公开(公告)号：US10478515B2

公开(公告)日：2019-11-19

申请号：US15622004

申请日：2017-06-13

Applicant: Sensor Electronic Technology, Inc.

Inventor： Michael Shur ,  Maxim S. Shatalov ,  Timothy James Bettles ,  Yuri Bilenko ,  Saulius Smetona ,  Alexander Dobrinsky ,  Remigijus Gaska

IPC: G05D23/00 ,  F25D3/04 ,  F25D3/00 ,  A61L9/20 ,  A61L2/10

Abstract: Ultraviolet radiation is directed within an area. The target wavelength ranges and/or target intensity ranges of the ultraviolet radiation sources can correspond to at least one of a plurality of selectable operating configurations including a virus destruction operating configuration and a bacteria disinfection operating configuration. Each configuration can include a unique combination of the target wavelength range and target intensity range.

公开(公告)号：US20190336629A1

公开(公告)日：2019-11-07

申请号：US16460006

申请日：2019-07-02

Applicant: Sensor Electronic Technology, Inc.

Inventor： Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: A61L2/10 ,  E03D9/00

Abstract: A solution for cleaning and/or sterilizing one or more surfaces in a bathroom is provided. The sterilization can be performed using ultraviolet sources, which can emit ultraviolet radiation directed onto the surface(s). The cleaning can be performed using a fluid, such as water, that is flowed over the surface(s). The surface(s) can include at least a seat of a toilet and/or other surfaces associated with the toilet.

公开(公告)号：US10461221B2

公开(公告)日：2019-10-29

申请号：US15409438

申请日：2017-01-18

Applicant: Sensor Electronic Technology, Inc.

Inventor： Alexander Dobrinsky ,  Michael Shur

IPC: H01L33/22 ,  H01L33/00 ,  H01L33/06 ,  H01L33/10 ,  H01L33/12 ,  H01L33/14 ,  H01L33/32 ,  H01L33/38

Abstract: A semiconductor structure for use in fabricating a semiconductor device having improved light propagation is provided. The structure includes at least one layer transparent to radiation having a target wavelength relevant to operation of the semiconductor device. During operation of the semiconductor device, radiation of the target wavelength enters the transparent layer through a first side and exits the transparent layer through a second side. At least one of the first side or the second side comprises a profiled surface. The profiled surface includes a plurality of vacancies fabricated in the material of the layer. Each vacancy comprises side walls configured for at least partial diffusive scattering of the radiation of the target wavelength.

公开(公告)号：US10460952B2

公开(公告)日：2019-10-29

申请号：US16022939

申请日：2018-06-29

Applicant: Sensor Electronic Technology, Inc.

Inventor： Maxim S. Shatalov ,  Jinwei Yang ,  Wenhong Sun ,  Rakesh Jain ,  Michael Shur ,  Remigijus Gaska

IPC: H01L21/308 ,  H01L29/20 ,  H01L21/02 ,  H01L29/66 ,  H01L29/15 ,  H01L33/00 ,  H01L33/12 ,  H01L33/22 ,  H01L33/32

Abstract: A semiconductor structure, such as a group III nitride-based semiconductor structure is provided. The semiconductor structure includes a cavity containing semiconductor layer. The cavity containing semiconductor layer can have a thickness greater than two monolayers and a multiple cavities. The cavities can have a characteristic size of at least one nanometer and a characteristic separation of at least five nanometers.

公开(公告)号：US10456486B2

公开(公告)日：2019-10-29

申请号：US15852988

申请日：2017-12-22

Applicant: Sensor Electronic Technology, Inc.

Inventor： Saulius Smetona ,  Alexander Dobrinsky ,  Yuri Bilenko ,  Michael Shur

IPC: A61L2/10 ,  H05B33/08 ,  H05B37/02

Abstract: A solution for generating ultraviolet diffusive radiation is provided. A diffusive ultraviolet radiation illuminator includes at least one ultraviolet radiation source located within a reflective cavity that includes a plurality of surfaces. At least one of the plurality of surfaces can be configured to diffusively reflect at least 70% of the ultraviolet radiation and at least one of the plurality of surfaces can be configured to transmit at least 30% of the ultraviolet radiation and reflect at least 10% of the ultraviolet radiation.

公开(公告)号：US10426852B2

公开(公告)日：2019-10-01

申请号：US15853068

申请日：2017-12-22

Applicant: Sensor Electronic Technology, Inc.

Inventor： Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska ,  Timothy James Bettles

IPC: G01J1/42 ,  A61L2/10 ,  A61L2/24 ,  G01N21/64 ,  A61L9/00 ,  A61L9/20 ,  A61L2/00 ,  G01N21/94

Abstract: A system capable of detecting and/or sterilizing surface(s) of an object using ultraviolet radiation is provided. The system can include a disinfection chamber and/or handheld ultraviolet unit, which includes ultraviolet sources for inducing fluorescence in a contaminant and/or sterilizing a surface of an object. The object can comprise a protective suit, which is worn by a user and also can include ultraviolet sources for disinfecting air prior to the air entering the protective suit. The system can be implemented as a multi-tiered system for protecting the user and others from exposure to the contaminant and sterilizing the protective suit after exposure to an environment including the contaminant.

公开(公告)号：US10383964B2

公开(公告)日：2019-08-20

申请号：US15700533

申请日：2017-09-11

Applicant: Sensor Electronic Technology, Inc.

Inventor： Maxim S. Shatalov ,  Timothy James Bettles ,  Alexander Dobrinsky ,  Remigijus Gaska ,  Michael Shur

IPC: A61L2/10 ,  F25D17/04 ,  G01N27/12 ,  G01G19/52 ,  H04N5/33 ,  H04N7/18

Abstract: Ultraviolet radiation is directed within an area. Items located within the area and/or one or more conditions of the area are monitored over a period of time. Based on the monitoring, ultraviolet radiation sources are controlled by adjusting a direction, an intensity, a pattern, and/or a spectral power of the ultraviolet radiation generated by the ultraviolet radiation source. Adjustments to the ultraviolet radiation source(s) can correspond to one of a plurality of selectable operating configurations including a storage life preservation operating configuration, a disinfection operating configuration, and an ethylene decomposition operating configuration.

公开(公告)号：US10347793B2

公开(公告)日：2019-07-09

申请号：US15784905

申请日：2017-10-16

Applicant: Sensor Electronic Technology, Inc.

Inventor： Alexander Lunev ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: H01L33/40 ,  H01L33/38 ,  H01L33/00 ,  H01L29/225 ,  H01L29/205 ,  H01L31/0336 ,  H01L29/267 ,  H01L31/00 ,  H01L33/14 ,  H01L31/0224 ,  H01L33/24 ,  H01L33/08

Abstract: A contact to a semiconductor layer in a light emitting structure is provided. The contact can include a plurality of contact areas formed of a metal and separated by a set of voids. The contact areas can be separated from one another by a characteristic distance selected based on a set of attributes of a semiconductor contact structure of the contact and a characteristic contact length scale of the contact. The voids can be configured to increase an overall reflectivity or transparency of the contact.

公开(公告)号：US10314928B2

公开(公告)日：2019-06-11

申请号：US15633118

申请日：2017-06-26

Applicant: Sensor Electronic Technology, Inc.

Inventor： Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: A61L2/10 ,  A43B17/10 ,  A43B1/00 ,  A43B3/00

Abstract: An ultraviolet (UV) footwear illuminator for footwear treatment is disclosed. In one embodiment, the UV footwear illuminator includes an insert adapted for placement in an article of footwear. At least one UV radiation source is located in the insert and is configured to emit UV radiation in the footwear through a transparent window region formed in the insert. A control unit is configured to control at least one predetermined UV radiation characteristics associated with the radiation emitted from each UV radiation source. A power supply is configured to power each UV radiation source and the control unit.

公开(公告)号：US10224408B2

公开(公告)日：2019-03-05

申请号：US15601128

申请日：2017-05-22

Applicant: Sensor Electronic Technology, Inc.

Inventor： Mikhail Gaevski ,  Grigory Simin ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: H01L33/38 ,  H01L29/45 ,  H01L29/20 ,  H01L21/285 ,  H01L29/417 ,  H01L29/778

Abstract: A perforating ohmic contact to a semiconductor layer in a semiconductor structure is provided. The perforating ohmic contact can include a set of perforating elements, which can include a set of metal protrusions laterally penetrating the semiconductor layer(s). The perforating elements can be separated from one another by a characteristic length scale selected based on a sheet resistance of the semiconductor layer and a contact resistance per unit length of a metal of the perforating ohmic contact contacting the semiconductor layer. The structure can be annealed using a set of conditions configured to ensure formation of the set of metal protrusions.