公开(公告)号：EP1418154A3

公开(公告)日：2005-08-31

申请号：EP03256889.1

申请日：2003-10-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung, Kyu-dong, 662-1701 Sinnamusil ,  Choi, Hyung ,  Jun, Chan-bong ,  Kang, Seok-jin ,  Hong, Seog-woo ,  Chung, Seok-whan ,  Lee, Moon-chul ,  Lee, Eun-sung

IPC: B81C5/00 ,  B81C1/00

CPC classification number: B81C1/00285

Abstract: A method and apparatus for vacuum-mounting at least one micro electro mechanical system (MEMS) on a substrate includes a gas injecting section for injecting an inert gas into a vacuum chamber; a substrate aligning section for aligning a semiconductor substrate and a cover, the cover having a cavity formed therein and a getter attached to an interior surface of the cavity; a bonding section for bonding the semiconductor substrate and the cover together; and a controlling section for controlling the substrate aligning section to align the semiconductor and the cover, for controlling the gas injecting section to inject the inert gas into the vacuum chamber, and for controlling the bonding section to bond the semiconductor substrate and the cover together after the inert gas is injected.

公开(公告)号：EP1411025A3

公开(公告)日：2004-11-03

申请号：EP03256418.9

申请日：2003-10-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Shong, Ci-moo ,  Chung, Seok-whan ,  Kang, Seok-jin ,  Lee, Moon-chul ,  Jung, Kyu-dong ,  Kim, Jong-seok ,  Jun, Chan-bong ,  Hong, Seog-woo ,  Kang, Jung-ho

IPC: B81C1/00 ,  B81B7/00 ,  B81B1/00

CPC classification number: B81B7/0006 ,  H01L21/76877 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A metal wiring method for an undercut in a MEMS packaging process includes disposing a MEMS element on a silicon substrate, welding a glass wafer to an upper portion of the silicon substrate having the MEMS element disposed thereon, the glass wafer having a hole formed therein for connecting a metal wiring, depositing a thin metal film for the metal wiring in the hole, and ion-milling the deposited thin metal film. By the ion-milling, the method is capable of connecting a metal wiring to a via hole having an undercut.

公开(公告)号：EP2907588A3

公开(公告)日：2015-12-16

申请号：EP14178357.1

申请日：2014-07-24

Applicant: Samsung Electronics Co., Ltd

Inventor： Hong, Seog-woo ,  Shin, Hyung-jae ,  Shim, Dong-sik ,  Jeong, Byung-gil ,  Chung, Seok-whan

IPC: B06B1/02

CPC classification number: H04R23/00 ,  B06B1/0292 ,  B06B1/0685 ,  G10K11/002 ,  H04R2201/003

Abstract: An electro-acoustic transducer includes a conductive substrate provided with at least one cell and at least one electrode, and a pad substrate disposed corresponding to the conductive substrate and provided with at least one pad corresponding to the electrode, in which at least one of the electrode and the pad includes an electric pattern for electric connection and at least one dummy pattern that is provided around the electric pattern to be separated the electric pattern.

Abstract translation: 一种电声换能器包括：导电衬底，其设置有至少一个单元和至少一个电极;以及衬垫衬底，其对应于所述导电衬底而设置并且设置有与所述电极相对应的至少一个衬垫，其中至少一个 电极，并且所述垫包括用于电连接的电图案和至少一个虚设图案，所述虚设图案围绕所述电图案设置以与所述电图案分离。

公开(公告)号：EP1659688B1

公开(公告)日：2010-01-13

申请号：EP05024698.2

申请日：2005-11-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Park, Yun-kwon ,  Song, In-sang ,  Yun, Seok-chul ,  Hong, Seog-woo ,  Ha, Byeoung-ju ,  Shim, Dong-ha ,  Park, Hae-seok ,  Nam, Kuang-woo ,  Kim, Duck-hwan

IPC: H03H9/70 ,  H03H9/10 ,  H03H9/58 ,  H03H3/02

CPC classification number: H03H3/02 ,  H03H9/0571 ,  H03H9/706 ,  Y10T29/42 ,  Y10T29/43 ,  Y10T29/4902 ,  Y10T29/49155

公开(公告)号：EP1598934A3

公开(公告)日：2007-11-14

申请号：EP05253005.2

申请日：2005-05-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Song, In-sang ,  Ha, Byeoung-ju ,  Park, Yun-kwon ,  Kim, Jong-seok ,  Kim, Duck-hwan ,  Nam, Kuang-woo ,  Park, Hae-seok ,  Hong, Seog-woo

IPC: H03H9/58 ,  H03H9/70 ,  H03H9/17 ,  H03H9/05 ,  H03H3/02

CPC classification number: H03H9/564 ,  H03H3/02 ,  H03H9/0542 ,  H03H9/0571 ,  H03H9/173 ,  H03H9/568 ,  H03H9/605 ,  H03H9/706 ,  Y10T29/42

Abstract: A filter using an air gap type film bulk acoustic resonator is provided. The present filter includes a substrate on which a first port, a second port, and a ground port are formed to be connected to an external terminal; at least one first film bulk acoustic resonator serially connecting the first port to the second port on the substrate; at least one second film bulk acoustic resonator parallel connected to an interconnection node formed between the first port and the second port; and at least one inductor serially connecting the second film bulk acoustic resonator to the ground port. The inductor included in the filter is fabricated with the first and second film bulk acoustic resonators as one body. Accordingly, a small-sized filter may be fabricated through a simplified process.

公开(公告)号：EP1684420A3

公开(公告)日：2007-10-10

申请号：EP06001244.0

申请日：2006-01-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hong, Seog-woo ,  Ha, Byeoung-ju ,  Song, In-sang ,  Kim, Kyu-sik

IPC: H03H3/02 ,  H03H9/02 ,  H03H9/58 ,  B81C1/00

CPC classification number: H03H3/02 ,  H03H9/02047 ,  H03H9/588 ,  H03H2003/023

Abstract: A band filter using a film bulk acoustic resonator and a method of fabricating the same. The method includes the steps of forming a membrane layer on a substrate, forming a plurality of resonators on an upper surface of the membrane layer, depositing a mask layer on a lower surface of the membrane layer and patterning the mask layer to form a plurality of main windows and sub windows, and forming cavities along the main windows in the substrate and forming sub walls in the cavities in such a way that the sub walls are separated apart from the membrane layer by using the notch effect caused during a dry etching. It is possible to precisely form cavities with desired sizes even if the cavities have different sizes, to reduce the notched areas in the cavities, to reduce the total size of the filter by decreasing a distance between the cavities and to reduce the total length of wires.

公开(公告)号：EP2341030B1

公开(公告)日：2016-07-06

申请号：EP10171574.6

申请日：2010-08-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Baik, Chan-wook ,  Hong, Seog-woo ,  Suh, Hwan-soo

IPC: H01J25/34 ,  B81C1/00 ,  H01L23/66 ,  H01P11/00 ,  H01L25/00

CPC classification number: B81C1/00063 ,  B81B2201/0271 ,  B81C1/00619 ,  B81C2201/019 ,  H01J25/34 ,  H01L25/50 ,  H01L2924/0002 ,  H01P11/003 ,  H01L2924/00

公开(公告)号：EP2341030A2

公开(公告)日：2011-07-06

申请号：EP10171574.6

申请日：2010-08-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Baik, Chan-wook ,  Hong, Seog-woo ,  Suh, Hwan-soo

IPC: B81C1/00 ,  B81C99/00

CPC classification number: B81C1/00063 ,  B81B2201/0271 ,  B81C1/00619 ,  B81C2201/019 ,  H01J25/34 ,  H01L25/50 ,  H01L2924/0002 ,  H01P11/003 ,  H01L2924/00

Abstract: Provided is a microelectromechanical system (MEMS) that includes a first structure 100 and second structure 200. The first structure and second structure may each include a first substrate 110 and a second substrate 120. The first substrate of each structure may have first and second surfaces that face each other. The first substrate may include a via etching hole pattern penetrating the first surface and the second surface and a first non-via etching hole pattern penetrating the first surface. The second substrate 120 of each structure may have third and fourth surfaces that face each other. The second substrate may include a second non-via etching hole pattern penetrating the third surface in a position corresponding to the via etching hole pattern of the first substrate. In the microelectromechanical system (MEMS) the second surface of the first substrate and the third surface of the second substrate may be bonded together.

Abstract translation: 提供了包括第一结构100和第二结构200的微机电系统（MEMS）。第一结构和第二结构可以各自包括第一基板110和第二基板120.每个结构的第一基板可以具有第一和第二表面 面对面。 第一基板可以包括穿透第一表面和第二表面的通孔蚀刻孔图案和穿过第一表面的第一非通孔蚀刻孔图案。 每个结构的第二基板120可以具有彼此面对的第三和第四表面。 第二基板可以包括在对应于第一基板的通孔蚀刻孔图案的位置中穿透第三表面的第二非通孔蚀刻孔图案。 在微电子机械系统（MEMS）中，第一基板的第二表面和第二基板的第三表面可以结合在一起。

公开(公告)号：EP1689080A3

公开(公告)日：2006-11-02

申请号：EP06000147.6

申请日：2006-01-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ha, Byeoung-ju ,  Hong, Seog-woo ,  Song, In-sang ,  Choi, Hyung

IPC: H03H9/17 ,  H03H3/02

CPC classification number: H03H3/02 ,  H03H9/174 ,  Y10T29/42

Abstract: A film bulk acoustic resonator (FBAR) including a substrate (110) having an etched air gap (111) therethrough; a resonance part (141) having a first electrode (141), a piezoelectric film (143) and a second electrode (145) which are laminated in turn above the air gap; and an etching resistance layer disposed between the air gap and the resonance part to limit an etching depth in forming the air gap, thereby preventing damage to the resonance part (140).

公开(公告)号：EP1684420A2

公开(公告)日：2006-07-26

申请号：EP06001244.0

申请日：2006-01-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hong, Seog-woo ,  Ha, Byeoung-ju ,  Song, In-sang ,  Kim, Kyu-sik

IPC: H03H3/02 ,  H03H9/02 ,  H03H9/58 ,  B81C1/00

CPC classification number: H03H3/02 ,  H03H9/02047 ,  H03H9/588 ,  H03H2003/023

Abstract: A band filter using a film bulk acoustic resonator and a method of fabricating the same. The method includes the steps of forming a membrane layer on a substrate, forming a plurality of resonators on an upper surface of the membrane layer, depositing a mask layer on a lower surface of the membrane layer and patterning the mask layer to form a plurality of main windows and sub windows, and forming cavities along the main windows in the substrate and forming sub walls in the cavities in such a way that the sub walls are separated apart from the membrane layer by using the notch effect caused during a dry etching. It is possible to precisely form cavities with desired sizes even if the cavities have different sizes, to reduce the notched areas in the cavities, to reduce the total size of the filter by decreasing a distance between the cavities and to reduce the total length of wires.

Abstract translation: 一种使用膜体声波谐振器的带滤波器及其制造方法。 该方法包括以下步骤：在衬底上形成膜层，在膜层的上表面上形成多个谐振器，在膜层的下表面上沉积掩模层，并对掩模层进行图案化以形成多个 主窗口和子窗口，并且沿着基板中的主窗口形成空腔，并且以这样的方式在空腔中形成子壁，使得通过使用在干蚀刻期间引起的切口效应，子壁与膜层分离。 即使空腔具有不同的尺寸，也可以精确地形成具有期望尺寸的空腔，以减少空腔中的凹口区域，以通过减小空腔之间的距离来减小过滤器的总尺寸，并减小导线的总长度 。