Abstract:
A by-pass device that uses a power MOS transistor but does not need any inductor and thus be fully integrable uses an oscillator and a charge pump circuit supplied through a protection transistor and a control circuit of a driving stage of the gate of the by-pass MOS transistor depending on the sign of the voltage on the nodes of the group of cells in series and of the by-pass MOS transistor and of the charge voltage of a tank capacitor that supplies the control circuit and the driving stage.
Abstract:
The invention relates to a method and a circuit for carrying out a trimming operation on integrated circuits (2) having a trimming circuit portion (1) which includes memory elements (10) and a means (8) of modifying the state of said memory elements (10), at least a first input or supply pin (IN), an output pin (OUT), and a second supply pin (GND). The method comprises the following steps:
enabling a single pin (OUT) to receive trimming data by biasing the pin to outside its operating range; to acquire such data, obtaining a clock signal from a division of the bias potential of the trimming pin (OUT); obtaining the logic value of the trimming data from a different division of the bias potential of said pin (OUT); enabling serial acquisition of the data according to the clock signal; and transferring the data to the means (8) of modifying the state of the memory elements (10).
Advantageously, the data are also transferred into a selection logic (11), by-passing the means (8) for modifying the state of the memory elements (10), on the occurrence of a simulated trimming operation.
Abstract:
The DC-DC converter (1') comprises a current error amplifier (34') and a voltage error amplifier (30) connected in parallel to control the charging phase of the battery (18), during which a charging current (IBAT) is supplied to the battery (18) to bring the voltage (VBAT) of the battery (18) gradually up to a full charge voltage (VFIN); a charging interruption stage (QA, QB, MS5) for interrupting the charging phase before the voltage (VBAT) of the battery has reached the full charge voltage (VFIN); and an activation stage (104, 106) for activating the charging interruption stage (QA, QB, MS5) when the full charge voltage (VFIN) is close to the supply potential (VCC) at which the supply line (6) of the current error amplifier (34') is set.
Abstract:
The invention relates to a method and a circuit for carrying out a trimming operation on integrated circuits (2) having a trimming circuit portion (1) which includes memory elements (10) and a means (8) of modifying the state of said memory elements (10), at least a first input or supply pin (IN), an output pin (OUT), and a second supply pin (GND). The method comprises the following steps: enabling a single pin (OUT) to receive trimming data by biasing the pin to outside its operating range; to acquire such data, obtaining a clock signal from a division of the bias potential of the trimming pin (OUT); obtaining the logic value of the trimming data from a different division of the bias potential of said pin (OUT); enabling serial acquisition of the data according to the clock signal; and transferring the data to the means (8) of modifying the state of the memory elements (10). Advantageously, the data are also transferred into a selection logic (11), by-passing the means (8) for modifying the state of the memory elements (10), on the occurrence of a simulated trimming operation.