公开(公告)号：WO2005041366A2

公开(公告)日：2005-05-06

申请号：PCT/US2004035293

申请日：2004-10-22

Applicant: STC UNM ,  GRAY ALLEN L ,  STINTZ ANDREAS ,  MALLOY KEVIN J ,  LESTER LUKE F ,  VARANGIS PETROS M

Inventor： GRAY ALLEN L ,  STINTZ ANDREAS ,  MALLOY KEVIN J ,  LESTER LUKE F ,  VARANGIS PETROS M

IPC: H01L21/20 ,  H01L29/06 ,  H01S20060101 ,  H01S5/22 ,  H01S5/34 ,  H01S5/343 ,  H01S

CPC classification number: B82Y10/00 ,  B82Y20/00 ,  H01L21/02392 ,  H01L21/02433 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02546 ,  H01S5/2201 ,  H01S5/3412 ,  H01S5/34366 ,  H01S2304/02

Abstract: Symmetric quantum dots are embedded in quantum wells. The symmetry is achieved by using slightly off-axis substrates and/or overpressure during the quantum dot growth. The quantum dot structure can be used in a variety of applications, including semiconductor lasers.

Abstract translation: 对称量子点嵌入在量子阱中。 通过在量子点生长期间使用稍微离轴的衬底和/或超压实现对称性。 量子点结构可用于各种应用，包括半导体激光器。

公开(公告)号：WO2005041366A3

公开(公告)日：2005-05-06

申请号：PCT/US2004/035293

申请日：2004-10-22

Applicant: SCIENCE & TECHNOLOGY CORPORATION @ UNM ,  GRAY, Allen, L. ,  STINTZ, Andreas ,  MALLOY, Kevin, J. ,  LESTER, Luke, F. ,  VARANGIS, Petros, M.

Inventor： GRAY, Allen, L. ,  STINTZ, Andreas ,  MALLOY, Kevin, J. ,  LESTER, Luke, F. ,  VARANGIS, Petros, M.

IPC: H01L29/06 ,  H01L29/24 ,  H01L21/00 ,  H01S5/00

Abstract: Symmetric quantum dots (320) are embedded in quantum wells (330). The symmetry is achieved by using slightly off-axis substrates (302) and/or overpressure during the quantum dot growth. The quantum dot structure can be used in a variety of applications, including semiconductor lasers.