公开(公告)号：EP0661244A2

公开(公告)日：1995-07-05

申请号：EP94114943.7

申请日：1994-09-22

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Summerfelt, Scott R. ,  Beratan, Howard R. ,  Kulwicki, Bernard

IPC: C04B35/49

CPC classification number: C04B35/465 ,  C04B35/62218

Abstract: The invention described forms improved ferroelectric (or pyroelectric) layer by adding lead to an original perovskite layer having an original ferroelectric (or pyroelectric) critical grain size, then forming a layer of the lead enhanced perovskite layer having an average grain size less than the original ferroelectric (or pyroelectric) critical grain size whereby the remanent polarization (or pyroelectric figure of merit) of the layer is substantially greater than the remanent polarization (or pyroelectric figure of merit) of the original perovskite layer with an average grain size similar to the average grain size of the layer. The critical ferroelectric (or pyroelectric) grain size, as used herein, means the largest grain size such that the remanent polarization (or pyroelectric figure of merit) starts to rapidly decrease with decreasing grain sizes. Preferably, n-type lead enhanced perovskite layer is doped with one or more acceptor dopants whereby the resistivity is substantially increased. Preferably, p-type lead enhanced perovskite layer is doped with one or more donor dopants whereby the resistivity is substantially increased. Preferably, the original perovskite layer has a chemical composition ABO 3 , where A is one or more monovalent, divalent or trivalent elements, and B is one or more pentavalent, tetravalent, trivalent or divalent elements. Structures containing an improved ferroelectric (or pyroelectric) layer include a layer of lead enhanced perovskite layer with average grain size less than the original ferroelectric (or pyroelectric) critical grain size formed on the surface of a substrate. Other structures include such a layer of lead enhanced layer interposed between two electrically conducting layers.

Abstract translation: 本发明描述了通过将铅添加到具有原始铁电（或热释电）临界晶粒尺寸的原始钙钛矿层中形成改进的铁电（或热电）层，然后形成平均晶粒尺寸小于原始的铁电（或热电）层的铅增强的钙钛矿层 铁电（或热电）临界晶粒尺寸，其中该层的剩余极化（或热释电特性）基本上大于原始钙钛矿层的剩余极化（或热释电特性），平​​均晶粒尺寸类似于平均值 晶粒尺寸的层。 如本文所用，临界铁电（或热电）晶粒尺寸是指最大的晶粒尺寸，使得剩余极化（或热释电品质因数）开始随着晶粒尺寸的减小而迅速降低。 优选地，n型铅增强的钙钛矿层掺杂有一种或多种受体掺杂剂，由此电阻率显着增加。 优选地，p型铅增强的钙钛矿层掺杂有一个或多个施主掺杂剂，由此电阻率显着增加。 优选地，原始钙钛矿层具有化学组成ABO 3，其中A是一个或多个一价，二价或三价元素，B是一种或多种五价，四价，三价或二价元素。 包含改进的铁电（或热电）层的结构包括平均晶粒尺寸小于在基底表面上形成的原始铁电（或热电）临界晶粒尺寸的铅增强的钙钛矿层。 其他结构包括插入在两个导电层之间的这种铅增强层。

公开(公告)号：EP0607501A3

公开(公告)日：1995-06-07

申请号：EP93115623.6

申请日：1993-09-28

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Summerfelt, Scott R. ,  Kulwicki, Bernard M. ,  Beratan, Howard R.

IPC: C04B35/46 ,  H01G4/12 ,  H01L27/115

CPC classification number: C04B35/465 ,  H01L37/025

Abstract: The invention described forms improved ferroelectric (or pyroelectric) material by doping an intrinsic perovskite material having an intrinsic ferroelectric (or pyroelectric) critical grain size with one or more donor dopants, then forming a layer of the donor doped perovskite material having an average grain size less than the intrinsic ferroelectric (or pyroelectric) critical grain size whereby the remanent polarization (or pyroelectric figure of merit) of the layer is substantially greater than the remanent polarization (or pyroelectric figure of merit) of the intrinsic perovskite material with an average grain size similar to the average grain size of the layer. The critical ferroelectric (or pyroelectric) grain size, as used herein, means the largest grain size such that the remanent polarization (or pyroelectric figure of merit) starts to rapidly decrease with decreasing grain sizes. Preferably, the donor doped perovskite material is further doped with one or more acceptor dopants to form a donor-acceptor doped perovskite material whereby the resistivity is substantially increased. Preferably, the intrinsic perovskite material has a chemical composition ABO₃, where A is one or more monovalent, divalent or trivalent elements, and B is one or more pentavalent, tetravalent, trivalent or divalent elements. Structures containing an improved ferroelectric (or pyroelectric) material include a layer of donor doped perovskite material with average grain size less than the intrinsic ferroelectric (or pyroelectric) critical grain size formed on the surface of a substrate. Other structures include such a layer of donor doped material interposed between two electrically conducting layers.

公开(公告)号：EP0827216A2

公开(公告)日：1998-03-04

申请号：EP97115009.9

申请日：1997-08-29

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Beratan, Howard R.

IPC: H01L37/02

CPC classification number: H01L37/02

Abstract: Electrode assembly (36) may comprise a first thin film electrode (52), a dielectric element (50), and a second thin film electrode (54). The first thin film electrode (52) may comprise a solid solution of at least two components. The dielectric element (50) may be in electrical communication with the first thin film electrode (52). The second thin film electrode (54) may be in electrical communication with the dielectric element (50) opposite the first thin film electrode (52).

Abstract translation: 电极组件（36）可以包括第一薄膜电极（52），电介质元件（50）和第二薄膜电极（54）。 第一薄膜电极（52）可以包括至少两个组分的固溶体。 电介质元件（50）可以与第一薄膜电极（52）电连通。 第二薄膜电极（54）可以与与第一薄膜电极（52）相对的电介质元件（50）电连通。

公开(公告)号：EP0721226A2

公开(公告)日：1996-07-10

申请号：EP95309543.7

申请日：1995-12-29

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Belcher, James F. ,  Summerfelt, Scott R. ,  Beratan, Howard R.

IPC: H01L37/02

CPC classification number: H01L37/02 ,  G01J5/34 ,  Y10S438/942

Abstract: An array of thermal sensor elements (16) is formed from a pyroelectric substrate (46) having an infrared absorber and common electrode assembly (18) attached thereto. A first layer of metal contacts (60) is formed to define masked (61) and unmasked (68) regions of the substrate (46). A second layer of metal contacts (62) is formed on the first layer of contacts (60). A radiation etch mask layer (66) is formed to encapsulate the exposed portions of the second layer of contacts (62). A dry-etch mask layer (74) is formed to encapsulate the exposed portions of the first layer of contacts (60) and radiation etch mask layer (66). An initial portion of each unmasked region (68) is etched using a dry-etch process. The remaining portions of the unmasked regions (68) are exposed to an etchant (70) and irradiated with electromagnetic energy to substantially increase the reactivity between the remaining portions and the etchant (70). During such irradiation, the etchant (70) etches the remaining portions substantially faster than the first layer of contacts (60) and the radiation etch mask layer (66).

Abstract translation: 一个热传感器元件阵列（16）由具有红外线吸收体和附着于其上的公共电极组件（18）的热电基片（46）形成。 形成金属触点（60）的第一层以限定衬底（46）的掩模（61）和未屏蔽（68）区域。 第二层金属触点（62）形成在第一层触点（60）上。 形成辐射蚀刻掩模层（66）以封装第二层触点（62）的暴露部分。 形成干蚀刻掩模层（74）以封装第一层触点（60）和辐射蚀刻掩模层（66）的暴露部分。 使用干蚀刻工艺蚀刻每个未掩模区域（68）的初始部分。 未掩蔽区域（68）的剩余部分暴露于蚀刻剂（70）并用电磁能照射，以显着增加其余部分和蚀刻剂（70）之间的反应性。 在这种照射期间，蚀刻剂（70）基本上比第一层触点（60）和辐射蚀刻掩模层（66）更快地蚀刻剩余部分。

公开(公告)号：EP0721224A2

公开(公告)日：1996-07-10

申请号：EP95309541.1

申请日：1995-12-29

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Beratan, Howard R.

IPC: H01L37/02 ,  H04N5/33

CPC classification number: H01L37/02 ,  G01J5/34 ,  H04N5/33 ,  Y10T29/42 ,  Y10T29/4913 ,  Y10T29/49144 ,  Y10T29/49156

Abstract: A hybrid thermal imaging system (20, 120) often includes a focal plane array (30, 130), a thermal isolation structure (50, 150) and an integrated circuit substrate (60, 160). The focal plane array (30, 130) includes thermal sensitive elements (42, 142) formed from a pyroelectric film layer (82), such as barium strontium titanate (BST). One side of the thermal sensitive elements (42, 142) may be coupled to a contact pad (62, 162) disposed on the integrated circuit substrate (60, 160) through a mesa strip conductor (56, 150) of the thermal isolation structure (50, 150). The other side of the thermal sensitive elements (42, 142) may be coupled to an electrode (36, 136). The various components of the focal plane array (30, 130) may be fabricated from multiple heterogenous layers (74, 34, 36, 82, 84) formed on a carrier substrate (70).

Abstract translation: 混合热成像系统（20,120）通常包括焦平面阵列（30,130），热隔离结构（50,150）和集成电路基板（60,160）。 焦平面阵列（30,130）包括由热电膜层（82）形成的热敏元件（42,142），例如钛酸钡锶（BST）。 热敏元件（42,142）的一侧可以通过隔热结构的台面导体（56,150）耦合到设置在集成电路基板（60,160）上的接触焊盘（62,162） （50,150）。 热敏元件（42,142）的另一侧可以耦合到电极（36,136）。 焦平面阵列（30,130）的各种组件可以由形成在载体衬底（70）上的多个非均匀层（74,34,36,82,84）制成。

公开(公告)号：EP0567063A3

公开(公告)日：1994-03-09

申请号：EP93106374.7

申请日：1993-04-20

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Douglas, Monte A. ,  Summerfelt, Scott R. ,  Beratan, Howard R.

IPC: H01L21/311 ,  H01L41/24 ,  H01L39/24 ,  C04B41/53

CPC classification number: G03F7/2041 ,  C04B41/5353 ,  C04B41/91 ,  H01L21/31111 ,  H01L28/55

Abstract: A metal oxide substrate (e.g. barium strontium titanate 34 ) is immersed in a liquid ambient (e.g. 12 molar concentration hydrochloric acid 30 ) and illuminated with radiation (e.g. collimated visible/ultraviolet radiation 24 ) produced by a radiation source (e.g. a 200 Watt mercury xenon arc lamp 20 ). A window 26 which is substantially transparent to the collimated radiation 24 allows the radiated energy to reach the metal oxide substrate 34 . An etch mask 32 may be positioned between the radiation source 20 and the substrate 34 . The metal oxide substrate 34 and liquid ambient 30 are maintained at a nominal temperature (e.g. 25 °C). Without illumination, the metal oxide is not appreciably etched by the liquid ambient. Upon illumination the etch rate is substantially increased.

Abstract translation: 将金属氧化物基材（例如钛酸钡锶34）浸入液体环境（例如12摩尔浓度的盐酸30）中并用由辐射源产生的辐射（例如准直的可见/紫外辐射24）照射（例如200瓦汞柱 氙弧灯20）。 对准直辐射24基本透明的窗口26允许辐射能量到达金属氧化物衬底34.蚀刻掩模32可以位于辐射源20和衬底34之间。金属氧化物衬底34和液体环境30 维持在标称温度（例如25°C）。 在没有照明的情况下，金属氧化物没有被液体环境明显蚀刻。 在照射之后，蚀刻速率显着增加。

公开(公告)号：EP0529998A1

公开(公告)日：1993-03-03

申请号：EP92307730.9

申请日：1992-08-25

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Beratan, Howard R. ,  Dudley, Dana ,  Hanson, Charles M.

IPC: G01J5/34 ,  H01L37/02

CPC classification number: H01L37/02

Abstract: A pyroelectric material (13) which operates as a capacitor and thermally driven voltage or current source and rests over a thermally insulating aerogel (5) is disposed over an integrated circuit (3) having pads or the like on the surface thereof of standard type for making connection to an external electrically conductive element. The aerogel is a highly thermally insulating, extremely low mass material on the surface of the integrated circuit with integrated circuit connection areas thereon. The preferred aerogel is a layer of glass which is from about 90 to about 99.8% porous with interconnecting porosity in the form of a rigid foam. Vias (7) are etched through the thermally insulating layer for electrical interconnection between the detector to be formed and the integrated circuit. Two contacts per pixel in the form of an electrically conductive, infrared frequency reflecting layer (11) are deposited upon the insulating layer, one such contact connected to the integrated circuit through the via and the second such contact connected to a bus or another via shared by several pixels. The pyroelectric detector material, which is sufficiently thin to permit a sufficient amount of the infrared frequency radiations impinging thereon to pass therethrough to the reflecting layer therebelow, is deposited upon and between the electrodes. The detector is preferably a ferroelectric, preferably lead lanthanum zirconate titanate. Finally, a top semi-transparent electrically conductive metal layer (15), preferably of nickel, is deposited upon the pyroelectric material.

Abstract translation: 作为电容器和热驱动的电压源或电流源起作用并放置在绝热气凝胶（5）上的热电材料（13）设置在其标准型表面上具有衬垫等的集成电路（3）上，用于 连接到外部导电元件。 气凝胶是集成电路表面上的高绝热，极低质量的材料，其上集成有电路连接区域。 优选的气凝胶是玻璃层，其为具有约90至约99.8％的多孔，具有刚性泡沫形式的互连多孔性。 通过隔热层蚀刻通孔（7），用于要形成的检测器与集成电路之间的电气互连。 呈导电红外频率反射层（11）形式的每个像素的两个触点被沉积在绝缘层上，一个这样的触点通过通孔连接到集成电路，而第二个触点通过共用连接到总线或另一个通孔 几个像素。 足够薄的热电检测器材料沉积在电极之间并且在电极之间，该材料足以使足以使入射到其上的足够量的红外频率辐射通过其中的反射层。 检测器优选是铁电的，优选锆酸铅镧钛酸铅。 最后，优选镍的顶部半透明导电金属层（15）沉积在热电材料上。

公开(公告)号：EP0827216A3

公开(公告)日：1999-11-24

申请号：EP97115009.9

申请日：1997-08-29

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Beratan, Howard R.

IPC: H01L37/02

CPC classification number: H01L37/02

Abstract: Electrode assembly (36) may comprise a first thin film electrode (52), a dielectric element (50), and a second thin film electrode (54). The first thin film electrode (52) may comprise a solid solution of at least two components. The dielectric element (50) may be in electrical communication with the first thin film electrode (52). The second thin film electrode (54) may be in electrical communication with the dielectric element (50) opposite the first thin film electrode (52).

公开(公告)号：EP0652486B1

公开(公告)日：1999-08-11

申请号：EP94117344.5

申请日：1994-11-03

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Beratan, Howard R. ,  Cho, Chih - Chen ,  Summerfelt, Scott R.

IPC: G03F7/085 ,  H01L21/48 ,  G03F7/004 ,  C08J7/04

CPC classification number: G03F7/085 ,  G03F7/0046

公开(公告)号：EP0721226A3

公开(公告)日：1998-04-08

申请号：EP95309543.7

申请日：1995-12-29

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Belcher, James F. ,  Summerfelt, Scott R. ,  Beratan, Howard R.

IPC: H01L37/02

CPC classification number: H01L37/02 ,  G01J5/34 ,  Y10S438/942

Abstract: An array of thermal sensor elements (16) is formed from a pyroelectric substrate (46) having an infrared absorber and common electrode assembly (18) attached thereto. A first layer of metal contacts (60) is formed to define masked (61) and unmasked (68) regions of the substrate (46). A second layer of metal contacts (62) is formed on the first layer of contacts (60). A radiation etch mask layer (66) is formed to encapsulate the exposed portions of the second layer of contacts (62). A dry-etch mask layer (74) is formed to encapsulate the exposed portions of the first layer of contacts (60) and radiation etch mask layer (66). An initial portion of each unmasked region (68) is etched using a dry-etch process. The remaining portions of the unmasked regions (68) are exposed to an etchant (70) and irradiated with electromagnetic energy to substantially increase the reactivity between the remaining portions and the etchant (70). During such irradiation, the etchant (70) etches the remaining portions substantially faster than the first layer of contacts (60) and the radiation etch mask layer (66).