Power supply device with detection of malfunctioning
    12.
    发明公开
    Power supply device with detection of malfunctioning 有权
    Stromversorgungsgerätmit Fehlfunktionserkennung

    公开(公告)号:EP1178591A1

    公开(公告)日:2002-02-06

    申请号:EP00830547.6

    申请日:2000-07-31

    CPC classification number: H02M3/28 H02M1/32 H02M3/33523

    Abstract: The power supply device comprises a DC-DC converter circuit (8) including a power switch (10) and a driving stage (102). The driving stage (102) has a compensation terminal (102b) on which a compensation voltage (V COMP ) is present and which receives a biasing current (I P ), said driving stage (102) comprising a control circuit (107) having an output terminal connected to a control terminal (11) of the power switch (10) and disconnection-detecting means (105) connected to said compensation terminal (102b) and generating a signal for permanent turning-off of said power switch (10) when the biasing current (I P ) drops below a current-threshold value (I T ). The driving stage (102) moreover comprises over-voltage detecting means (104) connected to the compensation terminal (102b) and generating a signal for temporary turning-off of said power switch (10) when said compensation voltage (V COMP ) exceeds a voltage-threshold value (V T ).

    Abstract translation: 电源装置包括包括电源开关(10)和驱动级(102)的DC-DC转换器电路(8)。 驱动级(102)具有在其上存在补偿电压(VCOMP)并且接收偏置电流(IP)的补偿端子(102b),所述驱动级(102)包括具有输出端子 连接到所述电源开关(10)的控制端子(11)和连接到所述补偿端子(102b)的断开检测装置(105),并且当所述偏置 当前(IP)下降到当前阈值(IT)以下。 驱动级(102)还包括连接到补偿端子(102b)的过电压检测装置(104),并且当所述补偿电压(VCOMP)超过电压时产生用于暂时关断所述电源开关(10)的信号 - 阈值(VT)。

    Protection structure for high-voltage integrated electronic devices
    13.
    发明公开
    Protection structure for high-voltage integrated electronic devices 失效
    Schutzstrukturfürintegrierte elektronische Hochspannungsanordnungen

    公开(公告)号:EP0944113A1

    公开(公告)日:1999-09-22

    申请号:EP98830095.0

    申请日:1998-02-24

    Abstract: The protection structure (1) has a plurality of protection regions (2) extending along closed lines arranged inside each other. Each intermediate protection region (2) is tangent to two different adjacent protection regions (2), at different areas (3), such as to form a connection in series with them. The protection structure (1) can be of resistive material, such as to form a series of resistors, or it can include doped portions alternately of P- and N-type, such as to form a plurality of anti-series arranged diodes. The structure can be made of polycrystalline silicon extending on the substrate surface, or can be integrated (implanted or diffused) inside the substrate.

    Abstract translation: 保护结构(1)具有沿彼此彼此布置的封闭线延伸的多个保护区域(2)。 每个中间保护区域(2)在不同的区域(3)处与两个不同的相邻保护区域(2)相切,以形成与它们串联的连接。 保护结构(1)可以是电阻材料,例如形成一系列电阻器,或者它可以包括P型和N型交替的掺杂部分,以形成多个抗串联排列的二极管。 该结构可以由在衬底表面上延伸的多晶硅制成,或者可以在衬底内集成(注入或扩散)。

    Non linear multiplier for switching mode controller
    15.
    发明公开
    Non linear multiplier for switching mode controller 失效
    Nichtlinearer Multipliziererfüreinen Schaltregler

    公开(公告)号:EP0915559A1

    公开(公告)日:1999-05-12

    申请号:EP97830584.5

    申请日:1997-11-10

    CPC classification number: H02M1/4225 Y02B70/126 Y02P80/112

    Abstract: The use of a nonlinear multiplier in the control loop of DC-DC converters, SMPS (Switching Mode Power Supply) systems and in PFC (Power Factor Correction) systems, and in particular wherein the constant K of the multiplier circuit vary in function of the amplitude of the error signal fed to an input of the multiplier circuit, greatly enhances stability and immunity to noise, especially that coming from the supply rails.

    Abstract translation: 在DC-DC转换器,SMPS(开关模式电源)系统和PFC(功率因数校正)系统的控制环路中使用非线性乘法器,特别地,其中乘法器电路的常数K在 提供给乘法器电路的输入的误差信号的幅度大大增强了对噪声的稳定性和抗扰性,特别是来自电源轨的噪声。

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