公开(公告)号：WO2010022064A1

公开(公告)日：2010-02-25

申请号：PCT/US2009/054181

申请日：2009-08-18

Applicant: NANOCRYSTAL CORPORATION ,  VARANGIS, Petros, M. ,  ZHANG, Lei

Inventor： VARANGIS, Petros, M. ,  ZHANG, Lei

IPC: H01L21/20

CPC classification number: H01L21/0262 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02395 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02603 ,  H01L21/02636 ,  H01L21/02639 ,  H01L33/007 ,  H01L33/18 ,  H01L33/24 ,  H01S5/18 ,  H01S5/183 ,  H01S5/3428 ,  H01S5/34333

Abstract: Exemplary embodiments provide semiconductor devices including high-quality (i e, defect free) Group III - Nitride nanostructures and uniform Group III - Nitride nanostructure arrays as well as their scalable processes for manufacturing, where the position, orientation, cross-sectional features, length and the crystallinity of each nanostructure can be precisely controlled A pulsed growth mode can be used to fabricate the disclosed Group III - Nitride nanostructures and/or nanostructure arrays providing a uniform length of about 0.01 - 20 micrometers (11 m) with constant cross-sectional features including an exemplary diameter of about 10 nanometers (nm) - 500 micrometers (11 m) Furthermore, core-shell nanostructure/MQW active structures can be formed by a core-shell growth on the non-polar sidewalls of each nanostructure and can be configured in nanoscale photoelectronic devices such as nanostructure LEDs and/or nanostructure lasers to provide tremendously-high efficiencies

Abstract translation: 示例性实施例提供了包括高质量（即，无缺陷）III族氮化物纳米结构和均匀的III族氮化物纳米结构阵列的半导体器件及其可制造的可扩展工艺，其中位置，取向，横截面特征，长度和 可以精确地控制每个纳米结构的结晶度。脉冲生长模式可用于制造所公开的III-氮化物纳米结构和/或纳米结构阵列，其提供具有恒定横截面特征的约0.01-20微米（11m）的均匀长度 包括约10纳米（nm） - 500微米（11μm）的示例性直径。此外，核 - 壳纳米结构/ MQW活性结构可以通过在每个纳米结构的非极性侧壁上的核 - 壳生长形成，并且可以被配置 在纳米尺度的光电子器件如纳米结构的LED和/或纳米结构的激光器中，以提供极高的效率

公开(公告)号：WO2009009612A9

公开(公告)日：2009-01-15

申请号：PCT/US2008/069552

申请日：2008-07-09

Applicant: NANOCRYSTAL, LLC ,  ZHANG, Lei ,  VARANGIS, Petros, M.

Inventor： ZHANG, Lei ,  VARANGIS, Petros, M.

IPC: H01L29/267

Abstract: Self-assembled quantum dots (QDs) are well-suited as seeds for small pitch, uniform nanowires formed across large wafers. In one embodiment, after the formation of GaN QDs, the growth condition is switched to pulsed MOCVD mode to form high density small pitch GaN nanowires from the QD seeds. After the GaN nanowires reach a desired height, the growth condition is switched to coalescence MOCVD mode and a high quality GaN epi layer is formed through the coalescence of the GaN nanowires.

公开(公告)号：WO2005041366A2

公开(公告)日：2005-05-06

申请号：PCT/US2004035293

申请日：2004-10-22

Applicant: STC UNM ,  GRAY ALLEN L ,  STINTZ ANDREAS ,  MALLOY KEVIN J ,  LESTER LUKE F ,  VARANGIS PETROS M

Inventor： GRAY ALLEN L ,  STINTZ ANDREAS ,  MALLOY KEVIN J ,  LESTER LUKE F ,  VARANGIS PETROS M

IPC: H01L21/20 ,  H01L29/06 ,  H01S20060101 ,  H01S5/22 ,  H01S5/34 ,  H01S5/343 ,  H01S

CPC classification number: B82Y10/00 ,  B82Y20/00 ,  H01L21/02392 ,  H01L21/02433 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02546 ,  H01S5/2201 ,  H01S5/3412 ,  H01S5/34366 ,  H01S2304/02

Abstract: Symmetric quantum dots are embedded in quantum wells. The symmetry is achieved by using slightly off-axis substrates and/or overpressure during the quantum dot growth. The quantum dot structure can be used in a variety of applications, including semiconductor lasers.

Abstract translation: 对称量子点嵌入在量子阱中。 通过在量子点生长期间使用稍微离轴的衬底和/或超压实现对称性。 量子点结构可用于各种应用，包括半导体激光器。

公开(公告)号：WO2009070625A1

公开(公告)日：2009-06-04

申请号：PCT/US2008/084763

申请日：2008-11-25

Applicant: NANOCRYSTAL, LLC ,  VARANGIS, Petros, M. ,  ZHANG, Lei

Inventor： VARANGIS, Petros, M. ,  ZHANG, Lei

IPC: H01L21/00

CPC classification number: H01L21/0237 ,  C30B23/02 ,  C30B23/025 ,  C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02639 ,  H01L21/02642

Abstract: A high quality Group III - Nitride semiconductor crystal with ultra-low dislocation density is grown epitaxially on a substrate via a particle film with multiple vertically- arranged layers of spheres with innumerable micro- and/or nano-voids formed among the spheres. The spheres can be composed of a variety of materials, and in particular silica or silicon dioxide (SiO2).

Abstract translation: 具有超低位错密度的高质量III族氮化物半导体晶体通过具有多个垂直排列的球体层的颗粒膜在外延生长，在球体之间形成无数的微孔和/或纳米空隙。 球体可以由各种材料组成，特别是二氧化硅或二氧化硅（SiO 2）。

公开(公告)号：WO2009009612A3

公开(公告)日：2009-05-07

申请号：PCT/US2008069552

申请日：2008-07-09

Applicant: NANOCRYSTAL LLC ,  ZHANG LEI ,  VARANGIS PETROS M

Inventor： ZHANG LEI ,  VARANGIS PETROS M

IPC: H01L29/267

CPC classification number: H01L21/02645 ,  C30B25/005 ,  C30B25/02 ,  C30B25/165 ,  C30B29/403 ,  C30B29/406 ,  C30B29/605 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/0265 ,  H01L29/2003 ,  H01L33/08 ,  H01L33/10 ,  H01L33/18 ,  H01L33/24 ,  H01L33/46 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Self-assembled quantum dots (QDs) are well-suited as seeds for small pitch, uniform nanowires formed across large wafers. In one embodiment, after the formation of GaN QDs, the growth condition is switched to pulsed MOCVD mode to form high density small pitch GaN nanowires from the QD seeds. After the GaN nanowires reach a desired height, the growth condition is switched to coalescence MOCVD mode and a high quality GaN epi layer is formed through the coalescence of the GaN nanowires.

公开(公告)号：WO2009009612A2

公开(公告)日：2009-01-15

申请号：PCT/US2008069552

申请日：2008-07-09

Applicant: NANOCRYSTAL LLC ,  ZHANG LEI ,  VARANGIS PETROS M

Inventor： ZHANG LEI ,  VARANGIS PETROS M

IPC: H01L21/22

CPC classification number: H01L21/02645 ,  C30B25/005 ,  C30B25/02 ,  C30B25/165 ,  C30B29/403 ,  C30B29/406 ,  C30B29/605 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/0265 ,  H01L29/2003 ,  H01L33/08 ,  H01L33/10 ,  H01L33/18 ,  H01L33/24 ,  H01L33/46 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Self-assembled quantum dots (QDs) are well-suited as seeds for small pitch, uniform nanowires formed across large wafers. In one embodiment, after the formation of GaN QDs, the growth condition is switched to pulsed MOCVD mode to form high density small pitch GaN nanowires from the QD seeds. After the GaN nanowires reach a desired height, the growth condition is switched to coalescence MOCVD mode and a high quality GaN epi layer is formed through the coalescence of the GaN nanowires.

Abstract translation: 自组装量子点（QDs）非常适合作为用于小间距，跨越大晶片的均匀纳米线的种子。 在一个实施例中，在形成GaN量子点之后，将生长条件切换到脉冲MOCVD模式以从QD晶种形成高密度小间距GaN纳米线。 在GaN纳米线达到期望的高度之后，生长条件切换到聚结MOCVD模式，通过GaN纳米线的聚结形成高质量的GaN外延层。

公开(公告)号：WO2012075461A1

公开(公告)日：2012-06-07

申请号：PCT/US2011/063179

申请日：2011-12-02

Applicant: NANOCRYSTAL CORPORATION ,  ZHANG, Lei ,  VARANGIS, Petros, M.

Inventor： ZHANG, Lei ,  VARANGIS, Petros, M.

IPC: H01L21/205

CPC classification number: H01L21/02603 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01L31/03048 ,  H01L31/035227 ,  H01L31/1848 ,  H01L33/007 ,  H01L33/18 ,  H01L33/24 ,  H01L33/38 ,  H01S5/0424 ,  H01S5/1042 ,  H01S5/3428 ,  H01S5/34333 ,  H01S2301/176 ,  H01S2304/04 ,  Y02E10/544 ,  Y02P70/521

Abstract: Embodiments provide semiconductors including defect free Group III - Nitride nanostructures and uniform nanostructure arrays as well as processes for manufacturing, where features can be precisely controlled. A Repetitive Multiple Step Growth-Etch Sequence can be used to fabricate uniform Group III - Nitride semiconductor nanostructures and/or nanostructure arrays. Furthermore, core-shell nanostructure/MQW active structures can be formed by a core-shell growth on the non-polar sidewalls of each nanostructure and can be configured in nanoscale optoelectronic devices to provide very high efficiencies. Additional growth mode transitions between different Repetitive Multiple Step Growth-Etch Sequences or between a Repetitive Multiple Step Growth-Etch Sequence and conventional growth mode are employed in order to incorporate certain Group III - Nitride compounds into the nanostructures and form devices. In addition. Group III - Nitride substrate structures can be formed by coalescing Group III - Nitride nanostructures and/or nanostructure arrays to fabricate visible LEDs and lasers.

Abstract translation: 实施例提供了半导体，包括无缺陷的III族氮化物纳米结构和均匀的纳米结构阵列，以及可精确控制特征的制造工艺。 重复的多步生长蚀刻序列可用于制造均匀的III族 - 氮化物半导体纳米结构和/或纳米结构阵列。 此外，核 - 壳纳米结构/ MQW活性结构可以通过在每个纳米结构的非极性侧壁上的核 - 壳生长形成，并且可以配置在纳米尺度的光电子器件中以提供非常高的效率。 使用不同重复多步生长蚀刻序列之间或重复多步生长蚀刻序列和常规生长模式之间的附加生长模式转变，以便将某些III族 - 氮化物化合物掺入纳米结构并形成器件。 此外。 III族 - 氮化物衬底结构可以通过聚集III-氮化物纳米结构和/或纳米结构阵列来制造可见的LED和激光器来形成。

公开(公告)号：WO2007040600A3

公开(公告)日：2008-01-10

申请号：PCT/US2006009894

申请日：2006-03-15

Applicant: INNOLUME ACQUISITION INC ,  GRAY ALLEN L ,  HUANG HUA ,  LI HUA ,  VARANGIS PETROS M ,  ZHANG LEI ,  ZILKO JOHN L

Inventor： GRAY ALLEN L ,  HUANG HUA ,  LI HUA ,  VARANGIS PETROS M ,  ZHANG LEI ,  ZILKO JOHN L

IPC: H01S3/098

CPC classification number: H01S5/065 ,  B82Y20/00 ,  H01S5/0602 ,  H01S5/0657 ,  H01S5/10 ,  H01S5/1014 ,  H01S5/1064 ,  H01S5/22 ,  H01S5/34 ,  H01S5/3412

Abstract: A mode-locked integrated semiconductor laser has a gain section and an absorption section that are based on quantum-confined active regions. The optical mode(s) in each section can be modeled as occupying a certain cross-sectional area, referred to as the mode cross-section. The mode cross-section in the absorber section is larger in area than the mode cross-section in the gain section, thus reducing the optical power density in the absorber section relative to the gain section. This, in turn, delays saturation of the absorber section until higher optical powers, thus increasing the peak power output of the laser.

Abstract translation: 锁模集成半导体激光器具有基于量子限制有源区域的增益部分和吸收部分。 每个部分中的光学模式可以被建模为占据一定的横截面积，称为模式横截面。 吸收体部的模式截面的面积大于增益部的模式截面，因此相对于增益部降低吸收部的光功率密度。 这反过来延迟了吸收器部分的饱和，直到更高的光功率，从而增加了激光器的峰值功率输出。

公开(公告)号：WO2007040600A2

公开(公告)日：2007-04-12

申请号：PCT/US2006/009894

申请日：2006-03-15

Applicant: ZIA LASER, INC. ,  GRAY, Allen, L. ,  HUANG, Hua ,  LI, Hua ,  VARANGIS, Petros, M. ,  ZHANG, Lei ,  ZILKO, John, L.

Inventor： GRAY, Allen, L. ,  HUANG, Hua ,  LI, Hua ,  VARANGIS, Petros, M. ,  ZHANG, Lei ,  ZILKO, John, L.

IPC: H01S3/098 ,  H01S5/00

CPC classification number: H01S5/065 ,  B82Y20/00 ,  H01S5/0602 ,  H01S5/0657 ,  H01S5/10 ,  H01S5/1014 ,  H01S5/1064 ,  H01S5/22 ,  H01S5/34 ,  H01S5/3412

Abstract: A mode-locked integrated semiconductor laser has a gain section and an absorption section that are based on quantum-confined active regions. The optical mode(s) in each section can be modeled as occupying a certain cross-sectional area, referred to as the mode cross-section. The mode cross-section in the absorber section is larger in area than the mode cross-section in the gain section, thus reducing the optical power density in the absorber section relative to the gain section. This, in turn, delays saturation of the absorber section until higher optical powers, thus increasing the peak power output of the laser.

Abstract translation: 锁模集成半导体激光器具有基于量子限制有源区域的增益部分和吸收部分。 每个部分中的光学模式可以被建模为占据一定的横截面积，称为模式横截面。 吸收体部的模式截面的面积大于增益部的模式截面，因此相对于增益部降低吸收部的光功率密度。 这反过来延迟了吸收器部分的饱和，直到更高的光功率，从而增加了激光器的峰值功率输出。

公开(公告)号：WO2005041366A3

公开(公告)日：2005-05-06

申请号：PCT/US2004/035293

申请日：2004-10-22

Applicant: SCIENCE & TECHNOLOGY CORPORATION @ UNM ,  GRAY, Allen, L. ,  STINTZ, Andreas ,  MALLOY, Kevin, J. ,  LESTER, Luke, F. ,  VARANGIS, Petros, M.

Inventor： GRAY, Allen, L. ,  STINTZ, Andreas ,  MALLOY, Kevin, J. ,  LESTER, Luke, F. ,  VARANGIS, Petros, M.

IPC: H01L29/06 ,  H01L29/24 ,  H01L21/00 ,  H01S5/00

Abstract: Symmetric quantum dots (320) are embedded in quantum wells (330). The symmetry is achieved by using slightly off-axis substrates (302) and/or overpressure during the quantum dot growth. The quantum dot structure can be used in a variety of applications, including semiconductor lasers.