公开(公告)号：DE60301848D1

公开(公告)日：2006-02-23

申请号：DE60301848

申请日：2003-11-14

Applicant: ST MICROELECTRONICS SA

Inventor： POVEDA PATRICK

IPC: H01L21/308 ,  H01L21/334 ,  H01L21/762 ,  H01L21/8242

Abstract: Narrow trench formation in silicon substrate comprises: (a) engraving to form first trenches separated by silicon ribs; (b) oxidation to form oxide layer to form second trenches and ribs; (c) filling second trenches; (d) engraving oxide to top of second ribs, retaining oxide between material fingers and ribs; (e) removing second ribs and material fingers; (f) oxide engraving to uncover substrate, retaining oxide fingers; (g) engraving substrate to form narrow trenches. Formation of narrow trenches in a silicon substrate (1) comprises: (a) engraving the substrate to form first trenches separated by first ribs of silicon; (b) thermal oxidation of the substrate to form a layer of silicon oxide around the substrate, in order to form some second trenches and some second ribs of silicon; (c) filling of the second trenches with some fingers of an engravable material; (d) engraving of the oxide up to the upper surface of the second ribs whilst conserving portions of the oxide between the fingers of material and the second ribs; (e) elimination of the second ribs of silicon and the fingers of material; (f) the engraving of the oxide to uncover the substrate at the bottom of the oxide portions, conserving the fingers of oxide; (g) engraving of the substrate to form narrow trenches in the substrate.

公开(公告)号：FR2844921B1

公开(公告)日：2006-02-10

申请号：FR0211848

申请日：2002-09-25

Applicant: ST MICROELECTRONICS SA

Inventor： POVEDA PATRICK

IPC: H01G7/00 ,  H01L29/93 ,  H01L29/41 ,  H01L29/94

Abstract: The capacitance has an electrode (20) formed of all ribs protruding from a substrate, of portions of the substrate underlying the ribs and of portions of the substrate separating the bases of two ribs. Another electrode is superposed to one portion of the previous electrode, where the ribs are irregular in terms of planar base surface area. The ribs are arranged in quincunx.

公开(公告)号：FR2864345A1

公开(公告)日：2005-06-24

申请号：FR0351110

申请日：2003-12-18

Applicant: ST MICROELECTRONICS SA

Inventor： POVEDA PATRICK

IPC: H01L21/329 ,  H01L29/06 ,  H01L29/40 ,  H01L29/872

Abstract: Formation of a component of the Trench MOS Barrier Schottky (TMBS) type of which the periphery is made up of a trench with insulated walls filled with a conductor, comprises: (a) depositing on a semiconductor substrate a thick layer (23) of a first insulating material and a thin layer (24) of a second material; (b) hollowing simultaneously a peripheral trench and the trenches (26) of the component; (c) isotropically engraving of the first material to leave a cap (29) overhanging a cavity (28); (d) forming a thin insulating layer (30); (e) filling the trenches and the cavity with a conducting material; (f) engraving the layer of conducting material and the thin insulating layer to uncover the surface of the semiconducting layer between two trenches and the cavity. Independent claims are also included for: (i) the formation of a Schottky diode; (ii) a component of the TMBS type.

公开(公告)号：FR2829616B1

公开(公告)日：2004-03-12

申请号：FR0111680

申请日：2001-09-10

Applicant: ST MICROELECTRONICS SA

Inventor： COLLARD EMMANUEL ,  POVEDA PATRICK

IPC: H01L29/861 ,  H01L29/868 ,  H01L23/488