公开(公告)号：EP0996149A1

公开(公告)日：2000-04-26

申请号：EP99121236.6

申请日：1999-10-25

Applicant: STMicroelectronics S.r.l.

Inventor： Rapisarda, Cirino ,  Arena, Giuseppe ,  Palara, Sergio

IPC: H01L21/762 ,  H01L21/763

CPC classification number: H01L21/762 ,  H01L21/76208 ,  H01L21/763

Abstract: A method for manufacturing a thick oxide layer on a semiconductive substrate is presented. The method comprises the formation of at least one layer of dielectric material on said substrate, followed by formation of a plurality of trench regions of a predetermined width in the substrate. A plurality of corresponding walls of semiconductive material of a second predetermined width are delimited. Finally, the semiconductor is submitted to a thermal treatment to oxidize said walls.

Abstract translation: 提出了一种在半导体衬底上制造厚氧化层的方法。 该方法包括在所述衬底上形成至少一层介电材料，然后在衬底中形成预定宽度的多个沟槽区域。 限定第二预定宽度的多个相应的半导体材料的壁。 最后，将半导体进行热处理以氧化所述壁。