公开(公告)号：WO2009126344A2

公开(公告)日：2009-10-15

申请号：PCT/US2009031115

申请日：2009-01-15

Applicant: STC UNM ,  EPSTEIN RICHARD I ,  MALLOY KEVIN J

Inventor： EPSTEIN RICHARD I ,  MALLOY KEVIN J

IPC: H01L35/32 ,  H01L39/18

CPC classification number: H01L37/02 ,  F25B21/00 ,  F25B2321/001 ,  Y02B30/66 ,  Y10T29/49359

Abstract: In accordance with the invention, there are electrocaloric devices, pyroelectric devices and methods of forming them. A device which can be a pyroelectric energy generator or an electrocaloric cooling device, can include a first reservoir at a first temperature and a second reservoir at a second temperature, wherein the second temperature is higher than the first temperature. The device can also include a plurality of liquid crystal thermal switches disposed between the first reservoir and the second reservoir and one or more active layers disposed between the first reservoir and the second reservoir, such that each of the one or more active layers is sandwiched between two liquid crystal thermal switches. The device can further include one or more power supplies to apply voltage to the plurality of liquid crystal thermal switches and the one or more the active layers.

Abstract translation: 根据本发明，存在电热装置，热电装置及其形成方法。 可以是热电能发生器或电热冷却装置的装置可以包括处于第一温度的第一贮存器和处于第二温度的第二贮存器，其中第二温度高于第一温度。 该装置还可以包括设置在第一储存器和第二储存器之间的多个液晶热开关以及设置在第一储存器和第二储存器之间的一个或多个活性层，使得一个或多个活性层中的每一个夹在 两个液晶热敏开关。 该装置可以进一步包括一个或多个电源，以向多个液晶热开关和一个或多个有源层施加电压。

公开(公告)号：WO2005041366A2

公开(公告)日：2005-05-06

申请号：PCT/US2004035293

申请日：2004-10-22

Applicant: STC UNM ,  GRAY ALLEN L ,  STINTZ ANDREAS ,  MALLOY KEVIN J ,  LESTER LUKE F ,  VARANGIS PETROS M

Inventor： GRAY ALLEN L ,  STINTZ ANDREAS ,  MALLOY KEVIN J ,  LESTER LUKE F ,  VARANGIS PETROS M

IPC: H01L21/20 ,  H01L29/06 ,  H01S20060101 ,  H01S5/22 ,  H01S5/34 ,  H01S5/343 ,  H01S

CPC classification number: B82Y10/00 ,  B82Y20/00 ,  H01L21/02392 ,  H01L21/02433 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02546 ,  H01S5/2201 ,  H01S5/3412 ,  H01S5/34366 ,  H01S2304/02

Abstract: Symmetric quantum dots are embedded in quantum wells. The symmetry is achieved by using slightly off-axis substrates and/or overpressure during the quantum dot growth. The quantum dot structure can be used in a variety of applications, including semiconductor lasers.

Abstract translation: 对称量子点嵌入在量子阱中。 通过在量子点生长期间使用稍微离轴的衬底和/或超压实现对称性。 量子点结构可用于各种应用，包括半导体激光器。

公开(公告)号：WO0225705A3

公开(公告)日：2003-08-14

申请号：PCT/US0129561

申请日：2001-09-21

Applicant: STC UNM

Inventor： STINTZ ANDREAS ,  VARANGIS PETROS N ,  MALLOY KEVIN J ,  LESTER LUKE F ,  NEWELL TIMOTHY C ,  LI HUA

IPC: H01L29/06 ,  H01S5/12 ,  H01S5/14 ,  H01S5/183 ,  H01S5/34 ,  H01S5/343 ,  H01S5/40

CPC classification number: B82Y30/00 ,  B82Y10/00 ,  B82Y20/00 ,  H01S5/1228 ,  H01S5/143 ,  H01S5/183 ,  H01S5/3201 ,  H01S5/34 ,  H01S5/341 ,  H01S5/3412 ,  H01S5/4031 ,  H01S5/4043 ,  H01S5/4087

Abstract: Quantum dot active region structures are disclosed. In a preferred embodiment, the distribution in dot size and the sequence of optical transition energy values associated with the quantum confined states of the dots are selected to facilitate forming a continuous optical gain spectrum over an extended wavelength range. In one embodiment, the quantum dots are self-assembled quantum dots with a length-to-width ratio of at least three along the growth plane. In one embodiment, the quantum dots are formed in quantum wells for improved carrier confinement. In other embodiments, the quantum dots are used as the active region in laser devices, including tunable lasers and monolithic multi-wavelength laser arrays.

Abstract translation: 公开了量子点有源区结构。 在优选实施例中，选择与点的量子限制状态相关联的点尺寸分布和光跃迁能量值序列，以便于在扩展的波长范围内形成连续的光学增益谱。 在一个实施例中，量子点是沿着生长平面具有至少三个长度 - 宽度比的自组装量子点。 在一个实施例中，在量子阱中形成量子点以改善载流子限制。 在其他实施例中，量子点用作激光器件中的有源区域，包括可调激光器和单片多波长激光器阵列。

公开(公告)号：WO0225705A9

公开(公告)日：2002-08-15

申请号：PCT/US0129561

申请日：2001-09-21

Applicant: STC UNM

Inventor： STINTZ ANDREAS ,  VARANGIS PETROS N ,  MALLOY KEVIN J ,  LESTER LUKE F ,  NEWELL TIMOTHY C ,  LI HUA

IPC: H01L29/06 ,  H01S5/12 ,  H01S5/14 ,  H01S5/183 ,  H01S5/34 ,  H01S5/343 ,  H01S5/40 ,  H01L

CPC classification number: B82Y30/00 ,  B82Y10/00 ,  B82Y20/00 ,  H01S5/1228 ,  H01S5/143 ,  H01S5/183 ,  H01S5/3201 ,  H01S5/34 ,  H01S5/341 ,  H01S5/3412 ,  H01S5/4031 ,  H01S5/4043 ,  H01S5/4087

Abstract: Quantum dot active region structures are disclosed. In a preferred embodiment, the distribution in dot size and the sequence of optical transition energy values associated with the quantum confined states of the dots are selected to facilitate forming a continuous optical gain spectrum over an extended wavelength range. In one embodiment, the quantum dots are self-assembled quantum dots with a length-to-width ratio of at least three along the growth plane. In one embodiment, the quantum dots are formed in quantum wells for improved carrier confinement. In other embodiments, the quantum dots are used as the active region in laser devices, including tunable lasers and monolithic multi-wavelength laser arrays.

Abstract translation: 公开了量子点有源区结构。 在优选实施例中，选择与点的量子限制状态相关联的点尺寸分布和光跃迁能量值序列，以便于在扩展的波长范围内形成连续的光学增益谱。 在一个实施例中，量子点是沿着生长平面具有至少三个长度 - 宽度比的自组装量子点。 在一个实施例中，在量子阱中形成量子点以改善载流子限制。 在其他实施例中，量子点用作激光器件中的有源区域，包括可调激光器和单片多波长激光器阵列。

公开(公告)号：WO02058200A2

公开(公告)日：2002-07-25

申请号：PCT/US0131256

申请日：2001-10-05

Applicant: STC UNM

Inventor： STINTZ ANDREAS ,  VARANGIS PETROS N ,  MALLOY KEVIN J ,  LESTER LUKE F ,  NEWELL TIMOTHY C ,  LI HUA

IPC: H01S5/343 ,  H01S5/12 ,  H01S5/125 ,  H01S5/14 ,  H01S5/183 ,  H01S5/22 ,  H01S5/34 ,  H01S5/40 ,  H01S5/00

CPC classification number: B82Y30/00 ,  B82Y10/00 ,  B82Y20/00 ,  H01S5/1228 ,  H01S5/143 ,  H01S5/3412 ,  H01S5/4031 ,  H01S5/4043 ,  H01S5/4087

Abstract: A quantum dot active region is disclosed in which quantum dot layers are formed using a self-assembled growth technique. In one embodiment, growth parameters are selected to control the dot density and dot size distribution to achieve desired optical gain spectrum characteristics. In one embodiment, the distribution in dot size and the sequence of optical transition energy values associated with the quantum confined states of the dots are selected to facilitate forming a continuous optical gain spectrum over an extended wavelength range. In another embodiment, the optical gain is selected to increase the saturated ground state gain for wavelengths of 1260 nanometers and greater. In other embodiments, the quantum dots are used as the active region in laser devices, including tunable lasers and monolithic multi-wavelength laser arrays.

Abstract translation: 公开了一种量子点有源区，其中使用自组装生长技术形成量子点层。 在一个实施例中，选择生长参数以控制点密度和点尺寸分布以实现期望的光学增益谱特性。 在一个实施例中，选择与点的量子限制状态相关联的点尺寸分布和光学跃迁能量值序列，以便于在扩展的波长范围上形成连续的光学增益光谱。 在另一个实施例中，选择光增益以增加对于1260纳米或更大的波长的饱和基态增益。 在其他实施例中，量子点用作激光器件中的有源区域，包括可调激光器和单片多波长激光器阵列。