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    13.
    发明专利
    未知

    公开(公告)号：DE69226831D1

    公开(公告)日：1998-10-08

    申请号：DE69226831

    申请日：1992-07-23

    Applicant: ST MICROELECTRONICS SRL ,  MAGNETI MARELLI SPA

    Inventor： MAZZUCCO MICHELANGELO ,  POLETTO VANNI ,  MORELLI MARCO

    IPC: G01N27/409 ,  H03F3/45

    Abstract: In order to achieve a high input dynamic range as well as high CMRR and PSRR values and input impedance with the use of a single supply voltage (Vcc), the amplifier includes an input stage with two transistors (Q1, Q2) which are biased by a constant current (IP3, IP4), preferably of less than 1 microampere, and the collectors of the transistors (Q1, Q2) are kept at fixed reference voltages (VR1, VR2). The input signal (VIN) applied between the emitters (IN(-), IN(+)) of the transistors (Q1, Q2) is transferred to the terminals of a first resistor (R1) which is supplied with current (IR1) from a circuit (M7, A5, R3; M10, Q6, R4; M9, Q7, R5) which mirrors the current (IR1) into a second resistor (R6), from the terminals of which the output signal (VOUT) is taken. The preferred application is for forming interfaces for lambda probes fitted to catalytic converters for motor vehicles.

    18.
    发明专利
    未知

    公开(公告)号：DE69227244T2

    公开(公告)日：1999-03-04

    申请号：DE69227244

    申请日：1992-07-28

    Applicant: ST MICROELECTRONICS SRL

    Inventor： POLETTO VANNI ,  MORELLI MARCO

    IPC: H01L29/73 ,  G05F1/569 ,  H01L21/331 ,  H03K17/0422 ,  G05F1/56 ,  H03K17/04

    Abstract: Saturation of a bipolar power transistor is controlled by sensing the current which is eventually injected into the substrate of the integrated circuit by the saturating transistor and using this signal for exerting a limiting action on the current which is driven to the base of the power transistor by a dedicated driving circuit. Differently from the prior art antisaturation systems, it is no longer necessary to precisely monitor the operating voltages across the terminals of the bipolar power transistor. A suitable sensing resistance may be integrated conveniently at a distance from the often complex integrated structure of the bipolar transistor. The system of the invention offers numerous advantages and ensures intervention of the antisaturation circuit only when the power transistor has positively reached a state of saturation, but well before any unwanted consequence.

    19.
    发明专利
    未知

    公开(公告)号：ES2120974T3

    公开(公告)日：1998-11-16

    申请号：ES92112639

    申请日：1992-07-23

    Applicant: ST MICROELECTRONICS SRL ,  MAGNETI MARELLI SPA

    Inventor： MAZZUCCO MICHELANGELO ,  POLETTO VANNI ,  MORELLI MARCO

    IPC: G01N27/409 ,  H03F3/45

    Abstract: In order to achieve a high input dynamic range as well as high CMRR and PSRR values and input impedance with the use of a single supply voltage (Vcc), the amplifier includes an input stage with two transistors (Q1, Q2) which are biased by a constant current (IP3, IP4), preferably of less than 1 microampere, and the collectors of the transistors (Q1, Q2) are kept at fixed reference voltages (VR1, VR2). The input signal (VIN) applied between the emitters (IN(-), IN(+)) of the transistors (Q1, Q2) is transferred to the terminals of a first resistor (R1) which is supplied with current (IR1) from a circuit (M7, A5, R3; M10, Q6, R4; M9, Q7, R5) which mirrors the current (IR1) into a second resistor (R6), from the terminals of which the output signal (VOUT) is taken. The preferred application is for forming interfaces for lambda probes fitted to catalytic converters for motor vehicles.

    20.
    发明专利
    未知

    公开(公告)号：DE69227244D1

    公开(公告)日：1998-11-12

    申请号：DE69227244

    申请日：1992-07-28

    Applicant: ST MICROELECTRONICS SRL

    Inventor： POLETTO VANNI ,  MORELLI MARCO

    IPC: H01L29/73 ,  G05F1/569 ,  H01L21/331 ,  H03K17/0422 ,  G05F1/56 ,  H03K17/04

    Abstract: Saturation of a bipolar power transistor is controlled by sensing the current which is eventually injected into the substrate of the integrated circuit by the saturating transistor and using this signal for exerting a limiting action on the current which is driven to the base of the power transistor by a dedicated driving circuit. Differently from the prior art antisaturation systems, it is no longer necessary to precisely monitor the operating voltages across the terminals of the bipolar power transistor. A suitable sensing resistance may be integrated conveniently at a distance from the often complex integrated structure of the bipolar transistor. The system of the invention offers numerous advantages and ensures intervention of the antisaturation circuit only when the power transistor has positively reached a state of saturation, but well before any unwanted consequence.

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