Voltage boost device for nonvolatile memories, operating in a low consumption standby condition
    12.
    发明公开
    Voltage boost device for nonvolatile memories, operating in a low consumption standby condition 有权
    SpannungserhöherfürnichtflüchtigeSpeicher zum Betrieb im verbrauchsarmen Bereitschaftszustand

    公开(公告)号:EP1113450A1

    公开(公告)日:2001-07-04

    申请号:EP99830825.8

    申请日:1999-12-30

    CPC classification number: G11C16/30 G11C5/145

    Abstract: A voltage boost device includes a first boost stage (4) and a second boost stage (5) connected to an input terminal and to an output terminal (10), the output terminal (10) supplying an output voltage higher than a supply voltage. The input terminal receives an operating condition signal (SB) having a first logic level representative of a standby operating state and a second logic level representative of an active operation state. The first boost stage (4) is enabled in presence of the second logic level of the operating condition signal (SB), and is disabled in presence of the first logic level of the operating condition signal (SB); the second boost stage (5) is controlled in a first operating condition in presence of the first logic level of the operating condition signal (SB), and is controlled in a second operating condition in presence of the second logic level of the operating condition signal (SB).

    Abstract translation: 升压装置包括连接到输入端和输出端(10)的第一升压级(4)和第二升压级(5),输出端(10)提供高于电源电压的输出电压。 输入端接收具有代表待机运行状态的第一逻辑电平的运行状态信号(SB)和表示主动运行状态的第二逻辑电平。 第一升压级(4)在存在操作条件信号(SB)的第二逻辑电平的情况下使能,并且在存在操作条件信号(SB)的第一逻辑电平的情况下被禁止; 在操作条件信号(SB)的第一逻辑电平存在的情况下,第二升压级(5)被控制在第一操作状态中,并且在操作状态信号的第二逻辑电平存在的情况下被控制在第二操作状态 (SB)。

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