant frequency. An independent claim is also included for a method of fabricating an integrated circuit including an acoustic resonator component.

公开(公告)号：FR2819938B1

公开(公告)日：2003-05-30

申请号：FR0100818

申请日：2001-01-22

Applicant: ST MICROELECTRONICS SA

Inventor： CARPENTIER JEAN FRANCOIS

IPC: H01L21/02 ,  H01L27/08 ,  H01L27/00 ,  H01F27/00 ,  H01F27/28

公开(公告)号：FR2819937A1

公开(公告)日：2002-07-26

申请号：FR0100819

申请日：2001-01-22

Applicant: ST MICROELECTRONICS SA

Inventor： CARPENTIER JEAN FRANCOIS

IPC: H01L23/522 ,  H01L23/66 ,  H01L25/522 ,  H01L23/64

Abstract: A semiconductor device with integrated circuits comprising stacked layers which are provided at different levels on top of a substrate, comprising: - a metal strip (3) which is disposed in a reference layer and through which an electrical current flows; a metal ground plane (4) which is disposed in a layer below the reference layer and is provided with a slit (5) that extends below and alongside said strip; an electrostatic screen (6) which is disposed in a layer above the ground plane and comprises multiple spaced bands (7) made out of an electrically conductive material and which extend through said slit; conductive paths (4a, 4b) which are used to electrically connect the ends of each band to the parts of the ground plane located on either side of the slit thereof.