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    Fuel cell and wafer
    1.
    发明专利
    Fuel cell and wafer 审中-公开
    燃料电池和散热器

    公开(公告)号：JP2007095697A

    公开(公告)日：2007-04-12

    申请号：JP2006264894

    申请日：2006-09-28

    Applicant: St Microelectronics Sa ,  エス テ マイクロエレクトロニクス エス アー

    Inventor： KOUASSI SEBASTIEN ,  ROY MATHIEU

    IPC: H01M8/02 ,  H01M8/04 ,  H01M8/10

    CPC classification number: H01M8/04171 ,  B82Y30/00 ,  H01M4/8657 ,  H01M8/04067 ,  H01M8/04291 ,  H01M8/1097 ,  H01M2004/8689

    Abstract: PROBLEM TO BE SOLVED: To provide a fuel cell with an electrolyte which does not dry. SOLUTION: There is provided the fuel cell wherein first and second catalyst layers 5, 7 respectively laminated on both sides of an electrolyte layer 6 are connected with an anode 10 and a cathode 12, respectively, hydrogen is provided for the first catalyst layer 5 and oxygen is provided for the second catalyst layer 7, a hydrophilic layer 20 is provided so as to cover the second catalyst layer 7 and oxygen is supplied to the second catalyst layer 7 through the hydrophilic layer 20. COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题：为燃料电池提供不干燥的电解质。 解决方案：提供了分别层叠在电解质层6的两侧上的第一和第二催化剂层5,7分别与阳极10和阴极12连接的燃料电池，为第一催化剂提供氢 为第二催化剂层7提供第5层和氧气，设置亲水层20以覆盖第二催化剂层7，并通过亲水层20向第二催化剂层7供给氧。 C）2007，JPO＆INPIT

    3.
    发明专利
    未知

    公开(公告)号：FR2809227A1

    公开(公告)日：2001-11-23

    申请号：FR0006300

    申请日：2000-05-17

    Applicant: ST MICROELECTRONICS SA

    Inventor： ROY MATHIEU

    IPC: H01L21/331 ,  H01L23/31 ,  H01L29/06 ,  H01L29/417 ,  H01L29/732 ,  H01L29/74 ,  H01L21/30

    Abstract: A power component formed in an N-type silicon substrate, the lower and upper surfaces of which respectively include a first and a second P-type region that do not extend to the component periphery, a high voltage being capable of existing between the first and second regions and having to be withstood by the junctions between the first and second regions and the substrate. A deep insulating region that does not join the first region is provided at the lower periphery of the component, the lower surface of the substrate between said deep insulating region and the first region being coated with an insulating layer, the height of the deep insulating region being greater than that of a possible soldering upward extension formed during the soldering of the lower surface on a heat sink.

    Semiconductor power component bearing connections, comprises series of trenches in silicon substrate filled with insulation below strip conductor
    5.
    发明专利
    Semiconductor power component bearing connections, comprises series of trenches in silicon substrate filled with insulation below strip conductor 未知

    公开(公告)号：FR2785090A1

    公开(公告)日：2000-04-28

    申请号：FR9813542

    申请日：1998-10-23

    Applicant: ST MICROELECTRONICS SA

    Inventor： ROY MATHIEU

    IPC: H01L21/761 ,  H01L21/762 ,  H01L29/06 ,  H01L29/732 ,  H01L29/74

    Abstract: The power component is formed in an n-type silicon substrate (1) comprising a p-type wall or barrier (2) extending to a lower face p-type region, an upper weakly doped p-type region (6) extending to an upper face p-type region, an insulating layer (8), a strip conductor (L) extending above the substrate between the weakly doped region (6) and the wall (2), and a series of trenches (31) filled with an insulation (32), preferably that of the insulating layer. A higher voltage can be sustained between upper and lower faces p-type regions, and is born on the upper side by the junction between the p-type region and the substrate, or between the wall and the substrate, with the strip conductor (L) at higher potential. The depth of trenches is about 3-5 micro m, and the width is about 1.5-3 micro m. The spacing between trenches is 10-30 micro m, and the trenches extend in the substrate to the periphery of the component.

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