公开(公告)号：EP0996149A1

公开(公告)日：2000-04-26

申请号：EP99121236.6

申请日：1999-10-25

Applicant: STMicroelectronics S.r.l.

Inventor： Rapisarda, Cirino ,  Arena, Giuseppe ,  Palara, Sergio

IPC: H01L21/762 ,  H01L21/763

CPC classification number: H01L21/762 ,  H01L21/76208 ,  H01L21/763

Abstract: A method for manufacturing a thick oxide layer on a semiconductive substrate is presented. The method comprises the formation of at least one layer of dielectric material on said substrate, followed by formation of a plurality of trench regions of a predetermined width in the substrate. A plurality of corresponding walls of semiconductive material of a second predetermined width are delimited. Finally, the semiconductor is submitted to a thermal treatment to oxidize said walls.

Abstract translation: 提出了一种在半导体衬底上制造厚氧化层的方法。 该方法包括在所述衬底上形成至少一层介电材料，然后在衬底中形成预定宽度的多个沟槽区域。 限定第二预定宽度的多个相应的半导体材料的壁。 最后，将半导体进行热处理以氧化所述壁。

公开(公告)号：EP1043769A1

公开(公告)日：2000-10-11

申请号：EP99830199.8

申请日：1999-04-07

Applicant: STMicroelectronics S.r.l.

Inventor： Fallica, Piero Giorgio ,  Patti, Davide Giuseppe ,  Rapisarda, Cirino

IPC: H01L21/762 ,  H01L21/763

CPC classification number: H01L21/76232 ,  H01L21/763

Abstract: The process comprises the steps of: carrying out a directional etching, in a semiconductor material body (2, 3), to form trenches (10, 10a) having a first width; carrying out an isotropic etching of the semiconductor material body (2, 3) under the trenches (10, lOa) to form cavities (13; 13a; 13b) having a width larger than the trenches; covering the walls of the cavities with dielectric material (17a; 17b; 17c); depositing non-conducting material different from thermal oxide to fill said cavities at least partially, so as to form a single-crystal island (16) separated from the rest of the semiconductor material body (2, 3). The isotropic etching permits the formation of at least two adjacent cavities (13a, 13b) separated by a support region (25) of semiconductor material which is oxidized (26) together with the walls of the cavities to provide a support to the island (16) prior to filling with non-conducting material.

Abstract translation: 该方法包括以下步骤：执行一方向性蚀刻，在半导体材料体（2，3），以形成沟槽（10，10A），其具有第一宽度; 进行半导体材料主体的各向同性蚀刻的（2，3）在沟槽下（10，图10a），以形成空腔（13; 13A; 13B），其具有的宽度大于所述沟槽较大; 覆盖有电介质材料的空腔的壁（17A; 17B; 17C）; 沉积非导电材料从热氧化物不同填充所述空腔至少部分地，以形成从所述半导体材料体的其余部分分离的单晶冰岛（16）（2，3）。 各向同性蚀刻允许至少两个相邻空腔的形成（13A，13B）由半导体材料制成的支承区域（25）中分离的所有被氧化（26）与腔室的壁以向冰岛的支撑一起（16 ）之前的非导电材料填充。