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11.发明公开Capacitive micromachined ultrasonic transducer and method of fabricating the same 审中-公开电容微加工超声换能器和方法其制备
公开(公告)号：EP2881182A3
公开(公告)日：2015-12-16
申请号：EP14178360.5
申请日：2014-07-24
Applicant: Samsung Electronics Co., Ltd
Inventor： Shim, Dong-sik , Hong, Seog-woo , Chung, Seok-whan , Kim, Chang-jung
IPC: B06B1/02
CPC classification number: H04R1/00 , B06B1/0292 , H01L21/0237 , H01L21/3043 , H01L21/768 , H01L23/481 , H01L2924/0002 , H04R19/005 , H01L2924/00
Abstract: A capacitive micromachined ultrasonic transducer includes a device substrate including a first trench confining a plurality of first parts corresponding to a plurality of elements and a second trench confining a second part separated from the plurality of first parts, a supporting unit provided on the device substrate for confining a plurality of cavities corresponding to each of the plurality of elements, a membrane provided on the supporting unit to cover the plurality of cavities, an upper electrode provided on the membrane and electrically connected to the second part in the second trench through a via hole passing through the membrane and the supporting unit, and a through-silicon via (TSV) substrate provided on a lower surface of the device substrate, and including a plurality of first via metals connected to the plurality of first parts and a second via metal connected to the second part.
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12.发明公开Microelectromechanical system device and method of manufacturing the microelectromechanical system device 有权一种微机电系统器件及其制造微机电系统装置的方法
公开(公告)号：EP2341030A3
公开(公告)日：2013-07-17
申请号：EP10171574.6
申请日：2010-08-02
Applicant: Samsung Electronics Co., Ltd.
Inventor： Baik, Chan-wook , Hong, Seog-woo , Suh, Hwan-soo
CPC classification number: B81C1/00063 , B81B2201/0271 , B81C1/00619 , B81C2201/019 , H01J25/34 , H01L25/50 , H01L2924/0002 , H01P11/003 , H01L2924/00
Abstract: Provided is a microelectromechanical system (MEMS) that includes a first structure 100 and second structure 200. The first structure and second structure may each include a first substrate 110 and a second substrate 120. The first substrate of each structure may have first and second surfaces that face each other. The first substrate may include a via etching hole pattern penetrating the first surface and the second surface and a first non-via etching hole pattern penetrating the first surface. The second substrate 120 of each structure may have third and fourth surfaces that face each other. The second substrate may include a second non-via etching hole pattern penetrating the third surface in a position corresponding to the via etching hole pattern of the first substrate. In the microelectromechanical system (MEMS) the second surface of the first substrate and the third surface of the second substrate may be bonded together.
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公开(公告)号：EP1411025B1
公开(公告)日：2007-09-19
申请号：EP03256418.9
申请日：2003-10-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Shong, Ci-moo , Chung, Seok-whan , Kang, Seok-jin , Lee, Moon-chul , Jung, Kyu-dong , Kim, Jong-seok , Jun, Chan-bong , Hong, Seog-woo , Kang, Jung-ho
CPC classification number: B81B7/0006 , H01L21/76877 , H01L23/5226 , H01L2924/0002 , H01L2924/00
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14.发明公开Film bulk acoustic resonator and a method for manufacturing the same 有权AkustischerDünnschicht-Volumenwellenresonator und sein Herstellungsverfahren。
公开(公告)号：EP1689080A2
公开(公告)日：2006-08-09
申请号：EP06000147.6
申请日：2006-01-04
Applicant: Samsung Electronics Co., Ltd.
Inventor： Ha, Byeoung-ju , Hong, Seog-woo , Song, In-sang , Choi, Hyung
Abstract: A film bulk acoustic resonator (FBAR) including a substrate (110) having an etched air gap (111) therethrough; a resonance part (141) having a first electrode (141), a piezoelectric film (143) and a second electrode (145) which are laminated in turn above the air gap; and an etching resistance layer disposed between the air gap and the resonance part to limit an etching depth in forming the air gap, thereby preventing damage to the resonance part (140).
Abstract translation: 一种薄膜体声波谐振器（FBAR），包括：具有通过其蚀刻的气隙（111）的衬底（110） 具有第一电极（141），压电膜（143）和第二电极（145）的共振部分（141），其依次层叠在气隙上方; 以及设置在所述气隙和所述共振部之间的耐蚀刻层，以限制形成所述气隙的蚀刻深度，从而防止对所述共振部（140）的损坏。
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15.发明公开Filter comprising thin-film resonators and inductor, duplexer and fabricating methods thereof 有权过滤器Dünnfilmresonatorenund Induktor，Duplexer und deren Herstellungsverfahren
公开(公告)号：EP1598934A2
公开(公告)日：2005-11-23
申请号：EP05253005.2
申请日：2005-05-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Song, In-sang , Ha, Byeoung-ju , Park, Yun-kwon , Kim, Jong-seok , Kim, Duck-hwan , Nam, Kuang-woo , Park, Hae-seok , Hong, Seog-woo
CPC classification number: H03H9/564 , H03H3/02 , H03H9/0542 , H03H9/0571 , H03H9/173 , H03H9/568 , H03H9/605 , H03H9/706 , Y10T29/42
Abstract: A filter using an air gap type film bulk acoustic resonator is provided. The present filter includes a substrate on which a first port, a second port, and a ground port are formed to be connected to an external terminal; at least one first film bulk acoustic resonator serially connecting the first port to the second port on the substrate; at least one second film bulk acoustic resonator parallel connected to an interconnection node formed between the first port and the second port; and at least one inductor serially connecting the second film bulk acoustic resonator to the ground port. The inductor included in the filter is fabricated with the first and second film bulk acoustic resonators as one body. Accordingly, a small-sized filter may be fabricated through a simplified process.
Abstract translation: 提供了使用气隙型膜体声波谐振器的滤波器。 本发明的滤波器包括：基板，其上形成有第一端口，第二端口和接地端口，以连接到外部端子; 至少一个第一膜体积声谐振器将第一端口与基板上的第二端口串联连接; 至少一个第二膜体声波谐振器并联连接到形成在所述第一端口和所述第二端口之间的互连节点; 以及将所述第二膜体声波谐振器串联连接到所述接地端口的至少一个电感器。 包括在滤波器中的电感器由第一和第二膜体声波谐振器制成为一体。 因此，可以通过简化的过程制造小尺寸滤波器。
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Patent Agency Ranking
公开(公告)号：EP1411025A2
公开(公告)日：2004-04-21
申请号：EP03256418.9
申请日：2003-10-10
Applicant: Samsung Electronics Co., Ltd.
Inventor： Shong, Ci-moo , Chung, Seok-whan , Kang, Seok-jin , Lee, Moon-chul , Jung, Kyu-dong , Kim, Jong-seok , Jun, Chan-bong , Hong, Seog-woo , Kang, Jung-ho
CPC classification number: B81B7/0006 , H01L21/76877 , H01L23/5226 , H01L2924/0002 , H01L2924/00
Abstract: A metal wiring method for an undercut in a MEMS packaging process includes disposing a MEMS element on a silicon substrate, welding a glass wafer to an upper portion of the silicon substrate having the MEMS element disposed thereon, the glass wafer having a hole formed therein for connecting a metal wiring, depositing a thin metal film for the metal wiring in the hole, and ion-milling the deposited thin metal film. By the ion-milling, the method is capable of connecting a metal wiring to a via hole having an undercut.
Abstract translation: 在MEMS封装工艺中用于底切的金属布线方法包括：将MEMS元件设置在硅衬底上，将玻璃晶片焊接到其上设置有MEMS元件的硅衬底的上部，所述玻璃晶片具有形成在其中的孔，用于 连接金属布线，在该孔中沉积用于金属布线的薄金属膜，以及离子铣削沉积的薄金属膜。 通过离子铣削，该方法能够将金属布线连接到具有底切的通孔。
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公开(公告)号：EP1689080B1
公开(公告)日：2017-03-15
申请号：EP06000147.6
申请日：2006-01-04
Applicant: Samsung Electronics Co., Ltd.
Inventor： Ha, Byeoung-ju , Hong, Seog-woo , Song, In-sang , Choi, Hyung
Abstract: A film bulk acoustic resonator (FBAR) including a substrate (110) having an etched air gap (111) therethrough; a resonance part (141) having a first electrode (141), a piezoelectric film (143) and a second electrode (145) which are laminated in turn above the air gap; and an etching resistance layer disposed between the air gap and the resonance part to limit an etching depth in forming the air gap, thereby preventing damage to the resonance part (140).
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公开(公告)号：EP2907588A2
公开(公告)日：2015-08-19
申请号：EP14178357.1
申请日：2014-07-24
Applicant: Samsung Electronics Co., Ltd
Inventor： Hong, Seog-woo , Shin, Hyung-jae , Shim, Dong-sik , Jeong, Byung-gil , Chung, Seok-whan
IPC: B06B1/02
CPC classification number: H04R23/00 , B06B1/0292 , B06B1/0685 , G10K11/002 , H04R2201/003
Abstract: An electro-acoustic transducer includes a conductive substrate provided with at least one cell and at least one electrode, and a pad substrate disposed corresponding to the conductive substrate and provided with at least one pad corresponding to the electrode, in which at least one of the electrode and the pad includes an electric pattern for electric connection and at least one dummy pattern that is provided around the electric pattern to be separated the electric pattern.
Abstract translation: 电声换能器包括设置有至少一个电池和至少一个电极的导电衬底以及与导电衬底相对设置并且设置有至少一个对应于电极的焊盘的焊盘衬底，其中，至少一个电极 电极和焊盘包括用于电连接的电图案和设置在电图案周围以分离电图案的至少一个虚设图案。
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19.发明公开Capacitive micromachined ultrasonic transducer and method of fabricating the same 审中-公开电容式微机械超声波换能器及其制造方法
公开(公告)号：EP2881182A2
公开(公告)日：2015-06-10
申请号：EP14178360.5
申请日：2014-07-24
Applicant: Samsung Electronics Co., Ltd
Inventor： Shim, Dong-sik , Hong, Seog-woo , Chung, Seok-whan , Kim, Chang-jung
IPC: B06B1/02
CPC classification number: H04R1/00 , B06B1/0292 , H01L21/0237 , H01L21/3043 , H01L21/768 , H01L23/481 , H01L2924/0002 , H04R19/005 , H01L2924/00
Abstract: A capacitive micromachined ultrasonic transducer includes a device substrate including a first trench confining a plurality of first parts corresponding to a plurality of elements and a second trench confining a second part separated from the plurality of first parts, a supporting unit provided on the device substrate for confining a plurality of cavities corresponding to each of the plurality of elements, a membrane provided on the supporting unit to cover the plurality of cavities, an upper electrode provided on the membrane and electrically connected to the second part in the second trench through a via hole passing through the membrane and the supporting unit, and a through-silicon via (TSV) substrate provided on a lower surface of the device substrate, and including a plurality of first via metals connected to the plurality of first parts and a second via metal connected to the second part.
Abstract translation: 一种电容式微机械超声波换能器，包括：器件衬底，包括限制与多个元件对应的多个第一部分的第一沟槽和限制与多个第一部分分离的第二部分的第二沟槽;支撑单元，设置在器件衬底上 限制与所述多个元件中的每一个相对应的多个空腔;设置在所述支撑单元上以覆盖所述多个空腔的膜;设置在所述膜上并且通过通孔电连接到所述第二沟槽中的所述第二部分的上电极 穿过所述膜和所述支撑单元，以及硅通孔（TSV）衬底，设置在所述器件衬底的下表面上，并且包括连接到所述多个第一部分的多个第一通孔金属以及连接到所述多个第一部分的第二通孔金属 到第二部分。
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20.发明授权Filter comprising thin-film resonators and inductor, duplexer and fabricating methods thereof 有权与薄膜谐振器和电感器双工器和它们的制造工艺过滤
公开(公告)号：EP1598934B1
公开(公告)日：2013-11-06
申请号：EP05253005.2
申请日：2005-05-17
Applicant: Samsung Electronics Co., Ltd.
Inventor： Song, In-sang , Ha, Byeoung-ju , Park, Yun-kwon , Kim, Jong-seok , Kim, Duck-hwan , Nam, Kuang-woo , Park, Hae-seok , Hong, Seog-woo
CPC classification number: H03H9/564 , H03H3/02 , H03H9/0542 , H03H9/0571 , H03H9/173 , H03H9/568 , H03H9/605 , H03H9/706 , Y10T29/42
Abstract: A filter using an air gap type film bulk acoustic resonator is provided. The present filter includes a substrate on which a first port, a second port, and a ground port are formed to be connected to an external terminal; at least one first film bulk acoustic resonator serially connecting the first port to the second port on the substrate; at least one second film bulk acoustic resonator parallel connected to an interconnection node formed between the first port and the second port; and at least one inductor serially connecting the second film bulk acoustic resonator to the ground port. The inductor included in the filter is fabricated with the first and second film bulk acoustic resonators as one body. Accordingly, a small-sized filter may be fabricated through a simplified process.
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