公开(公告)号：US20230154973A1

公开(公告)日：2023-05-18

申请号：US18154218

申请日：2023-01-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyangsook LEE ,  Junghwa KIM ,  Eunha LEE ,  Jeonggyu SONG ,  Jooho LEE ,  Myoungho JEONG

IPC: H01L29/08 ,  H01L21/02

CPC classification number: H01L28/55 ,  H01L21/02433 ,  H01L21/02189 ,  H01L29/0847 ,  H01L21/02609 ,  H01L21/02516 ,  H01L21/02181 ,  H01L28/60

Abstract: Provided are dielectric thin-film structures and electronic devices including the same. The dielectric thin-film structure includes a substrate, and a dielectric layer provided on the substrate. The dielectric layer including a tetragonal crystal structure, and crystal grains including a proportion of the crystal grains preferentially oriented such that at least one of a , , or direction of a crystal lattice is parallel to or forms an angle of less than 45 degrees an out-of-plane orientation.

公开(公告)号：US20220140067A1

公开(公告)日：2022-05-05

申请号：US17334030

申请日：2021-05-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeonggyu SONG ,  Younsoo KIM ,  Haeryong KIM ,  Boeun PARK ,  Eunha LEE ,  Jooho LEE ,  Hyangsook LEE ,  Yong-Hee CHO ,  Eunae CHO

IPC: H01L49/02 ,  H01L29/08

Abstract: A semiconductor device includes a lower electrode; an upper electrode disposed to be spaced apart from the lower electrode; and a dielectric layer disposed between the lower electrode and the upper electrode, and including a first metal oxide region, a second metal oxide region, and a third metal oxide region.

公开(公告)号：US20210408255A1

公开(公告)日：2021-12-30

申请号：US17468098

申请日：2021-09-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taehwan MOON ,  Eunha LEE ,  Junghwa KIM ,  Hyangsook LEE ,  Sanghyun JO ,  Jinseong HEO

IPC: H01L29/423 ,  H01L21/28 ,  H01L21/02 ,  H01L27/108 ,  H01L49/02 ,  H01L29/51

Abstract: Provided are an electronic device including a dielectric layer having an adjusted crystal orientation and a method of manufacturing the electronic device. The electronic device includes a seed layer provided on a substrate and a dielectric layer provided on the seed layer. The seed layer includes crystal grains having aligned crystal orientations. The dielectric layer includes crystal grains having crystal orientations aligned in the same direction as the crystal orientations of the seed layer.