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    PLAQUETTE MUNIE DE CONDUCTEURS TRANSVERSES ET APPLICATION A UNE PILE A COMBUSTIBLE
    11.
    发明专利
    PLAQUETTE MUNIE DE CONDUCTEURS TRANSVERSES ET APPLICATION A UNE PILE A COMBUSTIBLE 未知

    公开(公告)号：FR2880200A1

    公开(公告)日：2006-06-30

    申请号：FR0453228

    申请日：2004-12-24

    Applicant: ST MICROELECTRONICS SA

    Inventor： ROY MATHIEU ,  PIERRE FABIEN

    IPC: H01M8/10 ,  H01M8/02

    Abstract: L'invention concerne une plaquette mince comprenant des trous traversants remplis au moins partiellement de nanotubes de carbone conducteurs orientés généralement transversalement à la plaquette. L'invention s'applique à une cellule de pile à combustible comprenant, dans une plaquette mince (20), un trou traversant rempli d'un électrolyte (24 ; 25) entouré de barrières de nanotubes de carbone (22, 26 ; 23, 27) orientés généralement transversalement à la plaquette.

    13.
    发明专利
    未知

    公开(公告)号：FR2803101A1

    公开(公告)日：2001-06-29

    申请号：FR9916487

    申请日：1999-12-24

    Applicant: ST MICROELECTRONICS SA

    Inventor： ROY MATHIEU

    IPC: H01L21/332 ,  H01L21/225 ,  H01L21/331 ,  H01L21/76 ,  H01L21/761 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/74 ,  H01L29/78 ,  H01L21/48

    Abstract: A method for manufacturing a vertical power component on a substrate formed of a lightly-doped silicon wafer, including the steps of boring on the lower surface side of the substrate a succession of holes perpendicular to this surface; diffusing a dopant from the holes, of a second conductivity type opposite to that of the substrate; and boring similar holes on the upper surface side of the substrate to define an isolating wall and diffuse from these holes a dopant of the second conductivity type with a high doping level, the holes corresponding to the isolating wall being sufficiently close for the diffused areas to join laterally and vertically.

    14.
    发明专利
    未知

    公开(公告)号：FR2784801A1

    公开(公告)日：2000-04-21

    申请号：FR9813219

    申请日：1998-10-19

    Applicant: ST MICROELECTRONICS SA

    Inventor： ROY MATHIEU

    IPC: H01L29/06 ,  H01L29/40 ,  H01L29/861 ,  H01L29/36 ,  H01L21/761

    Abstract: The power component comprises an n-type silicon substrate (1) bounded by a p-type barrier (2) in connection with the first p-type region (3), the second p-type region (4), a strip conductor (L) extending over the substrate from the second region (4) to the barrier (2), the third region (22) of strongly doped n-type midway between the exterior periphery of the second region and the interior periphery of the barrier. The third region (22) is in contact with the field plate (21) which extends in the directions of the barrier and the second region. The high voltage is sustained between the first and the second regions, on the upper side by the junction between the second region and the substrate, and the junction between the barrier and the substrate. The strip conductor (L) is at a higher potential. The field plate (21) extends over the third region (22) over a distance greater than 10 microns m. The second region (4) includes a ring (6) of weakly doped p-type. The width of the field plate is at least that of the strip conductor, and the length extends over the third region in both directions of the barrier and the second region.

    16.
    发明专利
    未知

    公开(公告)号：FR2803101B1

    公开(公告)日：2002-04-12

    申请号：FR9916487

    申请日：1999-12-24

    Applicant: ST MICROELECTRONICS SA

    Inventor： ROY MATHIEU

    IPC: H01L21/332 ,  H01L21/225 ,  H01L21/331 ,  H01L21/76 ,  H01L21/761 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/74 ,  H01L29/78 ,  H01L21/48

    Abstract: A method for manufacturing a vertical power component on a substrate formed of a lightly-doped silicon wafer, including the steps of boring on the lower surface side of the substrate a succession of holes perpendicular to this surface; diffusing a dopant from the holes, of a second conductivity type opposite to that of the substrate; and boring similar holes on the upper surface side of the substrate to define an isolating wall and diffuse from these holes a dopant of the second conductivity type with a high doping level, the holes corresponding to the isolating wall being sufficiently close for the diffused areas to join laterally and vertically.

    17.
    发明专利
    未知

    公开(公告)号：FR2784801B1

    公开(公告)日：2000-12-22

    申请号：FR9813219

    申请日：1998-10-19

    Applicant: ST MICROELECTRONICS SA

    Inventor： ROY MATHIEU

    IPC: H01L29/06 ,  H01L29/40 ,  H01L29/861 ,  H01L29/36 ,  H01L21/761

    Abstract: The power component comprises an n-type silicon substrate (1) bounded by a p-type barrier (2) in connection with the first p-type region (3), the second p-type region (4), a strip conductor (L) extending over the substrate from the second region (4) to the barrier (2), the third region (22) of strongly doped n-type midway between the exterior periphery of the second region and the interior periphery of the barrier. The third region (22) is in contact with the field plate (21) which extends in the directions of the barrier and the second region. The high voltage is sustained between the first and the second regions, on the upper side by the junction between the second region and the substrate, and the junction between the barrier and the substrate. The strip conductor (L) is at a higher potential. The field plate (21) extends over the third region (22) over a distance greater than 10 microns m. The second region (4) includes a ring (6) of weakly doped p-type. The width of the field plate is at least that of the strip conductor, and the length extends over the third region in both directions of the barrier and the second region.

    SUPPORT DE PILE A COMBUSTIBLE INTEGREE
    19.
    发明专利
    SUPPORT DE PILE A COMBUSTIBLE INTEGREE 未知

    公开(公告)号：FR2894075A1

    公开(公告)日：2007-06-01

    申请号：FR0553634

    申请日：2005-11-30

    Applicant: ST MICROELECTRONICS SA

    Inventor： PIERRE FABIEN ,  ROY MATHIEU

    IPC: H01M8/02 ,  B81C1/00

    Abstract: L'invention concerne une plaque support de cellule de pile à combustible constituée d'une plaquette de silicium (21) ayant une face avant portant la partie active de la cellule en regard de laquelle est percée une multitude de canaux transverses (23). La face arrière de la plaquette est munie d'un évidement (22) en regard de la région perforée.

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