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    Coil material and method for manufacturing the same
    13.
    发明专利
    Coil material and method for manufacturing the same 未知

    公开(公告)号：AU2011233024B2

    公开(公告)日：2014-09-25

    申请号：AU2011233024

    申请日：2011-03-22

    Applicant: SUMITOMO ELECTRIC INDUSTRIES

    Inventor： NUMANO MASATADA ,  MIYANAGA MICHIMASA ,  UCHIHARA TAKESHI ,  OISHI YUKIHIRO ,  KAWABE NOZOMU

    IPC: C22F1/06 ,  B21B3/00 ,  B22D11/00 ,  B22D11/06 ,  C22C23/02 ,  C22F1/00

    Abstract: Disclosed is a method for producing a coil material that forms a coil material by winding a plate-like material consisting of a metal into a cylindrical shape. The plate-like material is a cast material of magnesium alloy discharged from a continuous casting machine and has a thickness t (mm) of 7 mm or less. Also disclosed is a coil material that can contribute to improvements in producibility of high-strength magnesium alloy plate materials by being wound by a winding machine and having temperature T (°C) directly before winding a plate-like material (1) controlled to a temperature such that the surface distortion ((t/R) x 100) given by the thickness t and bending radius R (mm) for the plate-like material (1) is less than the elongation of the plate-like material (1) at room temperature.

    14.
    发明专利
    未知

    公开(公告)号：AT525672T

    公开(公告)日：2011-10-15

    申请号：AT09165935

    申请日：2009-07-21

    Applicant: SUMITOMO ELECTRIC INDUSTRIES

    Inventor： SATOH ISSEI ,  MIYANAGA MICHIMASA ,  YAMAMOTO YOSHIYUKI ,  NAKAHATA HIDEAKI

    IPC: G02F1/35 ,  B28D5/00 ,  G02F1/355 ,  H01L21/62

    Abstract: A method of manufacturing a wavelength converter (10d) that has an optical waveguide (13) and that converts the wavelength of an incoming beam (101) input into the optical waveguide through one end (13a) thereof, and outputs an outgoing beam (102) from the optical waveguide through the other end (13b) thereof, the wavelength converter manufacturing method comprising: a step of growing a first crystal (11); a step of forming two or more regularly arrayed projections (11c) in a surface (11a) of the first crystal (11); and a step of growing a second crystal (16), being an amorphous crystal in which there is essentially no difference in refractive index from that of the first crystal (11), onto said surface (11a) of the first crystal (11); wherein in said step of growing the second crystal, the first and second crystals are formed in such a way that a domain inversion structure in which the polar directions of the first and second crystals periodically reverse along the optical waveguide is created, and the domain inversion structure satisfies quasi-phase-matching conditions for the incoming beam.

    Porous silicon nitride ceramics and method for producing the same.
    18.
    发明专利
    Porous silicon nitride ceramics and method for producing the same. 未知

    公开(公告)号：HK1059432A1

    公开(公告)日：2004-07-02

    申请号：HK04102276

    申请日：2004-03-29

    Applicant: SUMITOMO ELECTRIC INDUSTRIES

    Inventor： MIYANAGA MICHIMASA ,  KOMURA OSAMU

    IPC: C04B35/584 ,  C04B35/591 ,  C04B38/00 ,  H05K1/03 ,  C04B

    Abstract: The invention provides porous silicon nitride ceramics that have uniform, fine closed pores and a manufacturing method thereof. Metal Si powder is mixed with a sintering additive, followed by thermal treatment, which is a pre-process for forming a specific grain boundary phase. Two-stage thermal treatment is thereafter performed by microwave heating at a temperature of 1000 DEG C or more. The metal Si powder is thereafter subjected to a nitriding reaction from its surface, the metal Si is thereafter diffused to nitride formed on the outer shell of the metal Si, and thereby porous silicon nitride ceramics that have uniform, fine closed pores can be obtained. Since the porous silicon nitride ceramics of the present invention have a high ratio of closed pores and are superior in electrical/mechanical characteristics, excellent characteristics can be displayed if they are used, for example, for an electronic circuit board that requires an anti-hygroscopicity, a low dielectric constant, a low dielectric loss, and mechanical strength.

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