公开(公告)号：FR2857506A1

公开(公告)日：2005-01-14

申请号：FR0350325

申请日：2003-07-11

Applicant: ST MICROELECTRONICS SA

Inventor： MORAND JEAN LUC ,  COLLARD EMMANUEL ,  LHORTE ANDRE

IPC: H01L27/07 ,  H01L27/08 ,  H01L29/47 ,  H01L29/861 ,  H01L29/872 ,  H01L21/329

Abstract: The diode is formed in a semiconductor layer (32) that is weakly doped and resting on a substrate (31) that is strongly doped. The substrate has an annular region (35) that is more strongly doped than the layer and weakly doped than the substrate. Another annular region (39) extends to a surface of the region (35). An electrode with a thin layer forms a Schottky junction with the layer and rests on a portion of the region (39). An independent claim is also included for a process of forming a power diode on a substrate of single-crystal silicon.

公开(公告)号：FR2829616A1

公开(公告)日：2003-03-14

申请号：FR0111680

申请日：2001-09-10

Applicant: ST MICROELECTRONICS SA

Inventor： COLLARD EMMANUEL ,  POVEDA PATRICK

IPC: H01L29/861 ,  H01L29/868 ,  H01L23/488

Abstract: A vertical diode with front face mounting and of low capacity in a semiconductor substrate (1) comprises: (a) a projecting first zone incorporating at least one semiconducting layer (3) doped with a conductivity type opposite to that of the substrate, the upper surface of the semiconducting layer carrying a first solder bead (23); and (b) a second zone incorporating on the substrate a thin conducting track (16) carrying at least two second solder beads (24). The first and second solder beads define a plane parallel to the plane of the substrate. An Independent claim is also included for the formation of a vertical diode with front face mounting and low capacity in a semiconductor substrate.

公开(公告)号：FR2816113A1

公开(公告)日：2002-05-03

申请号：FR0014012

申请日：2000-10-31

Applicant: ST MICROELECTRONICS SA

Inventor： COLLARD EMMANUEL

IPC: H01L21/04 ,  H01L29/872 ,  H01L21/329

Abstract: The invention concerns a method for making a vertical Schottky diode on a highly doped N-type silicon carbide substrate (1), comprising steps which consist in forming an N-type lightly doped epitaxial layer (2); etching out a peripheral trench at the active zone of the diode; forming a type P doped epitaxial layer; carrying out a planarization process so that a ring (6) of the P type epitaxial layer remains in the trench; forming an insulating layer (3) on the outer periphery of the component, said insulating layer partly covering said ring; and depositing a metal (4) capable of forming a Schottky barrier with the N type epitaxial layer.

公开(公告)号：FR2803103A1

公开(公告)日：2001-06-29

申请号：FR9916490

申请日：1999-12-24

Applicant: ST MICROELECTRONICS SA

Inventor： COLLARD EMMANUEL ,  LHORTE ANDRE

IPC: H01L21/329 ,  H01L29/24 ,  H01L29/872

公开(公告)号：DE602004016918D1

公开(公告)日：2008-11-20

申请号：DE602004016918

申请日：2004-07-09

Applicant: ST MICROELECTRONICS SA

Inventor： MORAND JEAN-LUC ,  COLLARD EMMANUEL ,  LHORTE ANDRE

IPC: H01L29/872 ,  H01L21/329 ,  H01L27/07 ,  H01L27/08 ,  H01L29/47 ,  H01L29/861

Abstract: The diode is formed in a semiconductor layer (32) that is weakly doped and resting on a substrate (31) that is strongly doped. The substrate has an annular region (35) that is more strongly doped than the layer and weakly doped than the substrate. Another annular region (39) extends to a surface of the region (35). An electrode with a thin layer forms a Schottky junction with the layer and rests on a portion of the region (39). An independent claim is also included for a process of forming a power diode on a substrate of single-crystal silicon.

公开(公告)号：FR2814855B1

公开(公告)日：2003-10-31

申请号：FR0012596

申请日：2000-10-03

Applicant: ST MICROELECTRONICS SA

Inventor： DEFIVES DOMINIQUE ,  NOBLANC OLIVIER ,  COLLARD EMMANUEL

IPC: H01L21/04 ,  H01L29/24 ,  H01L29/47 ,  H01L29/872 ,  H01L21/28 ,  H01L21/306

公开(公告)号：FR2814856A1

公开(公告)日：2002-04-05

申请号：FR0012601

申请日：2000-10-03

Applicant: ST MICROELECTRONICS SA

Inventor： COLLARD EMMANUEL ,  DEFIVES DOMINIQUE ,  NOBLANC OLIVIER

IPC: H01L21/04 ,  H01L21/329 ,  H01L29/45 ,  H01L29/872

Abstract: A method for the production of an ohmic contact on a substrate of silicon carbide consists of depositing a layer (2) of titanium silicide (TiSi2) on the substrate (1) and annealing at a temperature of 500 - 800 deg C. An Independent claim is included for the production of a Schottky diode by this method.

公开(公告)号：FR2829616B1

公开(公告)日：2004-03-12

申请号：FR0111680

申请日：2001-09-10

Applicant: ST MICROELECTRONICS SA

Inventor： COLLARD EMMANUEL ,  POVEDA PATRICK

IPC: H01L29/861 ,  H01L29/868 ,  H01L23/488

公开(公告)号：FR2803103B1

公开(公告)日：2003-08-29

申请号：FR9916490

申请日：1999-12-24

Applicant: ST MICROELECTRONICS SA

Inventor： COLLARD EMMANUEL ,  LHORTE ANDRE

IPC: H01L21/329 ,  H01L29/24 ,  H01L29/872

公开(公告)号：FR2814855A1

公开(公告)日：2002-04-05

申请号：FR0012596

申请日：2000-10-03

Applicant: ST MICROELECTRONICS SA

Inventor： DEFIVES DOMINIQUE ,  NOBLANC OLIVIER ,  COLLARD EMMANUEL

IPC: H01L21/04 ,  H01L29/24 ,  H01L29/47 ,  H01L29/872 ,  H01L21/28 ,  H01L21/306

Abstract: A Schottky junction presenting a stable live gate height of the order of 0.8 to 1 volt on a layer of silicon carbide incorporates a layer of refractory metal nitride on this layer of silicon carbide. An Independent claim is included for a method for the formation of such a Schottky junction on a silicon carbide substrate.