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21 records (took 0.026 seconds)

    11.
    发明专利
    未知

    公开(公告)号：DE69734419T2

    公开(公告)日：2006-04-27

    申请号：DE69734419

    申请日：1997-06-13

    Applicant: SUMITOMO ELECTRIC INDUSTRIES

    Inventor： YAMAGATA SHINICHI ,  ABE YUGAKU ,  IMAMURA MAKOTO ,  FUKUI AKIRA ,  TAKANO YOSHISHIGE ,  TAKIKAWA TAKATOSHI ,  HIROSE YOSHIYUKI

    IPC: B22F3/24 ,  H01L23/15 ,  C22C1/05 ,  C22C1/10 ,  C22C21/00 ,  C22C32/00 ,  C25D17/16 ,  H01L21/48 ,  H01L23/14

    Abstract: To provide a substrate material made of an aluminum/silicon carbide composite alloy which has a thermal conductivity of 100 W/mxK or higher and a thermal expansion coefficient of 20x10 / DEG C or lower and is lightweight and compositionally homogeneous. A substrate material made of an aluminum/silicon carbide composite ally which comprises Al-SiC alloy composition parts and non alloy composition part and dispersed therein from 10 to 70% by weight silicon carbide particles, and in which the fluctuations of silicon carbide concentration in the Al-SiC alloy composition parts therein are within 1% by weight. The substrate material is produced by sintering a compact of an aluminum/silicon carbide starting powder at a temperature not lower than 600 DEG C in a non-oxidizing atmosphere.

    ADVANCE MULTILAYER MOLDED PLASTIC PACKAGE USING MESIC TECHNOLOGY
    12.
    发明专利
    ADVANCE MULTILAYER MOLDED PLASTIC PACKAGE USING MESIC TECHNOLOGY 未知

    公开(公告)号：CA2120464A1

    公开(公告)日：1993-08-19

    申请号：CA2120464

    申请日：1993-02-18

    Applicant: SUMITOMO ELECTRIC INDUSTRIES ,  INTEL CORP

    Inventor： BHATTACHARYYA BIDYUT K ,  MALLIK DEBENDRA ,  BAN SYUNSUKE ,  TAKIKAWA TAKATOSHI ,  YAMANAKA SHOSAKU

    IPC: C23C14/06 ,  C23C14/14 ,  H01L23/485 ,  H01L23/495 ,  H01L23/50 ,  H01L23/64

    Abstract: A method and resulting structure for constructing an IC package utilizing thin film technology. The package has a bottom conductive plate that has a layer of ceramic vapor deposited onto the plate in a predetermined pattern. Adjacent to the insulative layer of ceramic is a layer of conductive metal vapor deposited onto the ceramic. The layer of metal can be laid down onto the ceramic in a predetermined pattern to create a power plane, a plurality of signal lines, or a combination of power planes and signal lines. On top of the layer of conductive material is a lead frame separated by a layer of insulative polyimide material. The polyimide material has a plurality of holes filled with a conductive material, which electrically couple the layer of conductive material with the leads of the lead frame. The power and ground pads of the integrated circuit are connected to the layer of vapor deposited conductive material and conductive plate, which are also coupled to the corresponding leads of the lead frame, thereby connecting the IC to the leads of the lead frame. The signal pads of the IC are connected to the lead frame and/or signal lines formed within the layer of vapor deposited conductive material. The IC and attached circuit package can then be encapsulated in a plastic shell.

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    13.
    发明专利
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 未知

    公开(公告)号：CA2072262A1

    公开(公告)日：1993-01-02

    申请号：CA2072262

    申请日：1992-06-25

    Applicant: SUMITOMO ELECTRIC INDUSTRIES

    Inventor： HARADA KEIZO ,  MAEDA TAKAO ,  TAKIKAWA TAKATOSHI ,  BAN SHUNSUKE ,  YAMANAKA SHOSAKU

    IPC: H01L23/12 ,  H01L21/48 ,  H01L23/14 ,  H01L23/495 ,  H05K1/05 ,  H01L27/12

    Abstract: A plastic package type semiconductor device is composed of a rolled metal substrate (1) made of copper or copper alloy and an insulating film (2) formed on the surface of the substrate. The film may be a single-layer film made of silicon oxynitride or a composite film formed by laminating a silicon oxide layer and a silicon oxynitride layer (or a silicon nitride layer). A semiconductor element (8) is mounted on the film or on the exposed surface of the substrate. Other passive elements (3) are provided on the film. After connecting these elements with bonding wires, the entire device is sealed in a resin molding (13). This device is thus free of cracks due to difference in thermal expansion between the film and the substrate, or peeling due to moisture absorption.

    16.
    发明专利
    未知

    公开(公告)号：DE69207285T2

    公开(公告)日：1996-08-29

    申请号：DE69207285

    申请日：1992-06-29

    Applicant: SUMITOMO ELECTRIC INDUSTRIES

    Inventor： HARADA KEIZO ,  TAKIKAWA TAKATOSHI ,  MAEDA TAKAO ,  BAN SHUNSUKE ,  YAMANAKA SHOSAKU

    IPC: H01L23/12 ,  H01L21/48 ,  H01L23/14 ,  H01L23/495 ,  H05K1/05 ,  C23C16/22

    Abstract: A plastic package type semiconductor device is composed of a rolled metal substrate (1) made of copper or copper alloy and an insulating film (2) formed on the surface of the substrate. The film may be a single-layer film made of silicon oxynitride or a composite film formed by laminating a silicon oxide layer and a silicon oxynitride layer (or a silicon nitride layer). A semiconductor element (8) is mounted on the film or on the exposed surface of the substrate. Other passive elements (3) are provided on the film. After connecting these elements with bonding wires, the entire device is sealed in a resin molding (13). This device is thus free of cracks due to difference in thermal expansion between the film and the substrate, or peeling due to moisture absorption.

    SEMICONDUCTOR DEVICE
    18.
    发明专利
    SEMICONDUCTOR DEVICE 未知

    公开(公告)号：CA2092767A1

    公开(公告)日：1993-09-27

    申请号：CA2092767

    申请日：1993-03-26

    Applicant: SUMITOMO ELECTRIC INDUSTRIES

    Inventor： TAKIKAWA TAKATOSHI ,  YAMANAKA SHOSAKU ,  MAEDA TAKAO ,  HARADA KEIZO ,  BAN SHUNSUKE

    IPC: H01L23/14 ,  H01L23/495 ,  H01L23/498 ,  H01L23/32 ,  H01L23/373 ,  H01L23/66

    Abstract: A semiconductor device which can reduce noise, which can be used for a variety of different purposes in a flexible manner, and which is suitable for automatic assembly. It has a metal board carrying a semiconductor device chip on the central part thereof. An insulating layer, a ceramic laminated wiring board, an organic film, and a lead frame are laminated one on another on the metal board so as to surround the semiconductor device chip. The lead frame is connected to the semiconductor device chip through the ceramic laminated wiring board. The assembly thus formed is sealed with a synthetic resin.

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