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    2.
    发明专利
    未知

    公开(公告)号：DE69808575T2

    公开(公告)日：2003-08-07

    申请号：DE69808575

    申请日：1998-09-04

    Applicant: SUMITOMO ELECTRIC INDUSTRIES

    Inventor： MIYANAGA MICHIMASA ,  NAKAHATA SEIJI ,  YAMAKAWA AKIRA

    IPC: C04B35/591 ,  C04B35/597 ,  C04B35/599

    Abstract: Provided is a silicon nitride sintered body prepared through nitriding reaction of Si. The silicon nitride sintered body consists of crystal grains mainly composed of silicon nitride and/or SIALON and a grain phase, components forming the grain boundary phase consist of a first component including at least one element selected from a group of Na, K, Mg, Ca and Sr and a second component including at least one element selected from a group of Y and lanthanoid series elements, the molar ratio of the first component to the second component is in the range of 1:1 to 6:1 in terms of oxides, the mean breadth and the mean length of the crystal grains are not more than 0.1 mu m and not more than 3 mu m respectively, and the standard deviation of the mean length in the sintered body is within 1.5 mu m.

    3.
    发明专利
    未知

    公开(公告)号：DE69808575D1

    公开(公告)日：2002-11-14

    申请号：DE69808575

    申请日：1998-09-04

    Applicant: SUMITOMO ELECTRIC INDUSTRIES

    Inventor： MIYANAGA MICHIMASA ,  NAKAHATA SEIJI ,  YAMAKAWA AKIRA

    IPC: C04B35/591 ,  C04B35/597 ,  C04B35/599

    Abstract: Provided is a silicon nitride sintered body prepared through nitriding reaction of Si. The silicon nitride sintered body consists of crystal grains mainly composed of silicon nitride and/or SIALON and a grain phase, components forming the grain boundary phase consist of a first component including at least one element selected from a group of Na, K, Mg, Ca and Sr and a second component including at least one element selected from a group of Y and lanthanoid series elements, the molar ratio of the first component to the second component is in the range of 1:1 to 6:1 in terms of oxides, the mean breadth and the mean length of the crystal grains are not more than 0.1 mu m and not more than 3 mu m respectively, and the standard deviation of the mean length in the sintered body is within 1.5 mu m.

    Coil material and method for producing same
    6.
    发明专利
    Coil material and method for producing same 未知

    公开(公告)号：AU2011233024A1

    公开(公告)日：2012-02-23

    申请号：AU2011233024

    申请日：2011-03-22

    Applicant: SUMITOMO ELECTRIC INDUSTRIES

    Inventor： NUMANO MASATADA ,  MIYANAGA MICHIMASA ,  UCHIHARA TAKESHI ,  OISHI YUKIHIRO ,  KAWABE NOZOMU

    IPC: C22F1/06 ,  B21B3/00 ,  B22D11/00 ,  B22D11/06 ,  C22C23/02 ,  C22F1/00

    Abstract: Disclosed is a method for producing a coil material that forms a coil material by winding a plate-like material consisting of a metal into a cylindrical shape. The plate-like material is a cast material of magnesium alloy discharged from a continuous casting machine and has a thickness t (mm) of 7 mm or less. Also disclosed is a coil material that can contribute to improvements in producibility of high-strength magnesium alloy plate materials by being wound by a winding machine and having temperature T (°C) directly before winding a plate-like material (1) controlled to a temperature such that the surface distortion ((t/R) x 100) given by the thickness t and bending radius R (mm) for the plate-like material (1) is less than the elongation of the plate-like material (1) at room temperature.

    COMPOUND SEMICONDUCTOR SINGLE-CRYSTAL MANUFACTURING DEVICE AND MANUFACTURING METHOD
    7.
    发明专利
    COMPOUND SEMICONDUCTOR SINGLE-CRYSTAL MANUFACTURING DEVICE AND MANUFACTURING METHOD 未知

    公开(公告)号：CA2694496A1

    公开(公告)日：2009-09-17

    申请号：CA2694496

    申请日：2009-03-06

    Applicant: SUMITOMO ELECTRIC INDUSTRIES

    Inventor： SATOH ISSEI ,  MIZUHARA NAHO ,  TANIZAKI KEISUKE ,  MIYANAGA MICHIMASA ,  SAKURADA TAKASHI ,  NAKAHATA HIDEAKI

    IPC: C30B23/08 ,  C23C14/28 ,  H01L21/203

    Abstract: An apparatus (1) for manufacturing a compound semiconductor single crystal is provided with a laser light source (6) which can sublimate a material by applying a laser beam to the material; a reaction container (2), which has a laser introducing window (5) that can pass through the laser beam emitted from the laser light source (6) and that can introduce the laser beam into the container, and holds a base substrate (3) which recrystallizes the sublimated material; and a heater (7) which can heat the base substrate (3). The material in the reaction container (2) is sublimated by heating the material by applying the laser beam to the material, and the sublimated material is recrystallized on the base substrate (3) to grow the compound semiconductor single crystal. Then, the compound semiconductor single crystal is separated from the base substrate (3) by using the laser beam.

    WAVELENGTH CONVERTER MANUFACTURING METHOD AND WAVELENGTH CONVERTER
    10.
    发明专利
    WAVELENGTH CONVERTER MANUFACTURING METHOD AND WAVELENGTH CONVERTER 未知

    公开(公告)号：CA2673998A1

    公开(公告)日：2010-02-06

    申请号：CA2673998

    申请日：2009-07-27

    Applicant: SUMITOMO ELECTRIC INDUSTRIES

    Inventor： MIYANAGA MICHIMASA ,  YAMAMOTO YOSHIYUKI ,  NAKAHATA HIDEAKI ,  SATOH ISSEI

    IPC: G02F1/23 ,  H01S5/026

    Abstract: Affords a wavelength converter manufacturing method and a wavelength converter whereby the transmissivity can be improved. A method of manufacturing a wavelength converter (10a) is provided with th e following steps. At first, crystal is grown. Then a first crystal (11) and a second crystal (12) are formed by sectioning the crystal into two or more in such a way that the domains are the reverse of each other. The first and second crystals (11) and (12) are then interlocked in such a way that a domain inversion structure in which the polar directions of the first and second crystals (11) and (12) periodically reverse along an optical waveguide (13) is formed, and the domain inversion structure satisfies quasi-phase-matching conditions for an incoming beam (101).

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