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1.Vertical bipolar power transistor with an integrated sensing resistor 失效
Title translation: 具有集成感测电阻器的垂直功率双极型晶体管公开(公告)号:EP0810670B1
公开(公告)日:2004-07-28
申请号:EP96830310.7
申请日:1996-05-31
Applicant: STMicroelectronics S.r.l.
Inventor: Palara, Sergio
IPC: H01L29/732
CPC classification number: H01L29/7304
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2.Method and circuit for detecting the presence of a spark in internal combustion engine 失效
Title translation: 方法和电路,用于在内燃发动机中检测火花公开(公告)号:EP0740072B1
公开(公告)日:2002-08-07
申请号:EP95830169.9
申请日:1995-04-28
Applicant: STMicroelectronics S.r.l. , DaimlerChrysler Corporation
IPC: F02P1/00 , F02P17/00 , G01R29/027 , G01R31/38
CPC classification number: H01T13/60 , F02P17/12 , G01R29/0273
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公开(公告)号:EP0757441B1
公开(公告)日:2002-06-26
申请号:EP95830345.5
申请日:1995-07-31
Applicant: STMicroelectronics S.r.l.
Inventor: Palara, Sergio
IPC: H03K17/00 , H03K17/082 , F02P3/04
CPC classification number: H03K17/0826 , F02P3/0552
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公开(公告)号:EP0756329B1
公开(公告)日:2002-01-16
申请号:EP95830328.1
申请日:1995-07-27
Applicant: Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe , STMicroelectronics S.r.l.
Inventor: Leonardi, Salvatore , Lizzio, Pietro , Patti, Davide Giuseppe , Palara, Sergio
IPC: H01L29/732 , H01L29/10 , H01L21/331
CPC classification number: H01L29/66272 , H01L29/1004 , H01L29/7322
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5.Driving circuit, MOS transistor using the same and corresponding applications 失效
Title translation: 用这样的电路控制电路MOS晶体管公开(公告)号:EP0757512B1
公开(公告)日:2001-11-14
申请号:EP95830341.4
申请日:1995-07-31
Applicant: STMicroelectronics S.r.l. , CO.RI.M.ME. CONSORZIO PER LA RICERCA SULLA MICROELETTRONICA NEL MEZZOGIORNO
Inventor: Palara, Sergio , Graziano, Vito
IPC: H05B41/00 , H03K17/687 , H02M7/5383 , H05B41/282
CPC classification number: H03K17/04123 , H03K17/302 , H05B41/2825
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6.Circuit for preventing turn-on of parasitic components in integrated circuits including a power stage and low-voltage control circuitry 失效
Title translation: 电路,用于防止在集成电路寄生分量的点火包括功率级和低电压控制电路公开(公告)号:EP0703620B1
公开(公告)日:2001-01-10
申请号:EP94830444.9
申请日:1994-09-21
Applicant: STMicroelectronics S.r.l. , Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe
Inventor: Palara, Sergio , Zambrano, Raffaele
IPC: H01L27/02
CPC classification number: H01L27/0248
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7.Manufacturing method for an oxide layer having high thickness 审中-公开
Title translation: Herstellungsverfahrenfüreine Oxidschicht mit grosser Dicke公开(公告)号:EP0996149A1
公开(公告)日:2000-04-26
申请号:EP99121236.6
申请日:1999-10-25
Applicant: STMicroelectronics S.r.l.
Inventor: Rapisarda, Cirino , Arena, Giuseppe , Palara, Sergio
IPC: H01L21/762 , H01L21/763
CPC classification number: H01L21/762 , H01L21/76208 , H01L21/763
Abstract: A method for manufacturing a thick oxide layer on a semiconductive substrate is presented. The method comprises the formation of at least one layer of dielectric material on said substrate, followed by formation of a plurality of trench regions of a predetermined width in the substrate. A plurality of corresponding walls of semiconductive material of a second predetermined width are delimited. Finally, the semiconductor is submitted to a thermal treatment to oxidize said walls.
Abstract translation: 提出了一种在半导体衬底上制造厚氧化层的方法。 该方法包括在所述衬底上形成至少一层介电材料,然后在衬底中形成预定宽度的多个沟槽区域。 限定第二预定宽度的多个相应的半导体材料的壁。 最后,将半导体进行热处理以氧化所述壁。
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8.
公开(公告)号:EP0740073B1
公开(公告)日:2004-08-18
申请号:EP95830168.1
申请日:1995-04-28
Applicant: CO.RI.M.ME. CONSORZIO PER LA RICERCA SULLA MICROELETTRONICA NEL MEZZOGIORNO , STMicroelectronics S.r.l.
Inventor: Palara, Sergio , Sueri, Stefano , Schiaccianoce, Salvatore
IPC: F02P17/12 , G01R29/027 , G01R31/38
CPC classification number: H01T13/60 , F02P17/12 , G01R29/0273
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9.Starting circuit, MOS transistor using the same and corresponding applications 失效
Title translation: 起动电路MOS晶体管具有这样的电路公开(公告)号:EP0757511B1
公开(公告)日:2003-03-26
申请号:EP95830340.6
申请日:1995-07-31
Applicant: STMicroelectronics S.r.l. , CO.RI.M.ME. CONSORZIO PER LA RICERCA SULLA MICROELETTRONICA NEL MEZZOGIORNO
Inventor: Palara, Sergio , Graziano, Vito
IPC: H05B41/00 , H03K17/687 , H02M7/5383 , H05B41/295
CPC classification number: H05B41/2825 , H02M7/5383 , H03K17/166 , H03K17/284
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10.Voltage reference with linear, negative, temperature coefficient 失效
Title translation: 具有线性负温度系数的电压基准公开(公告)号:EP0656574B1
公开(公告)日:1999-05-19
申请号:EP93830488.8
申请日:1993-12-02
Applicant: Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe , STMicroelectronics S.r.l.
Inventor: Scaccianoce, Salvatore , Palara, Sergio , Aiello, Natale
IPC: G05F3/30
CPC classification number: G05F3/30
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